K3010P_12 VISHAY | Alldatasheet

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K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 1 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Optocoupler, Phototriac Output, Non-Zero Crossing, 250 VDRM

DESCRIPTION

The K3010P, K3010PG series consists of a photo-transistor optically coupled to a galliu m arsenide infrared-emitting diode in a 6-pin plastic dual inline package AGENCY APPROVALS

  • UL1577, file no. E52744 system code H, double protection
  • BSI: BS EN60065:2002 and IEC 60065:2001, certificate number 7955. An BS EN60950-1:2006 certificate number 7956
  • DIN EN 60747-5-5
  • CQC: GB8898-2001

FEATURES

  • Isolation materials according to UL 94 V-0
  • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection FT of 5 mA, 10 mA, and 15 mA
  • Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
  • Isolation test voltage, 5300 VRMS, t = 1 s
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

  • for appl. class I to IV at mains voltage ≤ 300 V
  • for appl. class I to IV at mains voltage ≤ 600 V according to DIN EN60747-5-5 (VDE0884), suitable for: - Monitors - Air conditioners - Line switches - Solid state relay - Microwave Note
  • G = leadform 10.16 mm; G is not marked on the body. MT2 MT1 NC A C NC i179041-2 DIP SMD

ORDERING INFORMATION

K3010P#X0## T PART NUMBER TRIGGER CURRENT BIN PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED/PACKAGE TRIGGER CURRENT, I FT VDE, cUL, BSI 5 mA 10 mA 15 mA DIP-6 K3012P K3011P K3010P DIP-6, 400 mil K3012PG K3011PG K3010PG SMD-6, option 7 K3012P-X007T - K3010P-X007T 10.16 mm7.62 mm DIP-6 G leadform > 0.7 mm Option 7

K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 2 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes

  • Stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054) Notes
  • Minimum and maximum values are testing requirements. Typical valu es are characteristics of the device and are the result of en gineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Test voltage must be applied within dV/dt ratings. (2) IFT is defined as a minimum trigger current. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 5V Forward current I F 80 mA Forward surge current t p ≤ 10 μs I FSM 3A Power dissipation P diss 100 mW Junction temperature T j 100 °C OUTPUT Off state output terminal voltage V DRM 250 V On state RMS current I TRM 100 mA Peak surge current, non-repetitive t p ≤ 10 ms I TMS 1.5 A Power dissipation P diss 300 mW Junction temperature T j 100 °C COUPLER Isolation test voltage (RMS) t = 1 s V ISO 5300 V RMS Total power dissipation P tot 350 mW Storage temperature range T stg - 55 to + 150 °C Ambient temperature range T amb - 55 to + 100 °C Soldering temperature (1) 2 mm from case, t ≤ 10 s T sld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 50 mA V F 1.25 1.6 V Junction capacitance V R = 0, f = 1 MHz C j 50 pF OUTPUT Forward peak off-state voltage (repetitive) I RDM = 100 nA V DRM (1) 250 V Peak on-state voltage I TM = 100 mA V TM 1.5 3 V Critical rate of rise of off-state voltage I FT = 0, IFT = 30 mA dV/dtcr 10 V/μs dV/dtcrq 0.1 0.2 V/μs COUPLER (2) Collector emitter trigger current V S = 3 V, RL = 150 Ω K3010P I FT 81 5 m A K3010PG I FT 81 5 m A K3011P I FT 51 0 m A K3011PG I FT 51 0 m A K3012P I FT 25 m A K3012PG I FT 25 m A Holding current I F = 10 mA, VS ≥ 3 V I H 100 μA

K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 3 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Test Circuit for dV/dtcr and dV/dtcrq Fig. 2 Fig. 3 - Motor Control Circuit R S 95 10813 Test condition: dV/dt cr VS = 2/3 VDRM (sine wave) R L = 33 kΩ dV/dt crq Veff. = 30 V (sine wave) R L = 2 kΩ IFT RL IF ≥ IFT 95 10814 dV/dt cr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the off state to the on state dV/dt crq Highest value of the “rate of rise of communicating voltage” which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from I FT to zero IF = 0 dV/dt crdV/dt crq M 95 10815 270 TT L + 5 V 0.1 µF VAC ~ Galvanic seperation

K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 4 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • According to DIN EN60747-5-5 (see figure 4). This optocoupler is suitable for sa fe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Fig. 4 - Safety Parameter Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to DIN EN60747-5-5/DIN EN60747-; IEC 60747 SAFETY AND INSULATION RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index CTI 175 Peak transient overvoltage V IOTM 8000 V peak Peak working insulation voltage V IORM 890 V peak Partial discharge test voltage (method a, Vpd = VIORM x 1.875) V pd 1669 V peak Isolation resistance at Tamb = 100 °C, VDC = 500 V R IO 1011 Ω Isolation resistance at Tamb = 25 °C, VDC = 500 V R IO 1012 Ω Safety rating - power P SO 265 mW Safety rating - input current I SI 130 mA Safety rating - temperature T SI 150 °C Clearance distance (Standard DIP-6) 7 mm Creepage distance (Standard DIP-6) 7 mm Clearance distance (400 mil DIP-6) 8 mm Creepage distance (400 mil DIP-6) 8 mm 100 150 200 250 300 0 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Psi (mW) Isi (mA) Max. Safety Ratings t 13930 t1, t2 = 1 s to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM Vpd VIOWM VIORM ttest tTr = 60 s tstres t3 t4

K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 5 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Fig. 8 - Relative Threshold Forward Current vs. Ambient Temperature Fig. 9 - Relative On-State vs. Ambient Temperature Fig. 10 - Off-State Current vs. Ambient Temperature Fig. 11 - Collector Current vs. Forward Current 100 200 300 400 Phototransistor IR-diode Coupled device 02 0 4 0 6 0 8 0 1 0 0 Tamb - Ambient Temperature (°C) P tot - Total Power Dissipation (mW) 9611701 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 10 0 20 30 40 50 60 70 8010 T amb - Ambient Temperature (°C)96 11922 VS = 3 V RL= 150 Ω I - Relative Threshold Forward CurrentFTrel 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30- 20 - 10 0 20 30 40 50 60 70 8010 T amb - Ambient Temperature (°C)96 11923 V - Relative On-State VoltageTMrel IF I FT IT = 100 mA 100 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)96 11924 VDR = 100 V IF = 0 I - Off-State Current (nA)DRM - 250 - 200 - 150 - 100 - 50 100 150 200 250 VTM - On-State Voltage (V) 96 11925 I - On-State Current (mA)TM IFT = 15 mA

K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 6 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS millimeters PACKAGE MARKING (example) Notes

  • The “G” of the 400 mil G leadform type is not marked on the body.
  • The VDE logo is only marked on option1 parts. i178004 0.25 typ. 2.95 ± 0.5 3.555 ± 0.255 0.8 min. 7.62 typ. 0.85 ± 0.05 2.54 typ. 1 min. 0.5 ± 0.05 6.4 ± 0.1 8.6 ± 0.1 Pin one ID 654 123 18° 3° to 9° 7.62 to 8.81 4° typ. ISO method A 1.2 ± 0.1 0.35 0.25 10.16 10.92 7.8 7.4 10.36 9.96 G Series 18450-12 Option 7 8 min. 7.62 typ. 4.3 ± 0.3 0.6 min. 10.3 max. 0.7 min. 2.54 R 0.25 1.78 0.76 1.528 min. 11.05 K3010P V YWW H 68

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