2SK2952 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPCATIONS nit in mm CHOPPER REGULATOR APPLICATIONS totos , $3282 27402 ar za © Low Drain-Source ON Resistance: Rpg (QN)=0.422 (Typ.) Ea ot al @ High Forward Transfer Admittance : |Y¢s|=8.0S (Typ.) a 7 E © Low Leakage Current : Ipgg=100A (Max.) 4 Et (Vpg=400V) ee z | @ = Enhancement-Mode 07540 i: | H 2 | : Vth=2.0~4.0V y l MAXIMUM RATINGS (Ta = 25°C) EE 5 CHARACTERISTIC SYMBOL UNIT . . re) Drain-Source Voltage Vpss | 400 | V || 2 Shain 3 Drain-Gate Voltage (Rgg=20k9)| Vpcr | 400 | V_ | 3. SOURCE Gate-Souree Voltage Vass ued [pep 8s Drain Current De D EIAJ SC-67 | Pulse | Ipp | 34 | A | Vogama 210RIB Drain Power Dissipation (Te=25°C) | Pp | 40 | _w_| 20S -10 Single Pulse Avalanche Energy** Weight : 1.9g (Typ.) Avalanche Current Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case 3.125) Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Toh =25°C, L=9.6mH, RG=250, IAR=8.5A This transistor is an electrostatic sensitive device. Please handle with caution. 261001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction gr fal due to their inherent electrical senstvity and vulnerability to physical tess. t's the responsibility of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL TEST CONDITION Gate Leakage Current Igss__ | Vas=+25V, Vps=0V. | — | — | +10] yA | Gate-Source iene Paweafersion vr fo] | — Lv Drain Cut-Off Current | Ipsg__| Vps=400V, Veg=0V b= p= | 100 ea | Drain-Source Gate Threshold Voltage | _Vyq__| Vp§=10V, Ip=ImA Daop— | 40, v_| Drain-Source ON Resistance | RDS (QN) | VGg=10V, Ip=5A [ — | 04] 055[ 0 | Forward Transfer Admittance sl [Vps=10V, 1D=5A [sof sof — | 8 | Taput Capacitance = asa Reverse Transfer voein.tognere [= [ve] = | Output Capacitance [= | xo, — | wp, 2a | = | | - | VGS oy. Vout - i RL= Switching Ss 400 |= | | - | Time 10 Fall Time tf Vpp=200V VIN : tr, tp<5ns, Turn-Off Time | toff Duty <1%, ty =10ys 140 Total Gate Charge (Gate- Q 34 Source Plus Gate-Drain) i Vpp=320V, Vgg=10V, Gate-Source Charge [Qs _|p=85a [=| P= | 7° Gate-Drain (“Miller”) Charge | — | 16] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION foam | oe | = | =] ol | A Current Diode Forward Voltage VpsF_ |Ipr=8.5A, Vgg=0V [| — | — [-17] Vv] TpR=85A, Vag=0V = [350 — [as _| Reverse Recovery Charge dIpr/dt=100A / us | — [| 26 | — | xc | MARKING ra * Lot Number K2952 TYPE . Oo Month (Starting from Alphabet A) UU Year (Last Number of the Christian Era) 1998-11-12 2/5
10 Ip - Vps 20 Ip - Vps
e J yi tt Ss | Wee st g LL fee F | (re fe | je) ARGeeee ee ee ee 2 - fe a 2 OTP Pere 2 | fea 2 ji Pt tt Tas | F- Jp ee a SA | ae ee DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V)
2 Ip - Vos 10 Vps — VGs
3 a : So 2 Z s ptt TT a TTT a8 J MM | Tt g bf bff | | ee s , ti 1 1 Hts} a ee oe 2 ||| let Tt en ee a $f pee J IN | Tt | fe | A) /Ao i A GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) l¥ts| — ID Rps(ON) - ID 8 5 | — [eouwon source || | FTI 1] orm FTTH meses DLT 2, Eat Sea eS Ut BCU er Sz He} Vesey | & J eee ge oft ttt —t Hi © ga foo PA) ee setae — = || A OL 03° 0.5 1 3 5 10 30 05 1 3 5 10 30 «50 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) —_ww—— HIT
RDS(ON) — Te +50 IpR — VDS 2.5) . eee: Jeena Be PEt eee ee yy yt e/a SPeRRBEEP~ 0060 = 27 45 aoaee 2 “UC eeerT TT 3g” At fp 2 a WY! 1 CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) Pe RSEETiSSSati eseeni s | — eS 2 EEE Vos=10¥ 2 wo ES Oe ae <8 5 i So AMIMM TTT Nec eg fit Pew 100 FA aM pamaauimmg=sii asa ge Hee & | common source FEE HHH e pitt tt ttt tt | myer’ ECT SS caal e TEPPPe ery ol Te=25C LETT LE th a 01 0305 1 3.5 #10 30 50 100 80 40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) 80 - 500 COMMON SOURCE 20 ‘oo |. Se. fF “TNCEEELEL a yoo | | 11 i|* S : eRe, s a ee ee e*OODOIN ELE) OE EDO 2 Be POET P Ne ot RCC, 3 2g Ei TTT i Atte 2 AWE TTT Ty & s Litt i {Xt i | (XE, CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Q (nC) 1998-11-12 4/5
Tth — t 3 3 Coco oo ea A Es aoe | | 25 08 DoS siiieee Seen ml 3 eT a2 ooaf002 LL erat ti t.
83 Fea ST tit Till D
0.008 Ren choy 21250/W
PULSE WIDTH tw (s) SAFE OPERATING AREA Eas — Tch 100 00 SSS - ~-LLTTITITLti ti bo ee ee el pe ee LATENT a NCTE ETT voi connwous [NUT Noor? zo NEP TET ET a s Ne . CNET ON THI Be LIL ENTELITL a oe tl elle ee
29 Co Ny a a
a Sl CHANNEL TEMPERATURE Toy ©) oa LN SINGLE Nonreperitive Hif—}—H HHH emote — fit HHH Doss oor 3 10 30 100 300 1000 —15V / \\ DRAIN-SOURCE VOLTAGE Vpg (V) 4 Vpp /’ \\ Vps / \\ TEST CIRCUIT WAVE FORM Peak IAR=8.5A, RG=252 =1 yp. —Bvpss_ Vpp=a0v, L=9.6mH Eas= 37h ‘“Bypss-Vop) a 7