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Technical content

Features

  • ON-resistance R DS(on)1=20mΩ(typ.)
  • Input capacitance Ciss=1780pF(typ.)
  • 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D 40 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 160 A Allowable Power Dissipation P D 1.65 W Tc=25°C5 0 W Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001 Ordering & Package Information Marking Electrical Connection Device Package Shipping memo 2SK3816-1E TO-262-3L (TO-262) 50pcs./tube Pb Free 2SK3816-DL-1E TO-263-2L (SC-83, TO-263) 800pcs./reel Packing Type : DL 1 : Gate 2 : Drain 3 : Source TO-262-3L 10.0 5.3 1.27 1.47 0.8 2.542.54 13.08 9.2 7.9 1.22.4 1.750.9 3.0 4.5 8.0 1.3 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.750.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 12 3 2SK3816-1E 2SK3816-DL-1E DL K3816 LOT No. 2, 4

No.8054-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 60 mJ Avalanche Current *2 I AV 40 A Note : *1 VDD=20V , L=50μH, IAV=40A (Fig.1) *2 L≤50μH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current I DSS V DS=60V, VGS=0V 1 μA Gate to Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=20A 16 27 S Static Drain to Source On-State Resistance RDS(on)1 I D=20A, VGS=10V 20 26 mΩ RDS(on)2 I D=20A, VGS=4V 28 40 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 1780 pF Output Capacitance Coss 266 pF Reverse Transfer Capacitance Crss 197 pF Turn-ON Delay Time td(on) See Fig.2 16.5 ns Rise Time tr 160 ns Turn-OFF Delay Time td(off) 160 ns Fall Time tf 160 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=40A 40 nC Gate to Source Charge Qgs 6.5 nC Gate to Drain “Miller” Charge Qgd 11.5 nC Diode Forward Voltage VSD IS=40A, VGS=0V 1.05 1.5 V Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DUT 50Ω10V 0V VDD L 2SK3816 ≥50Ω RG G S D PW=10μs D.C.≤1% P.G 50Ω G S D ID=20A RL=1.5Ω VDD=30V VOUT 2SK3816 VIN 10V VIN

No.8054-3/7 IT07814 IT07815 IT07812 IT07813 --50 --25 150 03 0 10 15 20 255 100 1000 IT07819 IT07817IT07816 0.1 1.023 5 7 1.0 102 3 57 2 3 57 345678921 0 0 25 50 75 100 125 VGS=3V 10V Tc=25°C ID=20A Tc=75°C 25°C --25°C ID=20A, V GS=4V ID=20A, V GS=10V Tc= --25 75°C 25°C VDS=10V Coss Ciss Crss IT07818 0.1 23 1.05 7 23 5 7 23 5 10 100 td(off) tf td(on) tr VDD=30V VGS=10V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc | yfs | -- ID IF -- VSD Ciss, Coss, Crss -- VDSSW Time -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain to Source On-State Resistance, RDS(on) -- mΩ Gate to Source V oltage, VGS -- V Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Switching Time, SW Time -- ns --25 Tc= --25 Tc=75 VDS=10V 0.01 0.1 1.0 100

2 Tc=75

--25 VGS=0V f=1MHz

No.8054-4/7 IT07811 IT17035 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 0.01 0.1 1.0 100 23 5 723 5 723 5 7 1.00.1 10 100 IDP=160A(PW≤10μs) ID=40A 100μs 1ms 10ms 100ms DC operation 10μs Operation in this area is limited by RDS(on).IT07820 0 5 10 20 15 25 30 40 35 VDS=30V ID=40A IT07822 20 40 60 80 100 120 140 160 A S O PD -- Ta PD -- Tc VGS -- Qg Gate to Source V oltage, VGS -- V Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W Drain Current, ID -- A Tc=25°C Single pulse Total Gate Charge, Qg -- nC Drain to Source V oltage, V DS -- V

No.8054-5/7 Outline Drawing Land Pattern Example 2SK3816-DL-1E Mass (g) Unit 1.5 * For reference mm Unit: mm

No.8054-6/7 Outline Drawing 2SK3816-1E Mass (g) Unit 1.6 * For reference mm

PS No.8054-7/7 Note on usage : Since the 2SK3816 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.