K3467

2SK3467 NEC | Alldatasheet

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© 2001 MOS FIELD EFFECT TRANSISTOR 2SK3467 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D14991EJ1V0DS00 (1st edition) Date Published March 2001 NS CP(K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

DESCRIPTION

The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available
• Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 20 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC = 25°C) I D(DC) ±80 A Drain Current (Pulse) Note ID(pulse) ±320 A Total Power Dissipation (TA = 25°C) P T1 1.5 W Total Power Dissipation (TC = 25°C) P T2 76 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1%

ORDERING INFORMATION

2SK3467-ZK TO-263(MP-25ZK) (TO-220AB) (TO-263)

ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate voltage Drain Current I DSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 40 A 20 S Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 40 A 4.8 6.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 40 A 6.7 9.5 mΩ Input Capacitance C iss VDS = 10 V 2800 pF Output Capacitance C oss VGS = 0 V 1200 pF Reverse Transfer Capacitance C rss f = 1 MHz 600 pF Turn-on Delay Time t d(on) VDD = 10 V , ID = 40 A 16 ns Rise Time t r VGS(on) = 10 V 23 ns Turn-off Delay Time t d(off) RG = 10 Ω 74 ns Fall Time t f 31 ns Total Gate Charge Q G VDD = 16 V 55 nC Gate to Source Charge Q GS VGS = 10 V 9 nC Gate to Drain Charge Q GD ID = 80 A 17 nC Body Diode Forward Voltage V F(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 80 A, VGS = 0 V 44 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 40 nC TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS 10% 90% 10% VDS 90% td(on) tr td(off) t fτ ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet D14991EJ1V0DS 3 2SK3467 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 00 2 31 Pulsed VGS =10 V 100 150 200 250 300 350 7.0 V 4.5 V FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A Pulsed 12 345 VDS = 10 V 0.1 100 1000 Tch = −50˚C −25˚C 25˚C 75˚C 150˚C GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA 1.0 1.5 0.5 2.0 2.5 3.0 −50 −10 30 70 110 150 | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A Pulsed VDS = 10 V 100 0.1 0.01 0.1 1 10 100 Tch = 150˚C 75˚C 25˚C −25˚C −50˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ 0 1051 5 2 0 Pulsed ID = 80 A 40 A 16 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 10 100 10001 Pulsed VGS = 4.5 V 7.0 V 10 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 −10 30 70 110 150 7.0 V 10 V VGS = 4.5 V ID = 40 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A VSD - Source to Drain Voltage - V Pulsed 0.1 0.01 100 1000 0 V 4.5 V VGS = 10 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz C oss C rss C iss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tf tr td(on) td(off) VDD = 10 V VGS = 10 V RG = 10 Ω REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT ISD - Diode Forward Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 V 0.1 1 10 100 1000 100 µ DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 00 10 20 30 40 50 60 VDD = 16 V 10 V VDS VGS ID = 80 A

Data Sheet D14991EJ1V0DS 5 2SK3467 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - ˚C dT - Percentage of Rated Power - % 04 020 60 140 80 120100 160 100 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 8020 40 60 100 140 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA 1 10 100 ID - Drain Current - A 0.1 VDS - Drain to Source Voltage - V 100 1000 Power Dissipation Limited 100 µs 10 ms 300 µs1 ms3 ms PW = 10 µs DC ID(DC) ID(pulse) TC = 25˚C Single Pulse RDS(on) Limited (@V GS = 10 V) PW - Pulse Width - sec TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C /W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single Pulse 10 100 R th(ch-C) = 1.65˚C /W µ µ R th(ch-A) = 83.3˚C /W

PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-263 (MP-25ZK) EQUIVALENT CIRCUIT Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ Source Body Diode Gate Protection Diode Gate Drain 10.0±0.2 8.0 TYP. 2.54 0.7±0.15 9.15±0.2 2.45±0.25 15.25±0.5 1.35±0.3 123 2.5 4.45±0.2 1.3±0.2 0.5±0.2 0 to 8o 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.4No plating 8.4 TYP. 0.025 to 0.25 0.25

Data Sheet D14991EJ1V0DS 7 2SK3467 [MEMO]

M8E 00. 4 The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).