2SK3377 KEXIN | Alldatasheet
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RDS(on)1 =4 4m MAX. (VGS =1 0V ,ID =1 0A ) RDS(on)2 =7 8m MAX. (VGS =4 . 0V ,ID =1 0A ) Low Ciss :C iss = 760 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 60 V Gate to source voltage V GSS 20 V ID 20 A Idp * 50 A Power dissipation T C=25 30 TA=25 1.0 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current I DSS VDS=60V,VGS=0 10 A Gate leakage current I GSS VGS= 20V,VDS=0 10 A Gat cutoff voltage V GS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=10A 5 10 S RDS(on)1 VGS=10V,ID=10A 35 44 m RDS(on)2 VGS=4.0V,ID=10A 54 78 m Input capacitance C iss 760 pF Output capacitance C oss 150 pF Reverse transfer capacitance C rss 71 pF Turn-on delay time t on 13 ns Rise time t r 170 ns Turn-off delay time t off 43 ns Fall time tf 34 ns Total Gate Charge Q G 17 nC Gate to Source Charge Q GS 3.0 nC Gate to Drain Charge Q GD 4.7 nC VDS=10V,VGS=0,f=1MHZ ID=10A,VGS(on)=10V,RG=10 ,VDD=30V Drain to source on-state resistance ID =20 A, VDD =4 8V ,VGS =1 0V