K3353

2SK3353 NEC | Alldatasheet

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© 1999 MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14130EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark ★ shows major revised points.

DESCRIPTION

The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Super low on-state resistance: R DS(on)1 = 9.5 m Ω MAX. (VGS = 10 V, ID = 41 A) R DS(on)2 = 14 m Ω MAX. (VGS = 4 V, ID = 41 A)
• Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS(AC) ±20 V Drain Current (DC) I D(DC) ±82 A Drain Current (pulse) Note1 ID(pulse) ±328 A Total Power Dissipation (TC = 25°C) P T 95 W Total Power Dissipation (TA = 25°C) P T 1.5 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current Note2 IAS 45 A Single Avalanche Energy Note2 EAS 202 mJ Notes 1.PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.32 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W

ORDERING INFORMATION

Data Sheet D14130EJ1V0DS002 2SK3353 ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 41 A7 . 5 9 . 5 m Ω R DS(on)2 VGS = 4 V, ID = 41 A 10.5 14 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 41 A3 0 5 0 S Drain Leakage Current I DSS VDS = 60 V, VGS = 0 V1 0 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V, VGS = 0 V, f = 1 MHz 4650 pF Output Capacitance C oss 780 pF Reverse Transfer Capacitance C rss 380 pF Turn-on Delay Time t d(on) ID = 41 A, VGS(on) = 10 V, VDD = 30 V, 100 ns Rise Time t r R G = 10 Ω 1550 ns Turn-off Delay Time t d(off) 280 ns Fall Time t f 420 ns Total Gate Charge Q G ID = 82 A , VDD = 48 V, VGS = 10 V9 0 n C Gate to Source Charge Q GS 14 nC Gate to Drain Charge Q GD 38 nC Body Diode Forward Voltage V F(S-D) IF = 82 A, VGS = 0 V1 . 0 V Reverse Recovery Time t rr IF = 82 A, VGS = 0 V, 60 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 110 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. R G = 10 Ω D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1 % τ VGS Wave Form ID Wave Form VGS ID 10 %0 90 % 90 % 90 % VGS(on) ID ton toff td(on) tr td(off) tf 10 %1 0 %

Data Sheet D14130EJ1V0DS00 3 2SK3353 PACKAGE DRAWING (Unit: mm) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 1) TO-220AB (MP-25) 3) TO-220SMD (MP-25Z) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 (10) 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 2) TO-262 (MP-25 Fin Cut) (10) 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2 123 3.0±0.5 11±0.4 2.8±0.2 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R)(0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0±0.3 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

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