K2837

K2837 THINKISEMI | Alldatasheet

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Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V DSS 500 V Drain−gate voltage (R GS = 20 kΩ) V DGR 500 V Gate−source voltage V GSS ±30 V DC (Note 1) I D 20 A Drain current Pulse (Note 1) I DP 80 A Drain power dissipation (Tc = 25°C) P D 150 W Single pulse avalanche energy (Note 2) E AS 960 mJ Avalanche current I AR 20 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 0.833 °C / W Thermal resistance, channel to ambient R th (ch−a) 50 °C / W

http://www.thinkisemi.com.tw/ Page 2/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd.

Electrical Characteristics

(Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cut−off current I DSS V DS = 500 V, V GS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 500 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain−source ON resistance R DS (ON) V GS = 10 V, I D = 10 A — 0.21 0.27 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 10 A 10 17 — S Input capacitance C iss — 3720 — Reverse transfer capacitance C rss — 340 — Output capacitance C oss V DS = 10 V, V GS = 0 V, f = 1 MHz — 1165 — pF Rise time t r — 30 — Turn−on time t on — 70 — Fall time t f — 50 — Switching time Turn−off time t off — 290 — ns Total gate charge (gate−source plus gate−drain) Q g — 80 — Gate−source charge Q gs — 48 — Gate−drain (“miller”) Charge Q gd V DD ≈ 400 V, V GS = 10 V, I D = 6 A — 32 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR — — — 20 A Pulse drain reverse current (Note 1) I DRP — — — 80 A Forward voltage (diode) V DSF I DR = 20 A, V GS = 0 V — — −1.7 V Reverse recovery time t rr — 540 — ns Reverse recovery charge Q rr I DR = 20 A, V GS = 0 V dI DR / dt = 100 A / μs — 5.4 — μC Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 4.08 mH, R G = 25 Ω, I AR = 20 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. K2837

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http://www.thinkisemi.com.tw/ Page 4/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K2837

http://www.thinkisemi.com.tw/ Page 5/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. −⋅ ⋅ ⋅ = DDVDSS VDSSAS VB BI L2 R G = 25 Ω V DD = 90 V, L = 4.08 mH K2837

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 6/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K2837