K3878

K3878 THINKISEMI | Alldatasheet

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Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 900 V Drain-gate voltage (R GS = 20 kΩ) V DGR 900 V Gate-source voltage V GSS ±30 V DC (Note 1) I D Drain current Pulse (Note 1) I DP A Drain power dissipation (Tc = 25°C) P D 150 W Single pulse avalanche energy (Note 2) E AS 778 mJ Avalanche current I AR 9 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 0.833 °C/W Thermal resistance, channel to ambient R th (ch-a) 50 °C/W Thermal Characteristics D G S

http://www.thinkisemi.com.tw/ Page 2/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd.

Electrical Characteristics

(Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±30 V, V DS = 0 V ⎯ ⎯ ± 10 μA Gate-source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 ⎯ ⎯ V Drain cutoff current I DSS V DS = 720 V, V GS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 900 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance R DS (ON) V GS = 10 V, I D = 4 A ⎯ 1.0 1.3 Ω Forward transfer admittance ⎪Y fs ⎪ V DS = 15 V, I D = 4 A 3.5 7.0 ⎯ S Input capacitance C iss ⎯ 2200 ⎯ Reverse transfer capacitance C rss ⎯ 45 ⎯ Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz 190 pF Rise time t r Turn-on time t on Fall time t f Switching time Turn-off time t off ⎯ 120 ns Total gate charge (gate-source plus gate-drain) Q g ⎯ 60 ⎯ Gate-source charge Q gs ⎯ 34 ⎯ Gate-drain (“Miller”) charge Q gd V DD ≈ 400 V, V GS = 10 V, I D = 9 A ⎯ 26 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR ⎯ ⎯ ⎯ 9 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 27 A Forward voltage (diode) V DSF I DR = 9 A, V GS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time t rr ⎯ 1.4 ⎯ μs Reverse recovery charge Q rr I DR = 9 A, V GS = 0 V, dI DR /dt = 100 A/μs ⎯ 16 ⎯ μC Duty ≤ 1%, t w = 10 μs 0 V 10 VV GS R L = 100 Ω V DD ≈ 400 V I D = 4 A V OUT 4.7 Ω Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: V DD = 90 V, T ch G = 25 Ω, I AR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. K3878

http://www.thinkisemi.com.tw/ Page 3/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. FORWARD TRANSFER ADMITTANCE fs ⎪ (S) DRAIN−SOURCE VOLTAGE V DS ( V ) I D – V DS DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) I D – V DS DRAIN CURRENT I D (A) GATE−SOURCE VOLTAGE V GS ( V ) I D – V GS DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) fs ⎪ − I D DRAIN CURRENT I D (A) R DS (ON) − I D DRAIN−SOURCE ON-RESISTANCE R DS (ON) ( Ω) 2 0 104 6 8 COMMON SOURCE Tc = 25°C PULSE TEST VGS = 4.5 V 5.25 4.75 1 10 0.1 COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10 V 100 40 208 12 16 COMMON SOURCE VDS = 20 V PULSE TEST 2 0 104 6 8 Tc = −55°C 100 0.1 100 10 Tc = −55°C 100 100 5.5 5.5 VGS = 4.5 V COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST DRAIN−SOURCE VOLTAGE V DS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) V DS – V GS 04 208 12 16 2.3 COMMON SOURCE Tc = 25°C PULSE TEST 4.5 ID = 9 A K3878

http://www.thinkisemi.com.tw/ Page 4/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. CASE TEMPERATURE Tc (°C) GATE THRESHOLD VOLTAGE V th (V) DRAIN−SOURCE VOLTAGE V DS ( V ) I DR − V DS DRAIN REVERSE CURRENT I DR ( A ) DRAIN−SOURCE VOLTAGE V DS ( V ) C − V DS CAPACITANCE C (pF) V th − Tc 0.1 100 VGS = 0 V COMMON SOURCE Tc = 25°C PULSE TEST −80 0 40 80 120 160−40 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 10000 1 0.1 100 10 1000 100 GATE−SOURCE VOLTAGE V GS ( V ) DYNAMIC INPUT/OUTPUT CHARACTERISTICS TOTAL GATE CHARGE Q g (nC) DRAIN−SOURCE VOLTAGE V DS ( V ) 500 100 300 400 VDD = 400 V 100 VGS VDS COMMON SOURCE ID = 9 A Tc = 25°C PULSE TEST 40 60 80 100 20 200 200 8 Ciss Coss Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C DRAIN POWER DISSIPATION P D ( W ) CASE TEMPERATURE Tc (°C) P D − Tc 200 120 160 0 80 120 20040 160 CASE TEMPERATURE Tc (°C) R DS (ON) − Tc DRAIN−SOURCE ON-RESISTANCE R DS (ON) ( Ω) −40 −80 1600 40 80 COMMON SOURCE VGS = 10 V PULSE TEST 4.5 120 ID = 9 A K3878

http://www.thinkisemi.com.tw/ Page 5/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. 10 μ 100 μ 1 m 10 m 100 m 1 10 0.001 0.01 0.1 T PDM t Duty = t/T Rth (ch-c) = 0.833°C/W SINGLE PULSE Duty = 0.5 0.2 0.1 0.05 0.02 0.01 r th − t w PULSE WIDTH t w ( s ) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t) th (ch-c) −15 V 15 V TEST CIRCUIT WAVEFORM I AR B VDSS V DD V DS R G = 25 Ω V DD = 90 V, L = 17.6 mH −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS SAFE OPERATING AREA DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN CURRENT I D (A) 100 10 100 10000 VDSS max 0.1 DC OPERATION Tc = 25°C 1 ms * ID max (CONTINUOUS) ID max (PULSE) * 0.01 100 μ s * 1000 E AS – T ch CHANNEL TEMPERATURE (INITIAL) T ch (°C) AVALANCHE ENERGY E AS (mJ) 200 400 600 1000 800 50 75 100 125 150 * SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature. K3878

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 6/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K3878