K2750 | DigiCamel IC Datasheet

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2SK2750 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm

APPLICATIONS

loto3a $32402 27202 ea © Low Drain-Source ON Resistance: Rpg (QN)=1.702 (Typ.) ag —— Fe e@ High Forward Transfer Admittance : |Yfs|=3.0S (Typ.) 2 | | | 2 © Low Leakage Current : Ipgg=100/A (Max.) (Vpg=600V) “ IMAI aa e Enhancement-Mode : Vth=2.0~4.0V (Vpg=10V, Ip=1mA) | i 2 Hi MAXIMUM RATINGS (Ta = 25°C) \\ 4 2544025, 2540.25 CHARACTERISTIC SYMBOL 7 Drain-Source Voltage Vpss_ | 600 | V_ | | [ie Drain-Gate Voltage (RGg= 20k) Vpcr | 600 | Vv || § 3 g Gate-Source Voltage Vass CB) i 2. DRAIN 2 Drain Power Dissipation (Te=25°) | Pp [85 | _WIIgupac = [Single Pulse Avalanche Energy** | Eas [201 | mJ_| Single Pulse Avalanche Energy’ Eas 201 mJ EIAJ SC-67 Repetitive Avalanche Energy* TOSHIBA __2-10R1B [Channel Temperature | Te, | 150 | _°C_| Weight : 19 Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tp) =25°C, L=28.8mH, RG=250, TIAR=3.5A This transistor is an electrostatic sensitive device. Please handle with caution. 961001E4A2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can maltunction or ‘all due to their inherent electrical Sensivty and vulnerability to physical stress. It is the responsibilty of the buyer, when lizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of @ TOSHIBA product could cause lost of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein 's presented only as 2 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHanacrenisnic | syMBou | TEST CONDITION Gate Leakage Current Igss__ | Vas= #25V, Vpg=0V | — | — | +10] xa | Gate-Source Breakdown Voltage ¥ (BR) GS8/1a= +1044, Vps=OV js | - [=| v | Drain Cutoff Current | Ipss_[Vps=600V, Vas=0v [ = | = | 100 | a | Drain-Source Breakdown enamel Dss| 1D= 10mA, Vos=0v jom | = [=| v | Gate Threshold Voltage Vpg=10V, Ip=1mA [20] — | 40] v | Drain-Source ON Resistance |RDS(ON) | VGS=10V, Ip=1.8A [| — | 17] 22] 9 | Forward Transfer Pee Ypg=10V, 1o=18A | 20 | s0/ = | | Input Capacitance | — | soo] — | Reverse Transfer =2! = f=1MH: F VDs=25V, Vas=0V, ° =| [=| P oad oe |= | | -| VGsS oy al VouT Turn-on Time t RL= 50 Switching ne ee 3 {110 |= | | - | . 1%» ns Time Pell hime BES Vpp=200V . VIN : ty, t¢<5ns, Turn-off Time | _ to¢p Duty =1%, tw=10us 85 Total Gate Charge (Gate- Q Source Plus Gate-Drain) 8 Vpp=400V, Vgg=10V, © Gate-Source Charge [Qs |tp=3.5a | — [| w{— |" Gate-Drain (“Miller”) Charge [= | w] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cHanacrenismic | svaor | TEST CONDITION Current Pulse Drain Reverse Current | Ipgp |__| = |= | ™| a | Diode Forward Voltage Vpsr_|Ipr=3.5A, Vag=0V | — | — [-17| v | Reverse Recovery Time IprR=3.5A, VGg=0V | — | 400] — | ns | MARKING ya % Lot Number k2750~)— TYPE [LL Month (Starting from Alphabet A) u CUU Year (Last Number of the Christian Era) 1998-11-12 2/5

20 Ip - Vps , 5 Ip - Vps

4 Ip - Vos 20 Vps — Vas

COMMON s _LIM_LTT TT coms SOURCE efter TT bee Tg HE ett | fei | on | < 2]

5 JEEP Ey | 3 , Poe bE

B ||] fol | yt gs SEEEeRe e | LWP 2 |] ]JMePP Perey | e/a en eee / ie er LLEILA | tt A 0 2 4 6 8 10 0 4 8 12 16 20 24 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) l¥ts| - ID Rps(on) — Ip Bag common +--+ + ++ 4 2 source 9 [bbb source. bbe g vos=20v_ FHT ao eo oe err 2 Teese | eo 2 5 PTT fe: CTT 2 5 Py rr rrr E Scent a ee fe eal a

2 Libero) = LOLI

10 Rps (ON) ~ Te +0 IpR - VDs

PEPE EE] seems | a frome pes ee go, 4 Pe a e/a EE CO os 2B 4 Pid Z Boe PEEP ae gay g 2 an = os ZF os=0- Litt Ti tits ty | etter ie TT *s9 9 0 40302060 0 ‘0a 0a 08 08a) A2 CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth — Te 8000 s 5 oi § HEE Hee (a . eco 300) — S —~_

2 STS e Jt PPA Tt TT

3 sg — 3 LOPS

8 SSS e ToL PL

=F coxmon Ca Te BER Jee Ie Eee gL ee? FREE FY ° ottttTi ti tt ii | 1 3 5 10 30 «50 100 -80 40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) Pp —- Te 50) es ~LTT TTT TT 7 aot tit ttt tt ee ee eo INI ET TT TT A Nee 2 4 || NTT tt e [iT |] NT TT Ty s jit} | APT oN a Lit tit? | NIT I 0 40 80 120 160 200 CASE TEMPERATURE Te (°C) 1998-11-12 4/5

Tth — tw 3. LO TT Md weamemnc si asi Sees SSeS SS meal BS os ee ee em — ee EE es Tot ee ge os etl Sato

23 LU ee IIT VT

ee SSS i ees cE | J a2 0.03 [oo Set ot 3 & ° et ovate rose HHH rll to Ee cil career || ey Duty=t/7 2 005, =o A SESH pay cneyeasrrc/w 0.003 aE (as a Ca CT 7 0 sy 100 im im im PULSE WIDTH tw (s) SAFE OPERATING AREA Eas - Tch 100 240) 30) I\\ pomax.eviseox OH eal 2 (NCEP PPP Sa cee 0 eee Sea ees eee, @ \\ 3 ‘paar NN 2 NEEL s Lom Nct Nh 2 ad Pe NDE | E | Locormeanon Ili | NII re 8 == Te=28°C is Cent eee Ba] Ss 4 a eS 2 os Se oN = - nr fd tt i {| | | me) S08 ITT 25 50 % 100 126 150 | UTNE PTT NTT CHARNEL TEMPERATURE, Tay CO bd SS

3 SINGLE NONREPETITIVE = +S

0.05] PULSE Te=26°C aes B oa] curses matte dees FH ‘VDSS. linearly with increase in Vpgs MAX. TAR son L_mmratur. Lil 15V fl yh LT 3 10 30 100 300 1000 -15V Y \\ DRAIN-SOURCE VOLTAGE Vps (V) 4 Vpp /’ \\| vps / \\ TEST CIRCUIT WAVE FORM Peak IAR=3.5A, RG=250 y,c-1 yy, -—_BVDSS_ Vpp=90V, L=28.8mH AS “Bypss—Vpb? OO 1998-11-12 5/5

Product Information

K2750 specifications and overview.

Summary

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Description

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Source title K2750 Datasheet(PDF) - Toshiba Semiconductor

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