K2915

2SK2915 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm

APPLICATIONS

15.9MAX. 03.220.2 2g A 2 3] © Low Drain-Sorce ON Resistance —_: ROS (ON) =0.310 (Typ.) TN I © High Forward Transfer Admittance : [Y4|=15S (Typ.) Es b EEL © Low Leakage Current : Ipgg=100/A (Max.) (Vpg=600V) “on @ Enhancement-Mode : Vth=2.0~4.0V (Vpg=10V, Ip=1mA) 2.0203 | | Ff +03 3 MAXIMUM RATINGS (Ta = 25°C) wey | 5.45£0.2 5asz02 CHARACTERISTIC SYMBOL | RATING | UNIT |} J - | | | Drain-Source Voltage Vpss_[ 600 [| V_ | i a4 3 2 Drain-Gate Voltage (RGg= 20k) Vpcr | 600 | V |} "= 3 Gate-Source Voltage Vass 1. GATE 5 Drain Current c D A 3. SOURCE [Pulse [ip |__| Drain Power Dissipation (Te=25°C) | Pp | 150. |S Wi JUEDEC = Single Pulse Avalanche Energy** 1026 EIAJ SC-65 Avalanche Current TOSHIBA 2-16C1B Repetitive Avalanche Eneray® Weight ; 465 (Typ) Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case [ Rth (ch-c) | 0.833 [°C/W] Thermal Resistance, Channel to Ambient Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Toy =25°C, L=7.01mH, Rg=250, IAR=16A This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rve. max. [unr] Gate Leakage Current Igss _|Vas=+25V, Vpg=0V | — | — [+10 | pA | Gate-Source Breakdown eee Kanoersm new fom] —|— [| Drain Cut-off Current | Ipss__| Vps=600V, Vgg=0V [| — | — | 100 [ pA | Drain-Source Breakdown Pee Fe enrom veer [ow [= [| » | Gate Threshold Voltage Vps=10V, Ip=1mA [ 20[ — | 40[ Vv | Drain-Source ON Resistance [RDS(ON) |VGS=10V, Ip=8.0A | — [031] 04] © | Forward Transfer Admittance [Ygsl | Vpg=10V, Ip=8.0A | 80[150/ — | Ss | Tnput Capacitance [ — [3520] —_| Reverse Transfer Capacitance Vps=25V, Vgg=0V, f=1MHz [| — | 20] — | pF Output Capacitance [= [300 | —| «om Ip=8.0A VGS oy fl Turn-on Time t = Switching oe oe g RLS 50 | = | | - | Time 10) : Fall Time te Vpp=300V . VIN : tr, tp<5ns, Turn-off Time toff Duty £1%, tw=10us 325 Total Gate Charge (Gate- Q Source Plus Gate-Drain) 8 Vpp=400V, Vgg=10V, c Gate-Source Charge [Ge |tp=16a [=TaeT—]" Gate-Drain (“Miller”) Charge | _Qga _| C= ps] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION cure |e | |=] Current Diode Forward Voltage VpsF_ |IpR=16A, Vag=0V [| — | — [-17][ v_ | IpR=16A, VGg=0V = [6x0 | — [as] Reverse Recovery Charge dlpR/at=100A / ys r— [ml — [zc | MARKING TOSHIBA > Lot Number K2915-+— TYPE . ao Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) 1998-11-12 2/5

10 Ip - Vps 20 Ip - Vos

common Lh = [fee] roman snc 2 ewe A 02 a (HAGE ye. g Y/ as 5 Sa 8 f (7a | fee Z pj tT te | 2 Yo i bAeee ree! 9 EEE | foo | rr ar WET i tit i tt | 2 0 1 2 3 4 5 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V)

60 Ip - Vas 12 Vps - VGs

fem; Ae 2 | rae Fe | e g TTT eT TT > atti ty yy a eee g ~-L} EWE? Ty ttt | pe g Ht 2 Pte pe | EESS 3 / 3 | d oA 2 COCCI ee | | || pAtt ti tt 2 [|] VEE pea Fe GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) [Yes -— ID Rps (ON) ~ ID ZS emerged gee 88 é WA E (NN oo 2 of Afro I a CSS SSS ee eal Boe go ee eet PLA ee 9 (4S SS See ; PY os ee eee eel z lll a | 8 oxp © aL-LTTTIE TEI TET 0s a EHH ti 005 138 19 80 BO 100 , ts 3 ooo DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) TT S«*C“NB-T I-12 35

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2 FERC E ee innit

lA =EEnEEE = | es EAH A, § ecu comm [| | Ip=16 LZ 5 | | au) mun {ttt [| =10V r || iD YY a PA Sas a | 8 ol vos Ss Je g EAA He F lf g os Se [| 5 VE TE | 2 [| || fo [| ial os FA ) ri i 5 die] be [| : iy i i g i A | yy : Ze peseeersetit at ; 5g | } Ba Poo =ae8 - Ee “TT LF Ib AH = 5 [| | | re t = : z “Heer 40 cc) _ at - Fi itt = | ~ ; : g L| <a ERATUI _ : : an TEMP! A FA = : = Be CASE a : FH : CE —— 4 | a i : : sii arciati : ca i e Sst ee : : ~ : :. pst Se St poe] 300 a HN SS : : a « senee HEE : a pei Ean t: FE : ° Asch aia a if : | = ee c IC INPI RISTIC! Ty] i eel ounce nian came - | 8 | comMon ——— i] : : . | . | = Va: y) a 10 new 05 1 CE VOLTAGE Vp; = = et | in N-SOUR “ = 7 3 bra Sooo z Hat — =o Pp [| = : : ae _| eA Tri a | FH ; eet = | : e [TI AH 2 ACE e | H+-H aa 2 AEE HH P| C_ 2 A : 3 «FENCE — a ff z VIN XY — - | <I co | TN | A ENS | 160 = | 8-11-12 - ° [PERATUI : 7 CASE TEMI

Tth — t “So ooo ooo ooo :, CL £2 03 [oo ne a ieee eset ati ee ese ool gg 0 paced ve reves To emf PLL. ce ooo —LLU[ME TATE TTI TTT #cno-osseerw 10; 100 im 10m 100m T 10 PULSE WIDTH tw (s) SAFE OPERATING AREA EAS - Teh 100) Sees eee] 2000, FIp MAX, PULSE x a | A ce ~ 30) < <t 1600] [Bi | |i Ps a FSS NSS NSS 8 SS SS ae 3 3 el anil 2 ANCE e AN 2 "NOT LLL ee SE gf CPST z os— Et TiN 0 —— 3 | 25 50 5 100 125150 a on 3% SINGLE CHAE ELEM CHANNEL TEMPERATURE Teh (°C) 08] nearly with inerease in TTIIIT LLU av ‘ener [vos |] fl 7 0.01.40 30100300 1000 —15V | YW DRAIN-SOURCE VOLTAGE Vpg (V) 4 Vpp /’ \\ Vps 4 \\ TEST CIRCUIT WAVE FORM Peak IAR=16A, RG=250 1p. —Bypss_ Vpp=30v, L=7.01mH Eas=9 -L -T- (Gipss—vpp) TT «*O“NB-T I-12 O55