2SK2842 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (7-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS : ——— 2 VY 2) | © Low Drain-Source ON Resistance : RDG (ON) = 0.4 2 (Typ.) a HSE e@ High Forward Transfer Admittance : [Yf.| = 9.0S (Typ.) Fe Ha ~ © Low Leakage Current : Ipgg = 100 A (Max.) (Vpg = 500 V) wT. : I e@ Enhancement-Mode : Vth = 2.0~4.0V é | (Vpg = 10V, Ip = 1mA) o75s013F Tl | ~ MAXIMUM RATINGS (Ta = 25°C) 2,540.25 2540.25 CHARACTERISTIC SYMBOL | RATING ne iE efi 2 3] a Drain-Source Voltage Vpss S ‘|, 2 Drain-Gate Voltage (Rgg = 20k) | Vpcr | 500 | V_ | 1. GATE Gate-Source Voltage Voss 2. DRAIN 3 Drain Current a Drain Power Dissipation ate = 25°) | p__| 40 | Ww _| EIAJ SC-67 [Single Pulse Avalanche Energy** | Fag | 364 | mJ |Toogmpa 2a0rip | Avalanche Current [tar [12 [a _| POSHBA zone Repetitive Avalanche Energy* [ Ear | 40 | mJ | Weight: 19¢ (Typ.) Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case 3.125 Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp = 90V, Starting Toh = 25°C, L = 4.3 mH, Rg = 250, IAR = 12A This transistor is an electrostatic sensitive device. Please handle with caution. 261001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can matfuncion or fai due to thei inherent electrical sensRvity and wulnerabiity to physica stress. isthe responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to’ property. In. developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1999-06-24 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC —_| SYMBOL TEST CONDITION san. | rye. [max.|unrr] Gate Leakage Current Vas = 225V, Vos=0V | — | — | 200] ok | Gate-Source Breakdown eee Fnoafossenne-ov fol [|| Drain Cut-off Current Ipss Vps = 500 V, Vag = 0V [| — | — | 100] pA | Drain-Source Breakdown fee Fomaalnwanser-ev [| —[- [| Gate Threshold Voltage Vps = 10V, Ip =1mA [ 20[/ — | 40] v | Drain-Source ON Resistance | Rps(ON) | VGS = 10 V, ID =6A [| — | o4] 052] 9 | Forward Transfer _ _ Tnput Capacitance [= | 20a] —] Reverse Transfer Cc Vps = 10 V, Veg = OV, F Capacitance TSS f=1MHz P Output Capacitance [= eo | me Ip=6A wn ee | VGs yy Jl ece Switching gs = 330 aac Sce Vpp = 200 V ; VIN : ty, te < 5ns, Turn-off Time toff Duty = 1%, tw = 10 ps 180 Total Gate Charge (Gate- Q 45 Source Plus Gate-Drain) i Vpp = 400 V, Vgg = 10V, c Gate-Source Charge Ip=12A [=p] Gate-Drain (“Miller”) Charge | — | 20] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION rae fm | |] fe Current Diode Forward Voltage Vosr_ |Ipr = 12A, Vag =0V | — | — [-17] v | IpR=12A, Vag =0V [= [4200 — as _| Reverse Recovery Charge dlp /dt = 100 A/ ys r— fi] — [2c | MARKING ra % Lot Number K2842 TYPE . ao Month (Starting from Alphabet A) NOY Year (Last Number of the Christian Era) 1999-06-24 2/5
1, Ip - Vps ou Ip - Vps comMON | 104 YF =2{ TT 1] [ | to Ys Ft COMMON 10] SOURCE . Zane Pe 2 jo a 2 eo —-§llywmi litt eee a 2 > LT TY TTT ty tt 7 Pf [fed TT TT | 3 any Aa 7.) ane eee 8 ae) eee 2 |piefres tT Tt | 3s | fT are 242 ee eee
2 CPSC ; JSS
Zo a |p pest yy A Se Yo ttt | tvcs=sv | | CELE | SESE EEE 0 2 4 6 8 10 12 0 10 20 30 40 50 60 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V)
4 Ip - Vas 12 Vps — Vas
ee ee es ELM TL 7 I J common oT footer a | e [LEPETT TT fT is= 2 Ll MT Ty ty o «ttt tie tt tt fT ee ee (0 = EEE) WPT tT ty yy g [iM Te tt yt yy | eee ee ee | 2 [] TIT yy tt Soa | ee 8 +++} ++ Z ee eeent || Coo] en (se cess) \\eeeeee 2 COS eee oe LA tit i ti ott tt | ti tit | | a a rr a a | GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) +0 [Yesl — ID 0 Rps(ON) ~ ID z Vs = 20 Lime Bn Z Tes 26 A Bf SOS ee 2 oo
2 Ee Sai @e [LUM Ti
= || a2 eee ee PCAC eee ge wo ee § ee a Ceci i FJ on 01 0.3 1 3 10 30 01 0.3 1 3 10 30 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) 7999-06-24 3/5
25 Rps (On) — Te 50, fpr — Vps__
. (ee AA SC: ee ES SF go Vas=10V fi] tty ty E rewe TTT | A | | | e fii ite dite de —_==—====- ==== gt ttt TT TT g see ee LL P| eeeeee/ oe se f tit tt tt ee! a Le ef || |
5 Sanne aan EES
z | Q 05) LA FP g “eet E SO tia titi ts tt B WZ vos Pol Tt TT -80 -40 0 40 80 120 160 0 -0.2 -04 -0.6 -0.8 -10 -12 CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) sono CAPACITANCE - Vpg ss Vth - Te & woo eT TTT | TTT s ‘(COlOCeooe ~ SS SEH < z gi), sa a [~~ <a bo UWI Ts) EEE sa) common EEE HIER E z EEE EEE © 30 fOuRCE HEL Fee | 2 1 Yessov i ot = LETT ETT eae [CTT TTT LEE P iret tty | 0.1 0305 1 3 5 «10 30 50 100 -80. 40 0 40 80 120. 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) “COE sgn HBTS _ COMMON . ae a OO © wojpea TPP t ttt, & es oy g Mesa TT TTT 2 r AXE © tL CELE eee, = € gg | IN | ett tt | gc eteidoe 8 2 “COP NEE Bp eo. | ie 2 PE rol 5
2 T)PDINDLLLL 2 oo | | | |e iM |, g
s ptt ti tT iN | ty | 2 | pbreerr errr 2? 2 "COPOEE NEE) a DARE OE ee a (ZS EEE, 0 40 80 120 160 200 0 10 20 30 40 50 60 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC) 1999-06-24 4/5
Tth — t 3 3 Coco ooo Fee SE 52 oal—oo HH HE Se ao at atl 22 (At eso | t 83 ie, 1 E rT r T fee SS Se ee ees Dr =t/T 00 a 7 70 PULSE WIDTH ty (s)
100 SAFE OPERATING AREA EAS - Tch
sok tH 2 yi | | | | | tt tT | cuit NONE | Pes a , SSeS SSS a ===. —— SEH 2 af FN oom NN ee e 3} ER AA ia 200) NS
2 ConA 2“ TINE ET
: bocormnor Qt goof LL ESET TTT 2 ee oe SINGLE Hn Sa a a NONREPETITIVE UTI NI CHANNEL TEMPERATURE Teh (C) Curves must be derated EEE HFFA o1as| nese wit eres gs MAX. FH in temperature, Fs Max. | atl Bvpss 008 3 10 30 100 300 1000 DRAIN-SOURCE VOLTAGE Vpg (V) 1bV fl TAR n -15V | “4
4 Vpp /’ \\ Vps
/ \\ TEST CIRCUIT WAVE FORM Peak IAR = 12A, Rg = 252 a1 ___Bvpss__ VoD oAby, care an Eas = gL Giypgs - Vop 1999-06-24 5/5