K3659

2SK3659 NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2002 MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET Document No. D16251EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP (K) Printed in Japan DATA SHEET

DESCRIPTION

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5V drive available.
• Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
• Built-in gate protection diode.
• Avalanche capability ratings.
• Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) V DSS 20 V Gate to source voltage (VDS = 0 V) V GSS ±20 V Drain current (DC) (TC = 25°C) I D(DC) ±65 A Drain current (pulse) Note1 ID(pulse) ±260 A Total power dissipation (TA = 25°C) P T1 2.0 W Total power dissipation (TC = 25°C) P T2 25 W Channel temperature T ch 150 °C Storage temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS 35 A Single Avalanche Energy Note2 EAS 122 mJ Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current I DSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 40 A 15 S RDS(on)1 VGS = 10 V, ID = 40 A 4.6 5.7 m ΩDrain to Source On-state Resistance RDS(on)2 VGS = 4.5 V, ID = 40 A 7.1 9.9 m Ω Input Capacitance C iss VDS = 10 V 1700 pF Output Capacitance C oss VGS = 0 V 700 pF Reverse Transfer Capacitance C rss f = 1 MHz 250 pF Turn-on Delay Time t d(on) VDD = 10 V, ID = 40 A 16 ns Rise Time t r VGS = 10 V 14 ns Turn-off Delay Time t d(off) RG = 10 Ω 50 ns Fall Time t f 12 ns Total Gate Charge Q G VDD = 16 V 32 nC Gate to Source Charge Q GS VGS = 10 V 6.0 nC Gate to Drain Charge Q GD ID = 65 A 8.3 nC Body Diode Forward Voltage V F(S-D) IF = 65 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 65 A, VGS = 0 V 45 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs3 4 n C TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet D16251EJ2V0DS 3 2SK3659 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 TC - Case Temperature - °CT C - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.1 100 1000 0.1 1 10 100 ID(DC) RDS(on) Limited PW = 100 µs 1 ms 10 ms 100 ms ID(pulse) DC Power Dissipation Limited TC = 25°C Single Pulse VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Single Pulse Rth(ch-A) = 62.5°C/W Rth(ch-C) = 5°C/W PW - Pulse Width - s 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 150 200 250 300 0 0.5 1 1.5 2 Pulsed VGS = 10 V 4.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.01 0.1 100 1000 123456 Pulsed VDS = 10 V Tch = 150°C 75°C 25°C −55°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) – Gate Cut-off Voltage - V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 VDS = 10 V ID = 1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S0.1 100 0.01 0.1 1 10 100 Pulsed VDS = 10 V Tch = 150°C 75°C 25°C −55°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.1 1 10 100 1000 Pulsed VGS = 4.5 V 10 V 0 5 10 15 20 Pulsed ID = 40 A RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V

Data Sheet D16251EJ2V0DS 5 2SK3659 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE -50 0 50 100 150 ID = 40 A Pulsed VGS = 4.5 V 10 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 0.01 0.1 1 10 100 VGS = 10 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 td(on) tr td(off) tf VDD = 10 V VGS = 10 V RG = 10 Ω ID - Drain Current - A VDS - Drain to Source Voltage - V 0 5 10 15 20 25 30 35 ID = 65 A VDS VDD = 16 V 10 V VGS QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT ISD - Diode Forward Current - A 0.01 0.1 100 1000 00 . 511 . 5 Pulsed VGS = 10 V 0 V trr - Reverse Recovery Time - ns 100 1000 0.1 1 10 100 VGS = 0 V di/dt = 100 A/µs VSD - Source to Drain Voltage - V I D - Drain Current - A

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A 0.1 100 0.01 0.1 1 10 VDD = 10 V RG = 25 Ω VGS = 20 → 0 V Starting T ch = 25 °C IAS = 35 A EAS = 122 mJ Energy Derating Factor - % 100 25 50 75 100 125 150 VDD = 10 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 35 A L - Inductive Load - mH Starting T ch - Starting Channel Temperature - °C

Data Sheet D16251EJ2V0DS 7 2SK3659 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 2.5±0.1 0.65±0.11.5±0.2 2.54 TYP. 1.3±0.2 2.54 TYP. 0.7±0.1 4±0.2 15.0±0.3 12.0±0.2 3±0.1 123 1.Gate 2.Drain 3.Source 13.5 MIN. φ EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

M8E 00. 4 The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).