2SK3565 TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3565 unit：ｍｍ Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current Pulse (t = 1 ms) (Note 1) IDP 15 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 595 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1. Gate 2. Drain 3. So urce 0.64±0.15 2.6 4.5±0.2 1.1 1.1 0.69±0.15 2.8Max 12.5 Min. 15.0±0.3 3.9 3.0 φ3.2±0.2 10±0.3 2 3 1 2.7±0.2 TOSHIBA JEITA JEDEC Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2002-12-11 1
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ±10 µA Gate-source breakdown voltage V (BR) GSS IG =±10 µA, VGS = 0 V ±30 V Drain cut-off current IDSS VDS = 720 V, VGS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A 2.0 2.5 Ω Forward transfer admittance Yfs VDS = 20 V, ID = 3 A 2.0 4.5 S Input capacitance Ciss 1150 Reverse transfer capacitance Crss 20 Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 100 pF Rise time tr 30 Turn-on time ton 70 Fall time tf 60 Switching time Turn-off time toff 170 ns Total gate charge Qg 28 Gate-source charge Qgs 17 Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A 11 nC RL = 66.7 Ω <=Duty 1%, tw = 10 µs 4.7 Ω VOUT ID = 3 A VDD 200 V 0 V 10 V VGS Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 5 A Pulse drain reverse current (Note 1) IDRP 15 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V −1.7 V Reverse recovery time trr 900 ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/µs 5.4 µC 2002-12-11 2
rs. RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to the ir inherent electrical sensitivity and vulnerability to physical stress. It is the respons ibility of the bu yer, w hen uti lizing T OSHIBA products , to compl y with the sta ndards o f safety in making a safe d esign for the entir e system, and to avoid situ ations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent T OSHIBA pro ducts specifica tions. Also, pl ease keep in mind the preca utions an d conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. The TOSHIBA products liste d in this docu ment are inte nded for usag e in gen eral electronics ap plications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). T hese T OSHIBA products are neither intend ed n or warranted for usage i n equipm ent that requires extraordinarily high qua lity and/or reliability or a malfunction or failur e of w hich may cause loss of hum an life or bodily in jury (“Unintended Us age”). Unintended Us age i nclude atomic e nergy co ntrol i nstruments, air plane or spaceship i nstruments, trans portation instruments, traffic signa l instruments, combusti on contro l i nstruments, medical instru ments, all t ypes of safet y d evices, et c.. Uninte nded Usa ge of T OSHIBA products list ed in this document shall be made at the customer’s own risk. The information contain ed h erein is pres ented onl y as a guid e for the app lications of our products. No responsibility i s assumed by TOSHIBA CORPORAT ION for any i nfringements of intel lectual pr operty or other rights of the third parties which may result from its use. N o license is grant ed by implication or other wise under any intellectual property or other rights of TOSHIBA CORPORATION or othe The information contained herein is subject to change without notice.