K3407

2SK3407 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSV) 2SK3407 Switching Regulator Applications /Gb7/G20Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) /Gb7/G20High forward transfer admittance: |Yfs| = 7.5 S (typ.) /Gb7/G20Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) /Gb7/G20Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V , ID = 1 mA) Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 450 V Drain-gate voltage (RGS /G3d 20 k/G57) V DGR 450 V Gate-source voltage V GSS /Gb130 V DC (Note 1) I D 10 Drain current Pulse (Note 1) I DP 40 A Drain power dissipation (Tc /G3d 25°C) P D 40 W Single pulse avalanche energy (Note 2) EAS 222 mJ Avalanche current I AR 10 A Repetitive avalanche energy (Note 3) E AR 4 mJ Channel temperature T ch 150 °C Storage temperature range T stg /G2d55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 3.125 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V DD /G3d 90 V, Tch /G3d 25°C (initial), L /G3d 3.7 mH, RG /G3d 25 /G57, IAR /G3d 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.)

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d /Gb125 V, VDS /G3d 0 V /Gbe/G20 /Gbe/G20 /Gb110 /G6dA/G20 Gate-source breakdown voltage V (BR) GSS IG /G3d /Gb110 /G6dA, VDS /G3d 0 V /Gb130 /Gbe /Gbe V /G20 Drain cut-off current I DSS V DS /G3d 450 V, VGS /G3d 0 V /Gbe /Gbe 100 /G6dA Drain-source breakdown voltage V (BR) DSS ID /G3d 10 mA, VGS /G3d 0 V 450 /Gbe /Gbe V /G20 Gate threshold voltage V th V DS /G3d 10 V, ID /G3d 1 mA 2.4 /Gbe 3.4 V /G20 Drain-source ON resistance R DS (ON) V GS /G3d 10 V, ID /G3d 5 A /Gbe 0.48 0.65 /G57 Forward transfer admittance /GefYfs/Gef V DS /G3d 10 V, ID /G3d 5 A 3.5 7.5 /Gbe/G20S Input capacitance C iss /Gbe 1400 /Gbe Reverse transfer capacitance C rss /Gbe 240 /Gbe Output capacitance C oss VDS /G3d 10 V, VGS /G3d 0 V, f /G3d 1 MHz/G20 /Gbe 590 /Gbe pF Rise time t r /Gbe 35 /Gbe Turn-on time t on /Gbe/G2050 /Gbe/G20 Fall time t f /Gbe/G2080 /Gbe/G20 Switching time Turn-off time t off /G20 /G20 /Gbe 260 /Gbe/G20 ns Total gate charge (gate-source plus gate-drain) Qg /Gbe 35 /Gbe/G20 Gate-source charge Q gs /Gbe 19 /Gbe/G20 Gate-drain “miller” charge Q gd VDD /G7e/G2d360 V, VGS /G3d 10 V, ID /G3d 10 A /Gbe 16 /Gbe/G20 nC/G20 Source-Drain Ratings and Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR /Gbe /Gbe /Gbe 10 A Pulse drain reverse current (Note 1) I DRP /Gbe /Gbe /Gbe 40 A Forward voltage (diode) V DSF I DR /G3d 10 A, VGS /G3d 0 V /Gbe /Gbe /G2d1.7 V Reverse recovery time t rr /Gbe 280 /Gbe ns Reverse recovery charge Q rr IDR /G3d 10 A, VGS /G3d 0 V, dIDR/dt /G3d 100 A//G6ds /Gbe 2.7 /Gbe /G6dC Marking TypeK3407 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) Duty /G3c/G3d1%, tw /G3d 10 /G6ds 0 V

10 VVGS

ID – VDS ID – VDS ID – VGS VDS – VGS RDS (ON) – ID /GefYfs/Gef – ID 1 10 100 0.1 Common source Tc /G3d 25°C Pulse test VGS /G3d 10, 15 V ID /G3d 10 A 4 8 12 20 2.5 Common source Tc /G3d 25°C Pulse test Forward transfer admittance /GefYfs/Gef ( S ) Drain-source voltage V DS (V) Drain current I D (A) Drain-source voltage V DS (V) Drain current I D (A) Gate-source voltage V GS (V) Drain current I D (A) Gate-source voltage V GS (V) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( /G57) Drain-source voltage V DS (V) 2 4 8 6 10 VGS /G3d 4.5 V 10 15 Common source Tc /G3d 25°C Pulse test 5.25 5.5 5.75 0 8 6 2 4 10 Common source VDS /G3d 20 V Pulse test Tc /G3d /G2d55°C 100 0.1 1 10 100 Common source VDS /G3d 20 V Pulse test 25 100 Tc /G3d /G2d55°C 0.3 0.1 0.3 3 30 0 10 20 30 40 50 VGS /G3d 4.5 V Common source Tc /G3d 25°C Pulse test 5.5 15 10 6.5 6.75 6.25

RDS (ON) – Tc IDR – VDS Vth – Tc PD – Tc 200 0 40 80 120 160 Drain power dissipation P D (W) Case temperature Tc (°C) Drain-source ON resistance RDS (ON) ( /G57) Drain-source voltage V DS (V) Drain reverse current I DR (A) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Case temperature Tc (°C) Case temperature Tc (°C) Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Drain-source voltage V DS (V) Dynamic input/output characteristics Gate threshold voltage V th (V) 2.0 1.2 /G2d80 /G2d40 0 40 80 160 120 0.4 0.8 ID /G3d 10 A 2.5 1.6 Common source VGS /G3d 10 V Pulse test 160 /G2d80 /G2d40 0 40 80 120 Common source VDS /G3d 10 V ID /G3d 1 mA Pulse test 500 400 100 200 300 0 10 20 30 50 40 Common source ID /G3d 10 A Tc /G3d 25°C Pulse test VDS 360 180 VGS VDD /G3d 90 V 0.01 /G2d0.4 0.1 100 /G2d0.6 /G2d0.8 /G2d1.2 /G2d0.2 /G2d1 VGS /G3d 0, /G2d1 V Common source Tc /G3d 25°C Pulse test 0.1 100 1000 3000 1 10 100 300 Common source VGS /G3d 0 V f /G3d 1 MHz Tc /G3d 25°C Ciss Coss Crss 30 3 0.3 300

Drain current I D (A) Channel temperature (initial) T ch (°C) Avalanche energy E AS (mJ) Pulse width t w (S) Normalized transient thermal impedance rth (t)/Rth (ch-c) Drain-source voltage V DS (V) Safe operating area rth – tw /G2d15 V 15 V Test circuit Wave form IAR BVDSS VDD V DS RG /G3d 25 /G57/G20 VDD /G3d 90 V, L /G3d 3.7 mH /Gf7/Gf7 /Gf8 /Gf6 /Ge7/Ge7 /Ge8 /Ge6 /G2d/Gd7/Gd7/Gd7/G3d VDDBVDSS BVDSS2IL2 1ΕAS EAS – Tch 0.01 10 /G6d 0.1 100 /G6d 1 m 10 m 100 m 1 10 T PDM t Duty /G3d t/T Rth (ch-c) /G3d 3.125°C/W Duty /G3d 0.5 0.2 0.1 Single pulse 0.05 0.02 0.01 0.001 0.003 0.005 0.03 0.05 0.3 0.5 100 200 300 50 100 400 25 75 150 125 0.01 0.1 100 10 100 1000 * Single nonrepetitive pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC operation Tc /G3d 25°C 100 /G6ds * 1 ms * VDSS max

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE