K3435

2SK3435 NEC | Alldatasheet

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Technical content

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1999, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PRELIMINARY DATA SHEET Document No. D14604EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan

DESCRIPTION

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Super low on-state resistance: R DS(on)1 = 14 m Ω MAX. (VGS = 10 V, ID = 40 A) R DS(on)2 = 22 m Ω MAX. (VGS = 4.0 V, ID = 40 A)
• Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±80 A Drain Current (pulse) Note1 ID(pulse) ±320 A Total Power Dissipation (TC = 25°C) P T 84 W Total Power Dissipation (TA = 25°C) P T 1.5 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current Note2 IAS 31 A Single Avalanche Energy Note2 EAS 96 mJ Notes 1.PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case R th(ch-C) 1.49 °C/W Channel to Ambient R th(ch-A) 83.3 °C/W

ORDERING INFORMATION

(TO-220AB) (TO-262) (TO-220SMD) The mark ★ shows major revised points.

Preliminary Data Sheet D14604EJ1V0DS002 2SK3435 ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 40 A 11 14 m Ω R DS(on)2 VGS = 4.0 V, ID = 40 A 16 22 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 40 A 21 43 S Drain Leakage Current I DSS VDS = 60 V, VGS = 0 V1 0 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V, VGS = 0 V, f = 1 MHz 3200 pF Output Capacitance C oss 520 pF Reverse Transfer Capacitance C rss 260 pF Turn-on Delay Time t d(on) ID = 40 A, VGS(on) = 10 V, VDD = 30 V, 80 ns Rise Time t r R G = 10 Ω 1200 ns Turn-off Delay Time t d(off) 200 ns Fall Time t f 350 ns Total Gate Charge Q G ID = 80 A , VDD = 48 V, VGS = 10 V6 0 n C Gate to Source Charge Q GS 10 nC Gate to Drain Charge Q GD 16 nC Body Diode Forward Voltage V F(S-D) IF = 80 A, VGS = 0 V1 . 0 V Reverse Recovery Time t rr IF = 80 A, VGS = 0 V, 46 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs6 6 n C TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS (on) 10 %0 ID 90 % 90 % td(on) tr td(off) t f 10 % τ ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Preliminary Data Sheet D14604EJ1V0DS00 3 2SK3435 PACKAGE DRAWINGS (Unit: mm) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 1) TO-220AB (MP-25) 3) TO-220SMD (MP-25Z) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 (10) 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 2) TO-262 (MP-25 Fin Cut) (10) 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2 123 3.0±0.5 11±0.4 2.8±0.2 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R)(0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0±0.3 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

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