K3572 VBSEMI | Alldatasheet

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N-Channel 20-V (D-S) MOSFET V(BR)DSS (V) rDS(on) () ID (A)a 0.004@ VGS = 4.5 V 100 0.005@ VGS = 2.5 V 95 D G S N-Channel MOSFET TO-220AB Top View GDS Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain Current (TJ = 175C) TC = 25C ID A Continuous Drain Current (TJ = 175C) TC = 100C ID A Pulsed Drain Current IDM 260 A Avalanche Current IAR 35 Repetitive Avalanche Energyb L = 0.1 mH EAR 45 mJ Power Dissipation TC = 25C PD 125a W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263)c R thJA C/W Junction-to-Am bient Free Air (TO-220AB) R thJA

62.5 C/W

Junction-to-Case R thJC 1.25 Notes: a. See SOA curve for voltage derating. b. Duty cycle 1%. c. When mounted on 1” square PCB (FR-4 material). /C0068/C0067 /C0067/C0067 /C0072 /C0068 /C0072 /C0067

FEATURES

  • TrenchFET ® Power MOSFET  1 00 % Rg and UIS Tested  Complia nt to RoHS Directive 2011/65/EU

APPLICATIONS

 O R-ing  Ser ver D C / D C 100 K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 /C0109A 20 V Gate Threshold Voltage VGS(th) VDS = VGS , IDS = 250 /C0109A 0.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 12 V 100 nA ZGV l D i C I VDS = 20 V, VGS = 0 V 1 AZero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 125C 50 /C0109A VDS = 20 V, VGS = 0 V, TJ = 175C 150 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 120 A DiS OS R i a VGS = 4.5 V, ID = 30 A 0.004 Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 30 A, TJ = 125C 0.007 Drain-Source On -State Resistancea rDS(on) VGS = 4.5 V, ID = 30 A, TJ = 175C 0.010 VGS = 2.5 V, ID = 20 A 0.005 Forward Transconductancea gfs VDS = 5 V, ID = 30 A 20 S Input Capacitance C iss V 0 V V 20 V f 1 MH 6000 FOutput Capacitance C oss VGS = 0 V, VDS = 20 V, f = 1 MHz 1100 pF Reversen Transfer Capacitance C rss 600 Total Gate Chargec Q g V1 0 V V 4

5 V I 8 5 A

CGate-Source Chargec Q gs VDS = 10 V, VGS = 4.5 V, ID = 85 A 13 nC Gate-Drain Chargec Q gd 14 Turn-On Delay Timec td(on) 25 40 Rise Timec tr VDD = 10 V, RL = 0.12 120 180 ns Turn-Off Delay Timec td(off) DD , L ID /C0093 85 A, VGEN = 4.5 V, RG = 2.5 80 120 ns Fall Timec tf 100 150 Pulsed Current ISM 240 A Forward Voltagea VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Reverse Recovery Time trr IF = 50 A, di/dt = 100 A//C0109s 45 100 ns Notes: a. Pulse test; pulse width /C0118300 /C0109s, duty cycle /C01182%. b. Guaranteed by design, not subject to production testing. Independent of operating temperature. /C0070/C0069 /C0069/C0067/C0073/C0070/C0073/C0067/C0073 /C0074 /C0067 /C0069 /C0072/C0069/C0073/C0069/C0069/C0068 Static Dynamic b Source-Drain Diode Ratings and Characteristics (TC = 25C)b 1.5 K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

0.002 0.004 0.006 0.008 0.010 0 2 04 06 08 0 1 0 0 100 120 0 0.5 1.0 1.5 2.0 2.5 3.0 100 150 200 250 02468 1 0 Output Characteristics Transfer Characteristics Capacitance Gate Charge Transconductance On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) – Drain Current (A)ID– Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) V GS – Transconductance (S)g fs 25C –55C TC = 125C VDS = 10 V ID = 50 A VGS = 2.5 V C rss TC = –55C 25C 125C VGS = 4.5 V – On-Resistance (rDS(on) ) – Drain Current (A)ID ID – Drain Current (A) 2000 4000 6000 8000 10000 0 4 8 12 16 C iss C oss VGS = 4.5, 4 V 3.5 V 3 V 2.5 V 2 V

1.5 V1 V

/C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

0.4 0.8 1.2 1.6 2.0 –50 –25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V) – Source Current (A)IS 100 VGS = 4.5 V ID = 30 A TJ = 25CTJ = 150C (Normalized) – On-Resistance (rDS(on) ) 100 0 25 50 75 100 125 150 175 Safe Operating Area VDS – Drain-to-Source Voltage (V) 1000 0.1 1 10 100 0.01 100 Maximum Avalanche Drain Current vs. Ambient Temperature TA – Case Temperature (C) – Drain Current (A)ID 1 ms 10 /C0109s 100 /C0109s – Drain Current (A)ID 0.1 Limited by rDS(on) TA = 25C Single Pulse 10 ms 100 ms dc 0.1 0.01 10–6 10–2 10–1 11 0 Duty Cycle = 0.5 0.2 0.1 0.05 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 40C/W 3. TJM – TA = PDM ZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 10–3 0.02 Single Pulse /C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 /C0084/C0072/C0069/C0082/C0077/C0065/C0076 /C0082/C0065/C0084/C0073/C0078/C0071/C0083 K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. K3572 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com