2SK3342 TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π−MOSV) 2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications /G6c/G20Low drain−source ON resistance : R DS (ON) = 0.8 Ω (typ.) /G6c/G20High forward transfer admittance : |Y fs| = 4.5 S (typ.) /G6c/G20Low leakage current : I DSS = 100 µA (max) (VDS = 250 V) /G6c/G20Enhancement−mode : V th = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V DSS 250 V Drain−gate voltage (RGS = 20 kΩ) VDGR 250 V Gate−source voltage V GSS ±20 V DC (Note 1) I D 4.5 A Drain current Pulse (Note 1) I DP 18 A Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 51 mJ Avalanche current I AR 4.5 A Repetitive avalanche energy (Note 3) E AR 2.0 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V DD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, I AR = 4.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current I DSS VDS = 250 V, VGS = 0 V — — 100 µA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 — — V Gate threshold voltage V th VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain−source ON resistance R DS (ON) VGS = 10 V, ID = 2.5 A — 0.8 1.0 Ω Forward transfer admittance |Y fs| V DS = 10 V, ID = 2.5 A 2.0 4.5 — S Input capacitance C iss — 440 — Reverse transfer capacitance C rss — 35 — Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz — 120 — pF Rise time tr — 15 — Turn−on time t on — 20 — Fall time t f — 15 — Switching time Turn−off time t off — 60 — ns Total gate charge (Gate−source plus gate−drain) Qg — 10 — Gate−source charge Q gs — 6 — Gate−drain (“miller”) charge Q gd VDD ≈ 100 V, VGS = 10 V, ID = 4.5 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 4.5 A Pulse drain reverse current (Note 1) IDRP — — — 18 A Forward voltage (diode) V DSF IDR = 4.5 A, VGS = 0 V — — −2.0 V Reverse recovery time t rr — 110 — ns Reverse recovery charge Q rr IDR = 4.5 A, VGS = 0 V dIDR / dt = 100 A / µs — 0.47 — µC Marking
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE