K3911

2SK3911 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Cha nnel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications

• Small gate charge: Qg = 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 500 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) V DGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 20 Drain current Pulse (Note 1) I DP 80 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 792 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 0.833 °C/W Thermal resistance, channel to ambient R th (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 1. Gate 2. Drain (heatsink) 3. Source

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS ID = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current IDSS V DS = 600 V, VGS = 0 V ⎯ ⎯ 500 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 10 A ⎯ 0.22 0.32 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 10 A 3.0 11 ⎯ S Input capacitance Ciss ⎯ 4250 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 420 ⎯ pF Rise time tr ⎯ 12 ⎯ Turn-on time ton ⎯ 45 ⎯ Fall time tf ⎯ 12 ⎯ Switching time Turn-off time t off ⎯ 80 ns Total gate charge Qg ⎯ 60 ⎯ Gate-source charge Qgs ⎯ 50 ⎯ Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 20 A ⎯ 10 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 20 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 80 A Forward voltage (diode) VDSF I DR = 20 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1350 ⎯ ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 24 ⎯ μC Marking RL = 20 Ω 0 V 10 V VGS VDD ∼ − 200 V ID = 10 A VOUT 4.7 Ω Duty < = 1%, tw = 10 μs K3911 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

ID – VDS DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) 0 2 104 6 8 5.5 6.5 VGS = 5 V COMMON SOURCE Tc = 25°C Pulse test ID – VDS DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) 40 2081 6 COMMON SOURCE Tc = 25°C PULSE TEST VDS – VGS DRAIN−SOURCE VOLTAGE V DS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) 40 208 12 16 5 10 ID = 20 A COMMON SOURCE Tc = 25°C PULSE TEST 10 8 6.5 7 6 RDS (ON) − ID DRAIN−SOURCE ON RESISTANCE RDS (ON) ( m Ω) DRAIN CURRENT I D (A) 1000 1 100 VGS = 10 V COMMON SOURCE Tc = 25°C PULSE TEST 100 VGS = 5 V 5.5 ID – VGS DRAIN CURRENT I D (A) GATE−SOURCE VOLTAGE V GS ( V ) 2 0 106 8 100 Tc = −55°C COMMON SOURCE VDS = 20 V PULSE TEST ⎪Yfs⎪ − ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN CURRENT I D (A) 0.1 100 0.1 100 10 COMMON SOURCE VDS = 20 V PULSE TEST Tc = −55°C 100

GATE THRESHOLD VOLTAGE V th (V) CASE TEMPERATURE Tc (°C) Vth − Tc COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST −40−80 1600 80 120 40 VGS = 0 V DRAIN−SOURCE VOLTAGE V DS ( V ) IDR − VDS DRAIN REVERSE CURRENT I DR ( A ) COMMON SOURCE Tc = 25°C PULSE TEST 0.1 100 ID = 20 A COMMON SOURCE VGS = 10 V PULSE TEST RDS (ON) – Tc DRAIN−SOURCE ON RESISTANCE RDS (ON) ( m Ω) CASE TEMPERATURE Tc (°C) 1000 200 600 400 800 −80 −40 1600 80 120 40 CAPACITANCE C (pF) DRAIN−SOURCE VOLTAGE V DS (V) C – VDS DRAIN POWER DISSIPATION P D ( W ) CASE TEMPERATURE Tc (°C) PD – Tc 200 120 0 40 120 160 200 160 COMMON SOURCE ID = 20 A Tc = 25°C PULSE TEST 100 200 VDD = 400 V VDS VGS GATE−SOURCE VOLTAGE V GS ( V ) TOTAL GATE CHARGE Q g (nC) DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN−SOURCE VOLTAGE V DS (V) 200 300 500 60 100 80 100 400 20 40 10000 Ciss Coss Crss 1000 100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C PULSE TEST 0.1 1 10 100

−15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 3.46 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS rth – tw PULSE WIDTH t w ( s ) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) 0.01 10μ 0.1 100μ 1ｍ 10ｍ 100ｍ 1 10 0.001 Duty=0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE T PDM t Duty = t/T Rth (ch-c) = 0.833°C/W 200 400 600 1000 800 50 75 100 125 150 SAFE OPERATING AREA DRAIN CURRENT I D (A) CHANNEL TEMPERATURE (INITIAL) T ch (°C) EAS – Tch AVALANCHE ENERGY E AS (mJ) DRAIN−SOURCE VOLTAGE V DS (V) 0.1 100 1000 10 1000 DC OPERATION Tc=25℃ 100 μs * 1 ms * ID max (PULSE) * VDSS max ID max (CONTINUOUS) 100 0.01 *: SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.