K3053

2SK3053 NEC | Alldatasheet

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© 1999, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark !!!! shows major revised points.

DESCRIPTION

The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.

FEATURES

• Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS(AC) ±20 V Gate to Source Voltage V GSS(DC) +20, −10 V Drain Current (DC) I D(DC) ±25 A Drain Current (Pulse) Note1 ID(pulse) ±75 A Total Power Dissipation (TC = 25°C) P T 30 W Total Power Dissipation (TA = 25°C) P T 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current Note2 IAS 12.5 A Single Avalanche Energy Note2 EAS 15.6 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V

ORDERING INFORMATION

(Isolated TO-220)

ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 13 A 28 45 m Ω RDS(on)2 VGS = 4.0 V, ID = 13 A 46 70 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 13 A 8.0 16 S Drain Leakage Current I DSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V 790 pF Output Capacitance C oss VGS = 0 V 240 pF Reverse Transfer Capacitance C rss f = 1 MHz 100 pF Turn-on Delay Time t d(on) ID = 13 A 20 ns Rise Time t r VGS = 10 V 200 ns Turn-off Delay Time t d(off) VDD = 30 V 65 ns Fall Time t f RG = 10 Ω 95 ns Total Gate Charge Q G ID = 25 A 20 nC Gate to Source Charge Q GS VDD = 48 V 3.0 nC Gate to Drain Charge Q GD VGS = 10 V 6.5 nC Body Diode Forward Voltage V F(S-D) IF = 25 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 25 A, VGS = 0 V 40 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs4 5 n C TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 % 10 %0 ID 90 % 90 % td(on) tr td(off) t f 10 % τ ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet D12912EJ3V0DS 3 2SK3053 TYPICAL CHARACTERISTICS (TA = 25 °C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - ˚C dT - Percentage of Rated Power - % 04 020 60 100 140 80 120 160 100 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 8020 40 60 100 140 120 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1 10 100 ID - Drain Current - A 0.1 VDS - Drain to Source Voltage - V 100 0.1 TC = 25˚C Single Pulse 1000 Power Dissipation Limited 100 µs 10 ms 100 ms 1 ms PW = 10 µsID(pulse) ID(DC)RDS(on) Limited (at V GS = 10 V) PW - Pulse Width - s TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single Pulse 10 100 R th(ch-C) = 4.17 ˚C/W µ µ R th(ch-A) = 62.5 ˚C/W

FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A Pulsed 0123 4 5 VDS = 10 V 0.1 100 1000 TA = −50˚C 25˚C 75˚C 150˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 00 2.0 3.0 4.0 100 1.0 Pulsed VGS =10 V 4.0 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S 0.1 1 100 10 100 0.1 Pulsed VDS = 10 V TA = 150˚C 75˚C 25˚C −50˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ 0 10 20 ID = 13 A Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 1010.1 100 Pulsed VGS = 4.0 V 10 V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(th) - Gate to Source Threshold Voltage - V 0.5 VDS = 10 V ID = 1 mA 1.0 1.5 2.0 −50 0 50 100 150

Data Sheet D12912EJ3V0DS 5 2SK3053 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 0 50 100 150 ID = 13 A 10 V VGS = 4.0 V Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 ISD - Diode Forward Current - A 0 1.5 VSD - Source to Drain Voltage - V 0.5 Pulsed 0.1 100 1000 VGS = 0 V VGS = 10 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz C oss C rss C iss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tf tr td(on) td(off) REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 V 0.1 1.0 10 100 1000 100 µ DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 00 841 2 2 0 2 8 16 24 32 VDD = 48 V 30 V 12 V V DS VGS ID = 25 A

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD L - Inductive Load - H IAS - Single Avalanche Current - A 100 1 m1 0 m VDD = 30 V VGS = 20 V → 0 V R G = 25 Ω Starting Tch = 25˚C 10µ 100µ 0.1 IAS = 12.5 A EAS = 15.6 mJ SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 25 50 75 100 160 140 120 100 125 150 VDD = 30 V R G = 25 Ω VGS = 20 V → 0 V IAS ≤ 12.5 A

Data Sheet D12912EJ3V0DS 7 2SK3053 PACKAGE DRAWING 10.0 ± 0.3 3.2 ± 0.2φ 4.5 ± 0.2 2.7 ± 0.2 2.5 ± 0.1 2.54 1.3 ± 0.2 2.54 0.7 ± 0.1 4 ± 0.2 15.0 ± 0.3 12.0 ± 0.2 3 ± 0.1 123 1.Gate 2.Drain 3.Source 13.5MIN. Isolated TO-220 (MP-45F) Remark 1. This product is designed for consumer application and isn’t suitable for automotive application. 2. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Body Diode Source (S) Drain (D) Gate (G) EQUIVALENT CIRCUIT Gate Protection Diode

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