K3113

2SK3113 NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D13336EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan 1998, 2001 The mark shows major revised points.

DESCRIPTION

The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low on-state resistance R DS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge Q G = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 600 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) (TC = 25°C) I D(DC) ±2.0 A Drain Current (pulse) Note1 ID(pulse) ±8.0 A Total Power Dissipation (TC = 25°C) P T1 20 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V (TO-251) (TO-252)

ORDERING INFORMATION

2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z)

Data Sheet D13336EJ3V0DS 2 2SK3113 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 600 V, VGS = 0 V 100 µA Gate Leakage Current I GSS V GS = ±30 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) V DS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | y fs | V DS = 10 V, ID = 1.0 A 0.5 S Drain to Source On-state Resistance R DS(on) V GS = 10 V, ID = 1.0 A 3.3 4.4 Ω Input Capacitance C iss V DS = 10 V 290 pF Output Capacitance C oss V GS = 0 V 60 pF Reverse Transfer Capacitance C rss f = 1 MHz 5 pF Turn-on Delay Time t d(on) V DD = 150 V, ID = 1.0 A 7 ns Rise Time t r V GS = 10 V 2 ns Turn-off Delay Time t d(off) R G = 10 Ω, RL = 10 Ω 22 ns Fall Time t f 9 ns Total Gate Charge Q G V DD = 450 V 9 nC Gate to Source Charge Q GS V GS = 10 V 2.4 nC Gate to Drain Charge Q GD I D = 2.0 A 2 nC Body Diode Forward Voltage V F(S-D) I F = 2.0 A, VGS = 0 V 0.9 V Reverse Recovery Time t rr I F = 2.0 A, VGS = 0 V 0.9 µs Reverse Recovery Charge Q rr di/dt = 50 A/µs 2.0 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BVDSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 sµ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90%VGS 10%0 ID 90% 90% td(on) tr td(off) t f 10% τ ID ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA

Data Sheet D13336EJ3V0DS 3 2SK3113 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - ˚C dT - Percentage of Rated Power - % 04 0 20 60 100 140 80 120 160 100 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 00 8020 40 60 100 140 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm FORWARD BIAS SAFE OPERATING AREA 10 100 1000 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 Power Dissipation Limited 100 µs 10 ms 1 ms 100 ms PW = 10 µs ID(pulse) ID(DC) DC TC = 25˚C, Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm RDS(on) Limited (at V GS = 20 V) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 100 m 1 10 100 100010 m1 m100 µ10 µ 100 0.1 0.01 Rth(ch-A) = 125˚C/W Rth(ch-C) = 6.25˚C/W Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm

Data Sheet D13336EJ3V0DS 4 2SK3113 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 10 40 20 30 6 V VGS = 10 V 8 V Pulsed FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 151050 100 1.0 0.1 VDS = 10 V Pulsed Tch = 125˚C 75˚C Tch = 25˚C −25˚C GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate Cut-off Voltage - V −50 0 50 100 150 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S 0.1 1.0 100.01 0.1

100 VDS = 10 V

Tch = −25˚C 25˚C 75˚C 125˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 51 50 Pulsed ID = 2.0 A 1.0 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.1 11 0 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω VGS = 10 V 20 V Pulsed

Data Sheet D13336EJ3V0DS 5 2SK3113 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 150 RDS(on) - Drain to Source On-state Resistance - Ω 0 100−50 Tch - Channel Temperature - ˚C VGS = 10 V 1 A6 ID = 2 A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A 1.51.00.50 100 1.0 0.1 Pulsed 0 V VGS = 10 V 1001010.1 10000 1000 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF Ciss Coss CrssVGS = 0 V f = 1 MHz VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 0.1 1 10 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 100 0.1 VDD = 150 V VGS = 10 V RG = 10 Ω td(off) td(on) tf tr REVERSE RECOVERY TIME vs. DRAIN CURRENT 1.0 10 100 trr - Reverse Recovery Time - ns 0.1 ID - Drain Current - A 10000 1000 100 di/dt = 50 A/µs VGS = 0 V QG - Gate Charge - nC VDS - Drain to Source Voltage - V 841 2 1 6 600 400 200 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V VDS ID = 2.0 A VGS 800 VDD = 450 V 300 V 150 V

Data Sheet D13336EJ3V0DS 6 2SK3113 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 µ 1 m 10 m 100 L - Inductive Load - H IAS - Single Avalanche Current - A 1.0 0.1 10 µ RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C EAS = 2.7 mJ IAS = 2.0 A SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 50 10025 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A 100 120

Data Sheet D13336EJ3V0DS 7 2SK3113 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 213 6.5 ±0.2 5.0 ±0.2 1.5 −0.1 +0.2 5.5 ±0.27.0 MIN. 13.7 MIN. 2.32.3 0.75 0.5 ±0.1 2.3 ±0.2 1.6 ±0.2 1.1 ±0.2 0.5 −0.1 +0.2 0.5 −0.1 +0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 123 6.5 ±0.2 5.0 ±0.2 4.3 MAX.0.8 2.3 2.3 0.9 MAX. 5.5 ±0.2 10.0 MAX. 2.0 MIN. 1.5 −0.1 +0.2 2.3 ±0.2 0.5 ±0.1 0.8 MAX. 0.8 1.0 MIN. 1.8TYP.0.7 1.1 ±0.2 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of t he transistor serves as a protector against ESD. When this device actually used, an addi tional protection circuit is exter nally required if a voltage exceeding the rated voltage may be applied to this device.

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