2SK373 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS 5.1 MAX. e High Breakdown Voltage : V@pg=-—100V (Min.) 0.45 s © High Input Impedance: Iggg=—1.0nA (Max.) (Vgg=—80V) ossmax. {) ae 0.45 | a 5 000 7 1.27 127 2 a 3 f MAXIMUM RATINGS (Ta = 25°C) EH) i CHARACTERISTIC SYMBOL Gate-Drain Voltage Veps | -100 | v | Gate Current Ig [ 10 | mA 2. GATE Junction Temperature JEDEC TO-92 TOSHIBA 2-5F1C Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | san. | rye. [acax. [unr] Gate-Drain Breakdown Voltage YR) GDS} VDS=0. Io= ~ 100A |-1o| — | - | v | i Ipss = = Drain Current (Netz) | YDS=10V, Vas=0 6.5 | mA Gate-Source Cut-off Voltage | VGs(OFF)| VpS=10V, Ip=0.1unA [| -o4] — |[-35] v | Forward Transfer Pre Vps=10V, Vas=0, f= 1kHe | ts| 4s] — | ns | Input Capacitance | Ciss__|_Vps=10V, Ves=0, f=imne | — | ia[ — | or | Reverse Transfer Vne=10V, Ip=0, f= 1MHs [=| 2[-| «co Fi Vps=10V, Vas=0, Noise Figure NF RG=100k0, f= 100Hz 0.5 261001 a2 malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice 1997-04-10 1/3

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