2SK4014 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( π-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive

Applications

z Low drain −source ON-resistance : R DS (ON) = 1.6 Ω (typ.) z High forward transfer admittance : |Y fs| = 5.0 S (typ.) z Low leakage current : I DSS = 100 µA (max) (VDS = 720 V) z Enhancement mode : V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V DSS 900 V Drain−gate voltage (RGS = 20 kΩ) V DGR 900 V Gate−source voltage V GSS ±30 V DC (Note 1) I D 6 A Drain current Pulse (Note 1) I DP 18 A Drain power dissipation (Tc = 25°C) P D 45 W Single-pulse avalanche energy (Note 2) EAS 972 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 2.78 °C / W Thermal resistance, channel to ambient R th (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 49.5 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 (typ.)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V Drain cutoff current IDSS VDS = 720 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON-resistance R DS (ON) V GS = 10 V, ID = 3 A — 1.6 2.0 Ω Forward transfer admittance |Y fs| V DS = 10 V, ID = 3 A — 5.0 — S Input capacitance Ciss — 1400 — Reverse transfer capacitance C rss — 30 — Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz — 130 — pF Rise time tr — 25 — Turn−on time t on — 75 — Fall time tf — 60 — Switching time Turn−off time t off — 220 — ns Total gate charge (gate−source plus gate−drain) Qg — 45 — Gate−source charge Q gs — 25 — Gate−drain (“Miller”) charge Q gd VDD ≈ 400 V, VGS = 10 V, ID = 6 A — 20 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 6 A Pulse drain reverse current (Note 1) I DRP — — — 18 A Forward voltage (diode) VDSF I DR = 6 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 1100 — ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V dIDR / dt = 100 A / μs — 10 — μC Marking ID = 3 A RL = 133 Ω VDD = 400 V 50 Ω Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K4014 Part No. (or abbreviation code)

DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE ON-RESISTANCE RDS (ON) ( Ω) ID – VDS Common source Tc = 25°C Pulse test 100 5020 30 40 5.5 5.25 5.75 4.5 VGS = 4 V ID – VDS 2 0 104 6 8 Common source Tc = 25°C Pulse test VGS = 4 V 5.25 4.75 4.5 ID – VGS VDS – VGS 04 208 12 16 Common source Tc = 25°C Pulse test ⎪Yfs⎪ − ID 0.1 10 1 Common source VDS = 10 V Pulse test Tc = −55°C 100 0.1 100 RDS (ON) − ID 0.1 1 0.1 Common source Tc = 25°C Pulse test VGS = 10 V 1.5 ID = 6 A 2 0 104 6 8 Tc = −55°C 100 Common source VDS = 10 V Pulse test

DRAIN−SOURCE ON-RESISTANCE RDS (ON) ( Ω) CAPACITANCE C (pF) DRAIN POWER DISSIPATION P D ( W ) DRAIN REVERSE CURRENT I DR ( A ) GATE THRESHOLD VOLTAGE V th (V) DRAIN−SOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) CASE TEMPERATURE Tc (°C) CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Q g (nC) IDR − VDS 0.1 100 −0.40 −1.6−0.8 3 1 VGS = 0 V Common source Tc = 25°C Pulse test −1.2 Vth − Tc −80 0 40 80 120 160−40 Common source VDS = 10 V ID = 1 mA Pulse test C − VDS GATE−SOURCE VOLTAGE V GS ( V ) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 450 300 VDS = 400 V 200 VGS VDS Common source ID = 6 A Tc = 25°C Pulse test 40 60 80 100 20 100 150 5 RDS (ON) − Tc −40 −80 1600 40 80 Common source VGS = 10 V Pulse test 120 ID = 6 A 1.5 PD − Tc 0 80 120 20040 160 10000 1 0.1 100 10 1000 100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C

−15 V 15 V TEST CIRCUIT WAVEFORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 49.5 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS CHANNEL TEMPERATURE (INITIAL) T ch (°C) EAS – Tch AVALANCHE ENERGY E AS (mJ) 1000 800 600 400 200 25 50 75 100 125 150 rth – tw PULSE WIDTH t w ( s ) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) 0.01 10μ 0.1 100μ 1ｍ 10ｍ 100ｍ 1 10 Duty = 0.5 0.2 0.1 SINGLE PULSE 0.05 0.02 0.01 0.001 DRAIN−SOURCE VOLTAGE V DS ( V ) SAFE OPERATING AREA DRAIN CURRENT I D (A) 0.1 100 10 100001000 ID max (PULSE) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 μs * 1 ms * VDSS max 0.01 100 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
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