2SK30A ETC1 | Alldatasheet
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Si l i con Junct i on FETs XI AO SHENG Xi aosheng El ect r oni c & Tel echn ol ogy CO . , LTD. Tel : 86- 021- 64859219 Fax: 86- 021- 64859219 www. on- el e. or g Em ai l : xi aosheng_sh@ 126. com Room 206 3r d bui l di ng 195- 16 Ti anl i n RD. Shanghai Chi na LH 03 Series of Products intercon vert: 2SK30A Silicon N-Chinnel Junction FET Package exam pl e: Electrical Characteristics (Ta=25℃) Prameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS V DS = 10V , VGS = 0V 0.3 6.5 mA Gate to Source leakage current IGSS V GS= -30V , VDS = 0V -1.0 nA Gate to Drain voltage V GDS I G = -100μA，VDS = 0V -50 V Gate to Source cut-off voltage V GS(OFF) V DS = 10V , ID = 0.1μA -0.4 -5.0 V Forward transfer admittamce | Y fs | V DS = 10V，VGS = 0V，f = 1KHZ 1.2 mS Input capacitance (Common Source) Ciss 8.2 pF Reverse transfer capacitance (Common Source) Crss VDS = 10V，VGS = 0V，f = 1MHZ 2.6 pF IDSS Rank Classification Runk R O Y G R Marking Symbol 035D 035E 035F 035G Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic switch. Package D S G SC-59 SOT-23 TO-92S * TO-92 3 1 2 TO-18 Sym bol : Gate Drain Source Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Gate to Drain voltage VGDO -50 V Gate to Source voltage VGSO -50 V Gate current IG 10 mA Allowable power dissipation PD 250 mW Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55 to +125 ℃