K3934

2SK3934_09 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3934 Switching Regulator Applications

• Low drain-source ON resistance: R DS (ON) = 0.23 Ω (typ.)
• High forward transfer admittance: |Y fs| = 8.2 S (typ.)
• Low leakage current: I DSS = 100 μA (VDS = 500 V)
• Enhancement model: V th = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) V DGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 15 Drain current Pulse (t = 1 ms) (Note 1) IDP 60 A Drain power dissipation (Tc = 25°C) PD 50 W Single pulse avalanche energy (Note 2) EAS 1.08 J Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) E AR 5.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.5 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 8.16mH, IAR = 15 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) 1: Gate 2: Drain 3: Source

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current IDSS V DS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 7.5 A ⎯ 0.23 0.3 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 7.5 A 2.3 8.2 ⎯ S Input capacitance Ciss ⎯ 3100 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 270 ⎯ pF Rise time tr ⎯ 70 ⎯ Turn-on time ton ⎯ 130 ⎯ Fall time tf ⎯ 70 ⎯ Switching time Turn-off time t off ⎯ 280 ⎯ ns Total gate charge Qg ⎯ 62 ⎯ Gate-source charge Qgs ⎯ 40 ⎯ Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 15 A ⎯ 22 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 15 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 60 A Forward voltage (diode) VDSF I DR = 15 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1.3 ⎯ μs Reverse recovery charge Qrr IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 18 ⎯ μC Marking RL =26Ω 0 V 10 V VGS VDD ∼ − 200 V ID = 7.5 A VOUT 50 Ω Duty ≤ 1%, tw = 10 μs Lot No. Note 4 K3934 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

DRAIN CURRENT I D (A) RDS (ON) – ID DRAIN−SOURCE ON RESISTANCE RDS (ON) ( m Ω) DRAIN−SOURCE VOLTAGE V DS ( V ) ID – VDS DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS (V) ID – VDS DRAIN CURRENT I D (A) GATE−SOURCE VOLTAGE V GS ( V ) ID – VGS DRAIN CURRENT I D (A) 0 2 4 6 8 10 10V GATE−SOURCE VOLTAGE V GS (V) VDS – VGS 0 4 8 12 16 20 DRAIN CURRENT I D (A) ⎪Yfs⎪ – ID FORWARD TRANSIENT ADMITTANCE ⎪Yfs⎪ (S) 1 10 100 100 1000 0.1 100 0.1 100 10 0 2 4 8 COMMON SOURCE Tc = 25°C PULSE TEST 0 8 20 COMMON SOURCE Tc = 25°C PULSE TEST 6.2V 6.6V 16 12 4 VGS = 5V 6.4V 5.8V 5.4V 6V 7.5V 6.5V COMMON SOURCE Tc = 25℃ PULSE TEST ID = 15 A ID = 7.5 A ID = 3.8 A VGS = 10 V COMMON SOURCE Tc = 25°C PULSE TEST Tc = −55°C 100 DRAIN−SOURCE VOLTAGE V DS (V) COMMON SOURCE VDS = 20 V PULSE TEST Tc = 25°C Tc = 100°C Tc = −55°C 6.8V 10V VGS = 5 V COMMON SOURCE VDS = 20 V PULSE TEST

DRAIN−SOURCE VOLTAGE V DS ( V ) C – VDS CAPACITANCE C (pF) 0.1 100 1000 10000 1 10 100 CASE TEMPERATURE Tc (°C) RDS (ON) – Tc DRAIN−SOURCE ON RESISTANCE RDS (ON) ( m Ω) 160 −40 0 40 80 120 −80 1000 800 600 400 200 TOTAL GATE CHARGE Q g ( n C ) DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN−SOURCE VOLTAGE V DS (V) GATE THRESHOLD VOLTAGE Vth (V) CASE TEMPERATURE Tc (°C) Vth – Tc −80 −40 0 40 80 120 160 DRAIN POWER DISSIPATION P D (W) CASE TEMPERATURE Tc (°C) PD – Tc 0 40 80 120 160 DRAIN−SOURCE VOLTAGE V DS ( V ) IDR – VDS DRAIN REVERSE CURRENT I DR (A) 0.1 100 −0.8 −1.2 −1.6−0.4 0 60 80 100 500 400 40 20 COMMON SOURCE VGS = 10 V PULSE TEST ID = 15A 7.5 3.8 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss COMMON SOURCE Tc = 25°C PULSE TEST VGS = 0 V GATE−SOURCE VOLTAGE V GS (V) VDS VGS VDD = 100 V 200V 400V COMMON SOURCE ID = 15 A Tc = 25°C PULSE TEST 12 300 200 100

−15 V 15 V TEST CIRCUIT WAVEFORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 8.13 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS CHANNEL TEMPERATURE (INITIAL) T ch (°C) EAS – Tch AVALANCHE ENERGY E AS ( m J ) 1200 1000 800 600 200 25 50 75 100 125 150 rth – tw PULSE WIDTH t w (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) 0.01 10μ 0.1 100μ 1ｍ 10ｍ 100ｍ 1 10 0.001 DRAIN−SOURCE VOLTAGE V DS ( V ) SAFE OPERATING AREA DRAIN CURRENT I D (A) 0.1 100 10 1000100 0.01 Duty=0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE *SINGLE NONREPETITIVE PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE DC OPERATION Tc = 25°C 1 ms * VDSS max ID max (CONTINUOUS) * ID max (PULSED) * 100 μs * T PDM t Duty = t/T Rth (ch-c) = 2.5°C/W 400

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