K3455

2SK3455 NEC | Alldatasheet

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Technical content

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2000 MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET Document No. D14757EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan DATA SHEET

DESCRIPTION

The 2SK3455 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)
• Avalanche capability ratings
• Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 500 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) (TC = 25°C) I D(DC) ±12 A Drain Current (Pulse) Note1 ID(pulse) ±36 A Total Power Dissipation (TA = 25°C) P T1 2.0 W Total Power Dissipation (TC = 25°C) P T2 50 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS 12 A Single Avalanche Energy Note2 EAS 103 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 500 V, VGS = 0 V 100 µA Gate Leakage Current I GSS VGS = ±30 V, VDS = 0 V ±100 nA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 6.0 A 2.0 S Drain to Source On-state Resistance R DS(on) VGS = 10 V, ID = 6.0 A 0.50 0.60 Ω Input Capacitance C iss VDS = 10 V 1620 pF Output Capacitance C oss VGS = 0 V 250 pF Reverse Transfer Capacitance C rss f = 1 MHz 10 pF Turn-on Delay Time t d(on) VDD = 150 V, ID = 6.0 A 24 ns Rise Time t r VGS = 10 V 18 ns Turn-off Delay Time t d(off) RG = 10 Ω 50 ns Fall Time t f 15 ns Total Gate Charge Q G VDD = 400 V 30 nC Gate to Source Charge Q GS VGS = 10 V 9 nC Gate to Drain Charge Q GD ID = 12 A 11 nC Body Diode Forward Voltage V F(S-D) IF = 12 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 12 A, VGS = 0 V 1.5 µs Reverse Recovery Charge Q rr di/dt = 50 A/ µs1 1 µC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form ID Wave Form VGS ID 10%0 90% 90% 90% VGS ID ton toff td(on) tr td(off) tf 10% 10% µ

Data Sheet D14757EJ1V0DS 3 2SK3455 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 20 30 40 VGS = 20 VPulsed 10 V FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.001 0.1 0.01 100 01 0 51 5 −50˚C −25˚C 25˚C 125˚C 75˚C TA = 150˚C Pulsed VDS = 10 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA −50 0 150500 1.0 100 2.0 3.0 4.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S ID - Drain Current - A 0.1 0.01 100 10 1000.1 −25˚C 25˚C 75˚C 125˚C TA = −50˚C 150˚C VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - Ω 0.4 10 15 20 1.2 1.4 0.8 0.2 1.0 0.6 Pulsed 6.0 A 2.4 A ID = 12 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - Ω 10.1 1.5 0.9 0.3 1.2 0.6 10 100 Pulsed VGS = 10 V 20 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - Ω −50 1.6 1.4 1.2 1.0 0.6 0.4 0.2 0 0 50 100 150 0.8 12 A ID = 6.0 A VGS = 10 V Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE V SD - Source to Drain Voltage - V ISD - Diode Forward Current - A 0.01 0.1 0.5 1.0 1.5 100 VGS = 10 V 0 V Pulsed CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 0.1 1 10 1000 100 VGS = 0 V f = 1 MHz C iss C oss C rss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 10.1 1000 100 10 100 VDD = 150 V VGS = 10 V R G = 10 Ω tf tr td(on) td(off) REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery Time - ns 0.1 1 1 10 100 100 1000 10000 di/dt = 50 A/ s VGS = 0 V µ VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 5 1 01 52 02 53 03 5 200 400 600 ID = 12 A VDS VDD = 400 V 250 V 125 V V GS

Data Sheet D14757EJ1V0DS 5 2SK3455 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % 00 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 00 20 40 60 80 100 120 140 160 FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 100 100 1000 TC = 25˚C Single Pulse 11 0 RDS(on) Limited ID(DC) ID(pulse) PW = 10 µs 100 µs1 ms 3 ms 10 ms 30 ms 100 ms Power Dissipation Limited TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C /W 1000 100 0.1 0.001 0.01 100 m 1 10 100 100010 µµ 100 1 m 10 m R th(ch-C) = 2.5˚C /W R th(ch-A) = 62.5˚C /W Single Pulse

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD L - Inductive Load - mH IAS - Single Avalanche Current - A 100 11 0 VDD = 150 V VGS = 20 → 0 V R G = 25 Ω IAS = 12 A 0.01 0.1 0.1 EAS = 103 mJ Starting Tch = 25˚C SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 25 50 75 100 120 100 125 150 VDD = 150 V R G = 25 Ω VGS = 20 → 0 V IAS ≤ 12 A

Data Sheet D14757EJ1V0DS 7 2SK3455 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 2.5±0.1 0.65±0.11.5±0.2 2.54 TYP. 1.3±0.2 2.54 TYP. 0.7±0.1 4±0.2 15.0±0.3 12.0±0.2 3±0.1 123 1.Gate 2.Drain 3.Source 13.5 MIN. φ EQUIVALENT CIRCUIT Source Body DiodeGate Drain

M8E 00. 4 The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).