K3113B

2SK3113B NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006

DESCRIPTION

The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating : ±30 V
• Avalanche capability ratings

ORDERING INFORMATION

TO-251 (MP-3-a) typ. 0.39 g 2SK3113B(1)-S27-AY Note Tube 75 p/tube TO-251 (MP-3-b) typ. 0.34 g 2SK3113B-ZK-E1-AY Note 2SK3113B-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A Drain Current (pulse) Note1 ID(pulse) ±8.0 A Total Power Dissipation (TC = 25°C) PT1 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.0 W Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V (TO-251) (TO-252) <R>

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 μA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 1.0 A 0.5 0.9 S Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 1.0 A 3.2 4.4 Ω Input Capacitance Ciss VDS = 10 V 290 pF Output Capacitance Coss VGS = 0 V pF Reverse Transfer Capacitance Crss f = 1 MHz pF Turn-on Delay Time td(on) VDD = 150 V, ID = 1.0 A 10.5 ns Rise Time tr VGS = 10 V 4.8 ns Turn-off Delay Time td(off) RG = 10 Ω 15.8 ns Fall Time tf RL = 10 Ω 10.5 ns Total Gate Charge QG VDD = 450 V 7.9 nC Gate to Source Charge QGS VGS = 10 V 2.7 nC Gate to Drain Charge QGD ID = 2.0 A 3.2 nC Body Diode Forward Voltage Note VF(S-D) IF = 2.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 2.0 A, VGS = 0 V 190 ns Reverse Recovery Charge Qrr di/dt = 50 A/μs 500 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90% VGS 10% ID 90% 90% td(on) tr td(off) t f 10% τ ID ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA

TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 140 120 160 100 Tch - Channel Temperature - °C PT - Total Power Dissipation - W 100 140 120 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.01 0.1 100 100 1000 100 μs 1 ms 10 ms ID(pulse) ID(DC) RDS(on) Limited (at VGS = 10 V) PW = 10 μs Power Dissipation Limited Tc = 25°C, Single pulse VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth(ch-A) = 125°C/W Rth(ch-C) = 6.25°C/W Single pulse PW - Pulse Width – s 100 μ 1 m 10 m 100 m 100 1000

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0.5 1.5 2.5 3.5 4.5 VGS = 10 V Pulsed 8 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.01 0.1 100 VDS = 10 V Pulsed Tch = 125°C 75°C 25°C −25°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V 0.5 1.5 2.5 3.5 4.5 -50 100 150 VDS = 10 V ID = 1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.01 0.1 0.01 0.1 VDS = 10 V Pulsed Tch = − 25°C 25°C 75°C 125°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID = 2.0 A 1.0 A Pulsed VGS – Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.01 0.1 VGS = 10 V 20 V Pulsed ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω -50 100 150 ID = 2.0 A 1.0 A VGS = 10 V Pulsed Tch - Channel Temperature - °C IF – Diode Forward Current - A 0.01 0.1 100 0.0 0.5 1.0 V GS = 10 V 0 V Pulsed VF(S-D) – Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pF 100 1000 0.1 100 C iss C oss C rss VGS = 0 V f = 1 MHz VDS - Drain to Source Voltage – V td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 tr td(off) td(on) tf VDD = 150 V VGS = 10 V RG = 10 Ω ID - Drain Current - A REVWESE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS trr – Reverse Recovery Time - ns 100 1000 0.1 di/dt = 50 A/μs VGS = 0 V ID - Drain Current - A VDS – Drain to Source Voltage - V 100 200 300 400 500 600 ID = 2.0 A VDD = 450 V 300 V 150 V VDS VGS QG – Gate Chage - nC VGS – Gate to Source Voltage - V

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A 100 μ 1 m 10 m 100 1.0 0.1 10 μ RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C IAS = 2.0 A EAS = 2.7 mJ L - Inductive Load - H Energy Derating Factor - % 150 125 100 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A 100 120 Starting Tch - Starting Channel Temperature - °C

PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3-a) 2) TO-251 (MP-3-b) 6.6 ±0.2 Mold Area 2.3 ±0.1 0.5 ±0.1 0.76 ±0.1 0.5 ±0.1 No Plating 5.3 TYP. 0.7 TYP. 6.1 ±0.2 1.8 ±0.2 9.3 TYP. 4.0 MIN. 1.02 TYP. 16.1 TYP. 4.3 MIN. 1.14 MAX. 2.3 TYP. 2.3 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 6.6±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0.5±0.1 5.3 TYP. 2.3 TYP. 2.3 TYP. 1.14 MAX. 1.06 TYP. 11.25 TYP. 4.13 TYP. 1.04 TYP. 6.1±0.2 1.1±0.13 3) TO-252 (MP-3ZK) EQUIVALENT CIRCUIT 6.5±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0 to 0.25 0.5±0.1 1.0 No Plating No Plating 5.1 TYP. 1.0 TYP. 6.1±0.2 0.51 MIN. 4.0 MIN. 0.8 10.4 MAX. (9.8 TYP.) 4.3 MIN. 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. <R>

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