2SK3757 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications

  • Low drain-source ON resistance: R DS (ON) = 1.9 Ω (typ.)
  • High forward transfer admittance: |Yfs| = 1.0 S (typ.)
  • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
  • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) V DGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 2 Drain current Pulse (Note 1) I DP 5 A Drain power dissipation (Tc = 25°C) P D 30 W Single pulse avalanche energy (Note 2) EAR 103 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) E AR 3 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 4.17 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. Unit: mm JEDEC − JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) 1: Gate 2: Drain 3: Source

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate -source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current IDSS V DS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 1 A ⎯ 1.9 2.45 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 1 A 0.28 1.0 ⎯ S Input capacitance Ciss ⎯ 330 ⎯ Reverse transfer capacitance Crss ⎯ 4 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 45 ⎯ pF Rise time tr ⎯ 15 ⎯ Turn-on time ton ⎯ 25 ⎯ Fall time tf ⎯ 20 ⎯ Switching time Turn-off time t off ⎯ 80 ⎯ ns Total gate charge Qg ⎯ 9 ⎯ Gate-source charge Qgs ⎯ 5 ⎯ Gate-drain charge Qgd VDD ∼ − 360 V, VGS = 10 V, ID = 2 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR ⎯ ⎯ ⎯ 2 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 5 A Forward voltage (diode) VDSF I DR = 2 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr ⎯ 1000 ⎯ ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 5.0 ⎯ μC Marking Duty < = 1%, tw = 10 μs 0 V

10 VVGS

RL = 200 Ω VDD ∼ − 200 V ID = 1 A VOUT 50 Ω Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3757 Part No. (or abbreviation code)

0.1 1.0 10.0 0.1 1 10 TＣ = -55℃ COMMON SOURCE VＤＳ = 20V PULSE TEST 100 0 4 8 12 16 20 IＤ = 2.0A 1.0 COMMON SOURCE TＣ = 25℃ PULSE TEST 0.5 02468 1 0 TＣ = -55℃ COMMON SOURCE VＤＳ = 20V PULSE TEST 100 0 1 02 03 04 05 0 VＧＳ = 5.0V 5.5 COMMON SOURCE TＣ = 25℃ PULSE TEST 6.0 6.5 6.75 7.0 7.25 8.0 0.4 0.8 1.2 1.6 02468 1 0 VＧＳ = 4.5V 5.0 COMMON SOURCE TＣ = 25℃ PULSE TEST 5.25 5.5 5.75 6.0 8.0 ID – VDS ID – VDS ID – VGS VDS – VGS RDS (ON) – ID ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN−SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A) GATE−SOURCE VOLTAGE V GS ( V ) DRAIN CURRENT I D (A) GATE−SOURCE VOLTAGE V GS ( V ) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN−SOURCE VOLTAGE V DS (V) 0.1 1 0.3 0.5 3 5 0.5 COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10, 15 V

0.1 1 10 100 Ciss Crss Coss COMMON SOURCE VＧＳ = 0V f = 1MHz Tc = 25℃ RDS (ON) – Tc IDR – VDS Vth – Tc PD – Tc DRAIN POWER DISSIPATION P D (W) GATE THRESHOLD VOLTAGE V th (V) CASE TEMPERATURE Tc (°C) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN−SOURCE VOLTAGE V DS (V) DRAIN REVERSE CURRENT I DR (A) DRAIN−SOURCE VOLTAGE V DS (V) CAPACITANCE – VDS CAPACITANCE C (pF) CASE TEMPERATURE Tc (°C) CASE TEMPERATURE Tc (°C) GATE−SOURCE VOLTAGE V GS ( V ) TOTAL GATE CHARGE Q g (nC) DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN−SOURCE VOLTAGE V DS (V) −40 −80 1600 40 80 COMMON SOURCE VGS = 10 V PULSE TEST ID = 2 A 0.5 1.0 120 0.01 0.03 0.3 0.1

1 VGS = 0, −1 V

Tc = 25°C PULSE TEST −80 0 40 80 120 160−40 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 0 80 120 20040 160 500 100 300 200 400 VDS = 360 V 180 VGS VDS COMMON SOURCE ID = 2 A Tc = 25°C PULSE TEST 4 6 8 10 12 14 2

rth – tw −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 42.8 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS DRAIN CURRENT I D (A) CHANNEL TEMPERATURE (INITIAL) T ch (°C) AVALANCHE ENERGY E AS (mJ) PULSE WIDTH t w (S) NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) DRAIN−SOURCE VOLTAGE V DS (V) SAFE OPERATING AREA EAS – Tch 0.01 0.1 0.3 0.03 10 μ 100 μ 1 m 10 m 100 m 1 10 T PDM t Duty = t/T Rth (ch-c) = 4.17°C/W Duty = 0.5 0.2 0.1 SINGLE PULSE 0.05 0.01 0.003 0.02 0.03 0.3 10 100 1000 VDSS max 0.01 0.1 * SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature DC OPERATION Tc = 25°C 1 ms * 100 μs * ID max (CONTINUOUS) ID max (PULSE) * 120 200 160 50 75 100 125 150

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.