2SK389 TOSHIBA | Alldatasheet
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TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. Unit in mm © 1 Chip Dual Type. asz03 Recommended for First Differential Stages of DC Amplifiers. — fa a © = Very High |Y¢| : [¥f|=20mS (Typ.) oso STMT (Vpg=10V, Vgg=0, f=1kHz, Ipgg=3mA) ous’ 9 18 \\ i 22 a p-ss=0 \\ 42) 3 © Good Pair Characteristics l 0.457010 © High Breakdown Voltage : V@pg=—50V (Min.) Hazsoz0 a8 i @ Very Low Noise : NF=0.5dB (Typ.) g Fi (Vpg=10V, Ip=1mA, Rg=1k0, f=1kHz) ett yas © High Input Impedance: Iggg=—1.0nA (Max.) (Vgg= —30V) veseeey 1. DRAIN 1 5. SOURCE 2 @ Complementary to 2SJ109 2 GATE 1 & GATE2 3. SOURCE 1 7. DRAIN 2 4. SUBSTRATE (Note 2) MAXIMUM RATINGS (Ta = 25°C) JEDEC = CHARACTERISTIC SYMBOL | RATING | UNIT TOSHIBA —_2-10M1A Gate-Drain Voltage Vaps Weight : 0.37g (Typ.) Gate Current [ic | 10 | ma | Drain Power Dissipation [ep [200 | mw | Storage Temperature Range —55~125 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION fof any Infringements of intellectual property-Or other rignts GF tne thita parties Which may result rom Ite use. ‘NO Teense’'s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-04-10 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xaw. | rye. max. unr] Gate Cut-off Current Igss Vas=-30V, Vps=0 | — | — |-10] na | Gate-Drain Breakdown = vonas| sisnier-twa [al =[-[ Ipgs ote 1)| Vng=10V, Ves=0 | 26 — [20 | ma | mets [racine [ol [|| (small) (large) Gate-Source Cut-off Voltage | VGS(OFF Vps=10V, Ip=0.1nA [-o.15| — |-20] v | Forward Transfer Yel Vps=10V, Vgg=0 20 Admittance fal f=1kHz, Ipgg=3mA Forward Transfer lYesl/I¥esl_ | Vpg=10V, Veg=0, Admittance Ratio (mall) (argo) | f=1kHz Differential Gate-Source _ _ eee pence semen [- [=| = fw . Vps=10V, Vgs=0, memos [ew VO® [= [= | [oe Reverse Transfer Vep= -10V, Ip=0, Capacitance Crss f=1MHz 55 pF Vpg=10V, Rg=1k0 , , NF (1) Ip=1mA, f=10Hz 15 10 Noise Figure Vv; 10V, Rq=1k0 DS=10V, Rg= Note 1 : Ipgg Classification GR:2.6~6.5mA, BL:6~12mA, V:10~20mA Note 2 : Use the substrate lead with open. 1997-04-10 2/5
STATIC CHARACTERISTICS 16 Ip - Vps (LOW VOLTAGE REGION) FH oornsos source common source] | |_| H+: of an Pa ead Lf [vog-ov Coe F Cee es | Demo Pee 8 Cee vege CEE err [Ere yo 2 JA) coo pce eT Ho Ayes Pe 3 z : Via Vf -9e 05 04 z Se Vps=10y Hie LAT on AAS Pos P4ERRe 22s | A -06 -04 -02 0 10 20 30 40 0 2 4 6 8 10 GATE-SOURCE DRAIN-SOURCE VOLTAGE DRAIN-SOURCE VOLTAGE Vpg (V) VOLTAGE Vgs (V) Vps (Vv) Ip — Vas l¥ts| — ID 16 40F common source | | | | | s LLITTITIT It I PT TPP yyy. 2 et |||} yy lA s 8 Ati tt eA oe a RB ge f. ae) ae ee "4 X < Vps=10V. fa=25°C |i | | Lee, F TTT | -16 -12 -0.8 -04 0 ry 4 8 12 16 GATE-SOURCE VOLTAGE Vgs (V) DRAIN CURRENT Ip (mA)
50 I¥tsl — Iss 4 Vas (orr) ~ Ipss
. Fee — e cpu T |g ERE : Til | | 8, fect 29 7 COMMON SOURCE Ea = COMMON SOURCE Pa Ips: Vog=10V BE og | Ipss__—: Vps=10V So} ——}— + Wal: Vg=10v 5° Vosiorr) : Vps=10V a re ee Vgs=0 B = 5 H—+—H falkis g Ip=0.1pA, Bf ere ° menase 1 3 10 30 ~O1t 3 10 30 DRAIN CURRENT Ipgg (mA) DRAIN CURRENT Ipgg (mA) 1997-04-10 3/5
+0 Crss — VGD 00 Ciss - Vps ee 8 sd itt} 1 1-1 conmon source — LUTTE TTT Teosmton source i EE TT ae 5 ALM | aes Bo | | metre eo LL | Le Se er ee 6 Fa tame Sg ERE 8g Sh ge Aaa eee zZ 60 2 eee &g gti Tri ry = | a = of th
26 LITT TTT Try ss CO Cees
- [iM Ti TT é oni s | pos SE CI TU 3 GATE-DRAIN VOLTAGE Ven (W) =... ——=== ee St —— See Igsx - Vps ee | 100n, | 0.3 1 3 10 30 «50 50n] COMMON SOURCE ip= 10m DRAIN-SOURCE VOLTAGE Vps (V) | Ta= A 30n| Ta=26° oN | bet wie) hae = aoe =" é g vos| PAG 3 vps=10¥ . eee FZ | Be N fot Zz oo a i ‘ = 300; e/a | eS N ee a 55 NY @ wl LK ELIT ni (da Ac a an 5S 14] i a sa A ST 0p] a 7 A P| ~ Fag a e/a 3 eee SS Se g 0 ——_ | 1.01 8 12 16 20 24 28 32 O1 0.3 1 3 10 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN CURRENT Ip (mA) NF - Ip NF - Vos 6 8) TTT Jones COL enorme - SERRE . 4 Rg=1k2 = aaa merase ne e -eE tT TTT TT Ty
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$ Ss +34 g g a po | a a a a | == 0 2 4 6 8 10 0 10 20 30 40 50 DRAIN CURRENT Ip (mA) DRAIN-SOURCE VOLTAGE Vpg (V) 1997-04-10 4/5
Jeounow sovece M1 TMM 11M (TTT TTT J costo source _ _f¥os=10v I TUTTI TT gf LUTE IIT | vos-s0v g (o-tma a 8 LUTTE TUTE |io-1ms ps oor 1 & NUIT TAT [ese ee s ENUM
3 Nhl TH 3 HN wenn Tt
es LN UIT TTI TTT = Lal forte TTT TTT g Ni v, ~ . gfe NT CT CTI TT g “Lit WN TIT TAT ESSN TTT Tet FST ET LUST ot TP SST 100 1k 10k 100k 1M 10 100 1k 10k 100k SIGNAL SOURCE RESISTANCE Rg (0) FREQUENCY f (H,) 1997-04-10 5/5