K301 KODENSHI | Alldatasheet

Document overview

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Technical content

The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in a 8-pin mini-flat SMD package. The K304 has four channels in a 16-pin mini-flat SMD package.

FEATURES

  • Mini-flat Package
  • Collector-Emitter Voltage : Min.30V
  • Current Transfer Ratio : Type 600% (at IF=1mA, VCE=2V)
  • Electrical Isolation Voltage : AC3750Vrms

APPLICATIONS

  • Interface between two circuits of different potential
  • Automatic Vending Machine
  • Power Supply Regulators K301 • K302 • K304 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel.
  • Telephone Line Receiver K301 K302 K304 Orientation Mark 4.4 0.2 2.54 0.25 3.6 0.2 0.4 0.1 0.1 0.1 2.5 0.2 5.2 0.2 7.0 0.5 0.4Min. 0.15 0.05 4.4 0.22.5 0.2 8.7 0.2 Orientation Mark 0.15 0.05 0.4Min. 7.0 0.5 5.2 0.2 2.54 2.54 4.4 0.2 18.8 0.2 Orientation Mark 5.2 0.2 7.0 0.5 0.4Min. 2.5 0.2 0.1 0.1 2.54 2.54 0.15 0.05 DIMENSION (Unit : mm) 1 2 4 3 8 6 57 2 3 41 15 13 11 91416 12 10 432 65 7 8

MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V V=0, f=1KHz IC=0.5mA IE=0.1mA IF=0, VCE=10V VCE=0, f=1KHz IF=1mA, VCE=2V IF=1mA, IC=2mA V=0, f=1KHz VCE=10V, RL=100§Ù IC=10mA *4. CTR=(IC/IF) X 100 (%) PD 70 mW RH=40~60%, V=500V Coupled Rise Time Fall Time Condition tf CT BVCEO CTR VCE(SAT) BVECO ICEO CCE 10- - §Á Min. 300 100 Typ. 1.15 V K301 • K302 • K304 Parameter Lead Soldering Temperature*3 Tsol 260 ¡É 1.0 - §Ù 100- - §Á Max. 1.30 10 §Ë 100 Unit. pF Symbol V F IR pF V pF V V nA- 1500- tr IO 0.85 1011 CIO Current Transfer Ratio*4 Collector-Emitter Saturation Voltage Input Output Forward Voltage Capacitance Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Total Power Dissipation Ptot 250 mW Collector Dark Current Input-Output Isolation Resistance Input-Output Capacitance Capacitance Operating Temperature Topr -30~+85 ¡É Storage Temperature Tstg -55~+125 ¡É Input to Output Isolation Voltage*2 Viso AC3750 Vrms V V mA Collector Power Dissipation PC 150 mW Output Collector-Emitter Breakdown Voltage BVCEO 30 Emitter-Collector Breakdown Voltage BVECO 5 Collector Current IC 50 1 A 125 ¡É 50 mA 5 V Input Forward Current IF Reverse Voltage VR Peak Forward Current*1 IFP Junction Temperature TJ Power Dissipation Parameter Symbol Rating Unit

K301 • K302 • K304 Dark Current ICEO (uA) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf Collector Power Dissipation PC (mW) Collector Power Dissipation vs. Ambient Temperature 250 Ambient Temperature Ta (¡É ) 0-20 150 100 200 8060 100 VCE=10V -20 30Forward Current IF (mA) 0 20 40 60 10080 Forward Current vs. Ambient Temperature Ta=-55¡É Forward Voltage VF (V) 0.4 Forward Current IF (mA) 100 Ta=25¡É 0.8 1.2 Ta=70¡É Forward Current vs. Forward Voltage 1.6 Ta=25¡É Collector Current vs. Collector-Emitter Voltage Collector Current IC (mA) 108642 Collector-Emitter Voltage VCE (V) IF=1.5mA IF=1mA IF=2.5mA IF=2.0mA IF=3.0mA IF=3.5mA PC(max.) Collector Current vs. Forward Current 54321 Forward Current IF (mA) Collector Current IC (mA) Ta=25¡É VCE=2V Response Time tr, tf (us) 0.05 Load Resistance RL (§Ú) 0.20.1 0.5 1 2 VCE=10V IC=10mA Ta=25¡É 100 1000 5000 Response Time vs. Load Resistance tr tf