2SK3868 TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( p -MOSVI) 2SK3868 Switching Regulator Applications
- Low drain-source ON resistance: RDS (ON) = 1.3¶ (typ.)
- High forward transfer admittance: |Yfs| = 3S (typ.)
- Low leakage current: IDSS = 100 ÊA (VDS = 500 V)
- Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ ) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current Pulse (t = 1 ms) (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 180 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch -c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch -a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1: Gate 2: Drain 3: Source JEDEC ? JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.)
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 V Drain cut-off current IDSS VDS = 500 V, VGS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A 1.3 1.7 Ω Forward transfer admittance Yfs VDS = 10 V, ID = 2.5 A 1.5 3.0 S Input capacitance Ciss 550 Reverse transfer capacitance Crss 7 Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 70 pF Rise time tr 10 Turn-on time ton 20 Fall time tf 10 Switching time Turn-off time toff 50 ns Total gate charge Qg 16 Gate-source charge Qgs 10 Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A 6 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 5 A Pulse drain reverse current (Note 1) IDRP 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V − 1.7 V Reverse recovery time trr 150 ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/µs 0.3 µC Marking RL = 90 Ω 0 V 10 V VGS VDD ∼ − 225 V ID = 2.5 A VOUT 15 Ω Duty < = 1%, tw = 10 µs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3868 Part No. (or abbreviation code)
Tc = − 55°C 100 ID = 5 A 1.2 2.5 4 0 2 4 6 10 VGS = 4 V 4.5 4.75 5.25 5.5 DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT I D (A) COMMON SOURCE Tc = 25°C PULSE TEST GATE-SOURCE VOLTAGE VGS (V) ID – VGS DRAIN CURRENT I D (A) COMMON SOURCE VDS = 20 V PULSE TEST DRAIN-SOURCE VOLTAGE VDS ( V) GATE-SOURCE VOLTAGE VGS (V) VDS – VGS COMMON SOURCE Tc = 25 PULSE TEST 4.5 5.5 DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT I D (A) COMMON SOURCE Tc = 25°C PULSE TEST VGS = 4 V 0.1 0.1 Tc = − 55°C Yfs – ID COMMON SOURCE VDS = 20 V PULSE TEST FORWARD TRANSFER ADMITTANCE Yfs (S) 100 DRAIN CURRENT ID (A) 0.1 0.01 0.1 VGS = 10 V¤15V DRAIN CURRENT ID (A) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω ) COMMON SOURCE Tc = 25°C PULSE TEST 8 12 4.75 5.25
0.1 100 1000 10000 1 3 5 10 30 100 Ciss Coss Crss DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE C (pF) COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 0.1 − 0.8 0.3 0.5 − 1.2 − 2.0 − 1.6 VGS = 0, − 1,1 V − 0.4 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE Tc = 25°C PULSE TEST − 80 − 40 0 40 80 120 160 GATE THRESHOLD VOLTAGE Vth (V) CASE TEMPERATURE Tc ( °C) Vth – Tc COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 160 40 80 120 0 ID = 5A 1.2 2.5 CASE TEMPERATURE Tc ( °C) RDS (ON) – Tc DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω ) COMMON SOURCE VGS = 10 V PULSE TEST DRAIN POWER DISSIPATION PD (W) CASE TEMPERATURE Tc ( °C) 0 40 80 120 160 200 DRAIN-SOURCE VOLTAGE VDS (V) 0 5 10 VDD = 100 V VDS VGS 400 200 15 25 500 200 100 300 400 GATE-SOURCE VOLTAGE VGS (V) TOTAL GATE CHARGE Qg (nC) DYNAMIC INPUT / OUTPUT CHARACTERISTICS COMMON SOURCE ID = 5 A Tc = 25°C PULSE TEST IDR – VDS CAPACITANCE – VDS PD – Tc
CHANNEL TEMPERATURE (INITIAL) Tch ( °C) EAS – Tch AVALANCHE ENERGY EAS (mJ) 0.01 10Ê 0.1 Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 rth – tw PULSE WIDTH t w (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t) /Rth (ch -c) T PDM t Duty = t/T Rth (ch-c) = 3.57°C/W SINGLE PULSE − 15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 12.2mH ⋅⋅⋅= VDDBVDSS BVDSS2IL ? AS 0.1 100 10 1000 100 0.01 DRAIN-SOURCE VOLTAGE VDS (V) SAFE OPERATING AREA ¦ SINGLE NONREPETITIVE PULSE Tc=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 µs * 1 ms * VDSS max DRAIN CURRENT I D (A)
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