2SK2995 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
15.8205 , 93.6402 35 ¢ Low Drain-Source ON Resistance : Rpg (ON)=48m00 (Typ.) 3 ale = 2 2 © High Forward Transfer Admittance : |Yg|=30S (Typ.) “| | b | 1" : = = Vt Wy T ¢ Low Leakage Current : Ipgg=100A (Vpg=250V) 20 i | 5 @ Enhancement-Mode =: Vjh=1.5~3.5V (Vpg=10V, Ip=1mA) wot 838 q ) qt 5.4520.2 5.45202 MAXIMUM RATINGS (Ta = 25°C) 3 15233 CHARACTERISTIC SYMBOL | RATING | UNIT F ; Drain-Source Voltage Vpss_ | _ 250 [| V_ | ay Drain-Gate Voltage (RGg= 20k) VDGR 1. GATE Gate-Source Voltage Vass 2. DRAIN 3 Drain Current c [ t_| [Puke | tpp | 120 |_A_ gu = Drain Power Dissipation (Te=25°C) [Pp | 9 | w | Single Pulse Avalanche Energy** — Avalanche Current [tan | _90|_a | [TOstBA_2-16F18 Repetitive Avalanche Energy* [| Far | _9 | mJ | Weight : 5.8g (Typ.) Channel Temperature Storage Temperature Range =55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL ‘Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=50V, Starting Toh =25°C, L=1.74mH, IAR=30A, RG=250 This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ xan. | rye. Jax. [unr] Gate Leakage Current Igss Vas=+t16V, Vpg=0V | — [| — | +10] pA | Drain Cut-off Current Ipss Vps=250V, Vag=0V | — [| — [| 100] pA | Drain-Source Breakdown Voltage V (BR) DSS|ID=10mA, V@g=0V je |-|- |v | Gate Threshold Voltage Vps=10V, Ip=15A [15 | — [| 35] Vv | Drain-Source ON Resistance | RDS (ON) | VGS=10V, Ip=15A [| — | 48] 08] mo | Forward Transfer Tnput Capacitance = [500] Reverse Transfer Vps=10V, Vgs=0V Capacitance Crss [pit 580 F Output Capacitance [= _[is00, —_| Ves ‘Ww Nl Vout Tw Ti ov 50 in-on Time t = Switching on S RL= Ti 6c 6.70, ns ‘ime . Vpp=100V . VIN : tr, t#<5ns, Turn-off Time | tofr Duty <1%, ty =10ps 200 Total Gate Charge (Gate- i Qs 2 132 Source Plus Gate-Drain) Vpp=200V, Vgg=10V c Gate Source Charge [Qs |1p=30a [=| sf =] ™ Gate-Drain (“Miller”) Charge [ — | 52] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION A Current Pulse Drain Reverse Gumrent | Ipgp |__| — | — | m0 A Diode Forward Voltage VpsF_|IpR=30A, Vgg=0V [| — | — [-20][ Vv | IpR=30A, Vag=0V L— [270 | — [as | Reverse Recovery Charge dip /dt=100A/ us [= 30 T= foc] MARKING TOSHIBA > Lot Number K2995-1— TYPE . ao Month (Starting from Alphabet A) QU Year (Last Number of the Christian Era) 1998-11-12 2/5
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a 1 HS SE CHANNEL TEMPERATURE Teh (°C) _—— sl | 0.5] 3% SINGLE NONREPETITIVE FHI SE 03] curves mast be deratedlineaety [fH —T}-H] Bypss Caves mut be itt a Capers No wa || |] ev tar on 3.5 10 30 50 100 300 500 _asv fl | NN DRAIN-SOURCE VOLTAGE Vpg (V) i Yop / 7 / \\{__ Vps 4 \\ TEST CIRCUIT WAVE FORM Peak IAR=30A, RG=250 1 oy. -—Bwpss vop=etv, i ee ie ©: GBypss-Vpp)