K3566

2SK3566 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) V DGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 2.5 Drain current Pulse (t = 1 ms) (Note 1) IDP 7.5 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 216 mJ Avalanche current IAR 2.5 A Repetitive avalanche energy (Note 3) E AR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 3.125 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: V DD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VGS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS V DS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 1.5 A ⎯ 5.6 6.4 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 20 V, ID = 1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 50 ⎯ pF Rise time tr ⎯ 20 ⎯ Turn-on time ton ⎯ 60 ⎯ Fall time tf ⎯ 30 ⎯ Switching time Turn-off time t off ⎯ 100 ns Total gate charge Qg ⎯ 12 ⎯ Gate-source charge Qgs ⎯ 7 ⎯ Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID =2.5 A ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 2.5 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 7.5 A Forward voltage (diode) VDSF I DR =2.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 720 ⎯ ns Reverse recovery charge Qrr IDR = 2.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 3.6 ⎯ μC Marking RL = 133 Ω 0 V 10 V VGS VDD ∼ − 200 V ID = 1.5 A VOUT 50 Ω Duty < = 1%, tw = 10 μs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3566 Part No. (or abbreviation code)

DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS ( V ) ID – VDS DRAIN-SOURCE VOLTAGE V DS (V) ID – VDS DRAIN CURRENT I D (A) GATE-SOURCE VOLTAGE V GS ( V ) ID – VGS GATE-SOURCE VOLTAGE V GS (V) VDS – VGS DRAIN CURRENT I D (A) ⎪Yfs⎪ – ID DRAIN CURRENT I D (A) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 2.5 1.5 0.5 0 12 24 36 VGS = 4 V 4.75 5.25 5.5 4. 5 COMMON SOURCE Tc = 25°C PULSE TEST FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) 1.6 0.8 0.4 0 4 8 12 16 20 VGS = 4 V 4.75 5.255.5 1.2 4. 5 COMMON SOURCE Tc = 25°C PULSE TEST 0 2 4 8 10 12 Tc = −55°C 100 COMMON SOURCE VDS = 20 V PULSE TEST ID = 2.5 A 4 8 12 16 20 0.8 1.5 10 COMMON SOURCE Tc = 25℃ PULSE TEST 0.01 0.01 1 10 100 Tc = −55°C 0.1 0.1 COMMON SOURCE VDS = 20 V PULSE TEST 0.01 0.1 1 10 100 VGS = 10 V COMMON SOURCE Tc = 25°C PULSE TEST

VDD = 100 V VDS VGS 400 200 15 20 −80 −40 0 40 80 120 160 DRAIN POWER DISSIPATION PD (W) GATE THRESHOLD VOLTAGE Vth (V) CASE TEMPERATURE Tc (°C) RDS (ON) – Tc DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN-SOURCE VOLTAGE V DS (V) IDR – VDS DRAIN REVERSE CURRENT I DR (A) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE – VDS CAPACITANCE C (pF) CASE TEMPERATURE Tc (°C) Vth – Tc 0 40 80 120 160 200 CASE TEMPERATURE Tc (°C) PD – Tc GATE-SOURCE VOLTAGE V GS (V) TOTAL GATE CHARGE Q g ( n C ) DYNAMIC INPUT / OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE V DS (V) COMMON SOURCE ID = 2.5 A Tc = 25°C PULSE TEST 0.1 100 1000 1 10 100 Ciss Coss Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 160 −40 0 40 80 120 −80 ID = 1.5A

0.8 VGS = 10 V

0.1 −0.4 0.3 0.5 −0.8 −1.2 −1.6 VGS = 0V 10 COMMON SOURCE T c = 25°C PULSE TEST COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST

CHANNEL TEMPERATURE (INITIAL) Tch ( ° C ) 250 200 150 100 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE V DS ( V ) SAFE OPERATING AREA EAS – Tch AVALANCHE ENERGY EAS ( m J ) rth – tw PULSE WIDTH t w (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 43.4mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS DRAIN CURRENT I D (A) 0.01 10μ 0.1 100μ 1 ｍ 10ｍ 100ｍ 1 10 T PDM t Duty = t/T Rth (ch-c) = 1.25°C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 T PDM t Duty = t/T Rth (ch-c) = 3.125°C/W SINGLE PULSE 0.01 0.1 100 1 10 1000 100 10000 ※ SINGLE NONREPETITIVE PULSE Tc=25℃ CURVES MUST BE DERA TED LINEARL Y WITH INCREASE IN TEMPERATURE. ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 μs * 1 ms * VDSS max

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.