K3116

2SK3116 NEC | Alldatasheet

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© 1998 MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan DATA SHEET The mark # shows major revised points. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

DESCRIPTION

The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)
• Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 600 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) I D(DC) ±7.5 A Drain Current (pulse) Note1 ID(pulse) ±30 A Total Power Dissipation (TA = 25°C) P T1 1.5 W Total Power Dissipation (TC = 25°C) P T2 70 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS 7.5 A Single Avalanche Energy Note2 EAS 37.5 mJ Diode Recovery dv/dt Note3 dv/dt 3.5 V/ns Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHRACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current I GSS VGS = ±30 V, VDS = 0 V ±100 nA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 3.75 A 2.0 S Drain to Source On-state Resistance R DS(on) VGS = 10 V, ID = 3.75 A 0.9 1.2 Ω Input Capacitance C iss VDS = 10 V 1100 pF Output Capacitance C oss VGS = 0 V 200 pF Reverse Transfer Capacitance C rss f = 1 MHz 20 pF Turn-on Delay Time t d(on) VDD = 150 V, ID = 3.75 A 18 ns Rise Time t r VGS = 10 V 15 ns Turn-off Delay Time t d(off) RG = 10 Ω 50 ns Fall Time t f RL = 50 Ω 15 ns Total Gate Charge Q G VDD = 450 V 26 nC Gate to Source Charge Q GS VGS = 10 V 6 nC Gate to Drain Charge Q GD ID = 7.5 A 10 nC Body Diode Forward Voltage V F(S-D) IF = 7.5 A, VGS = 0 V 1.0 V Reverse Recovery Time T rr IF = 7.5 A, VGS = 0 V 1.6 µs Reverse Recovery Charge Q rr di/dt = 50 A/ µs 7.6 µC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. R G = 10 Ω D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form ID Wave Form VGS ID 10%0 90% 90% 90% VGS ID ton toff td(on) tr td(off) tf 10% 10%

Data Sheet D13339EJ2V0DS 3 2SK3116 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 10 40 20 30 6 V VGS = 10 V 8 V Pulsed FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 151050 100 1.0 0.1 VDS = 10 V Pulsed Tch = 125˚C 75˚C Tch = 25˚C −25˚C GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate Cut-off Voltage - V −50 0 50 100 150 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.0 10 ID - Drain Current - A | yfs | - Forward Transfer Admittance - S 0.1 1.0 0.1 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0 VGS - Gate to Source Voltage - V R DS (on) - Drain to Source On-State Resistance - Ω 1.0 51 50 3.0 Pulsed ID = 4.0 A 7.5 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 1.0 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - Ω 2.0 3.0 VGS = 10 V 20 V Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 150 R DS (on) - Drain to Source On-State Resistance - Ω 2.0 0 100−50 Tch - Channel Temperature - ˚C 3.0 1.0 VGS = 10 V 4.0 4.0 A Pulsed ID = 7.5 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A 1.51.00.50 100 1.0 0.1 Pulsed

0 VVGS = 10 V

1000100101.0 10000 1000 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Coss, Crss - Capacitance - pF C iss C oss C rssVGS = 0 V f = 1 MHz VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 0.1 1 10 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 100 0.1 VDD = 150 V VGS = 10 V R G = 10 Ω td(off) td(on) tf tr REVERSE RECOVERY TIME vs. DRAIN CURRENT 1.0 10 100 trr - Reverse Recovery Time - ns 0.1 ID - Drain Current - A 10000 1000 100 di/dt = 50 A/ µs VGS = 0 V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 01 2 82 0 3 2 600 400 200 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V ID = 7.5 A VGS VDD = 450 V 300 V 150 V VDS

Data Sheet D13339EJ2V0DS 5 2SK3116 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % 04 020 60 100 140 80 120 160 100 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 08 0 20 40 60 100 140 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA 10 100 1000 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 Power Dissipation Limited 100 µs 10 ms 1 ms 100 ms PW = 10 µs ID(pulse) ID(DC) 3 ms 30 ms TC = 25˚C Single Pulse DC RDS(on) Limited TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 100 m 1 10 100 100010 m1 m10010 100 0.1 0.01 R th(ch-A) = 83.3˚C/W R th(ch-C) = 1.79˚C/W µ µ

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 µ 1 m 10 m 100 L - Inductive Load - H IAS - Single Avalanche Current - A 1.0 0.1 10 µ R G = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C EAS = 37.5 mJ IAS = 7.5 A SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 50 10025 VDD = 150 V R G = 25 Ω VGS = 20 → 0 V IAS ≤ 7.5 A 100 120

Data Sheet D13339EJ2V0DS 7 2SK3116 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3) TO-263 (MP-25ZJ) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2123 5.7±0.4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 2.8±0.2 EQUIVALENT CIRCUIT Body Diode Source (S) Drain (D) Gate (G)

M8E 00. 4 The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).