K2749

2SK2749 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm

APPLICATIONS

15.9MAx, 3.240.2 2g A 21 3 @ Low Drain-Source ON Resistance : RDS (ON)=1.62 (Typ.) (/ aN ol . . . _ x 1 3 © High Forward Transfer Admittance : [Yfs|=5.0S (Typ.) a? i qe @ Low Leakage Current : Ipgg=100A (Max.) (Vpg=720V) co i U ¢ = Enhancement-Mode —: Vth=2.0~4.0V (Vpg=10V, Ip=1mA) 2.0203, H $ +03 3 MAXIMUM RATINGS (Ta = 25°C) 10-028 “ 5.4520.2 5.4540.2 CHARACTERISTIC SYMBOL UNIT sles Hi 33 el Drain-Source Voltage Vpss_[| 900 | V_ | i *e S43 2 Drain-Gate Voltage (Rqg=20k® | Vpgr_|_900| V_|| “= =2-33 \\ Gate-Source Voltage Vass 1. are : ; 2. DRAIN (HEAT SINK) Drain Power Dissipation(Te=25°C) | Pp | —'150—s|_~W__||JEDEC i Single Pulse Avalanche Energy"™ BIAS 50.65 Avalanche Current TOSHIBA .16018 Repetitive Avalanche Energy* - Channel Temperature Weight : 4.68 Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case 0.833 Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tph=25°C, L=25.5mH, IqR=7A, RG=250. This transistor is an electrostatic sensitive device. Please handle with caution. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rve. max. [unr] Gate Leakage Current Igss _|Vas=+25V, Vpg=0V | — | — [+10 | pA | Gate-Source Breakdown eee Kanoaersmm new fom] —|— [| Drain Cut-off Current | Ipss__| Vps=720V, VGg=0V [| — | — | 100 [ pA | Drain-Source Breakdown ae Vanni veneer [ow] — [| Gate Threshold Voltage Vps=10V, Ip=1mA [ 20[ — | 40[ Vv | Drain-Source ON Resistance [RD§(ON) |VGS=10V, Ip=3.5A | — [| 16[ 20] © | Forward Transfer Admittance [Ygsl__| Vpg=10V, Ip=3.5A [1.25 [| 50[ — | Ss | Tnput Capacitance [= [i500 — | Reverse Transfer Capacitance Vps=25V, Vgg=0V, f=1MHz [ — | 30] — | pF Output Capacitance [= ao | «om Ip=3.5A sv Vout [=| =| -| Turn-on Time t = Switching rarnan tne | tn | g RL |= [ | - | Time 10) Fall Time te 50 Vpp=400V . VIN : tr, tp<5ns, Turn-off Time toff Duty £1%, tw=10ps 220 Total Gate Charge (Gate- | - | 55 | - | Source Plus Gate-Drain) id _ _ _ Gate-Source Charge [Qe] VDP A0V Vas=10V, =7A ap —_] 70 Gate-Drain (“Miller”) Charge | _Qga _| C= [p=] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION cure |e | =] fa 7 A Current Diode Forward Voltage VpsF_ |IpR=7A, Vag=0V [| — | — [-19] v_ | IDR=7A, Vqs=0V [= [aa00 | — [as _| Reverse Recovery Charge dIpR /dt=100A / ys [— | i] — | 4c | MARKING TOSHIBA > Lot Number K2749-1— TYPE . oo" Month (Starting from Alphabet A) UU Year (Last Number of the Christian Era) 1998-11-12 2/5

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oe . ° GATE-SOURCE VOLTAGE Vgg (V) ° cae source VOLTAGE Vgg (V) en ; — o—— aa eH HHH ‘- ° COMMON SOURCE anaes 50 one oo SOURCE i a ‘ae 8 30] vps=20v For i Poe i ee ee le a Sa 5g Poppa EY a Lee 2 Se a ii ce ge aH Zo Hs ean a a earn a = ee a i — ati = ARS Annie =H a2 = UU FT|

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10 Rps(ON) — Te 50 IpR - Vps

Fee]: ere FS LH 3} é === a eee g SERS eg LTT PITT _ eeeeeee) Geceeeee g 8 Beco, OU) Ke Ren >= 2a One === 5 2=======e a 2 = — ae z= oal eo | ae a | beer tl F pe pees Fa titi tt ttt ttt} e LA tT tt | a yor Coa wos S08 Mi IF THI CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) 10000-—-——-r ACTANCE = VOS___ 5 Vth = Te Sea eee meet 3 Vps=10V Pa a Ss e 4 Ip=tma q Ht St iss = 5 oo OPN rg e HLH

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DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) DYNAMIC INPUT/OUTPUT

200 Pp - Te 500 CHARACTERISTICS 20

‘TESS see: ewet_}tt ttt tt | 2 wolwly ren 25 eo S REEF ET ee ee) ee g vol} gpa Aone + tu 3 s -LiIXt fy ty a LE Z| |i} é Co Geers coer : 5 |_| g 2, ||) | NE TT 2 op AEP] | tT |g zg Ei Ti tT TALLEY ae NS eee a LitTiti txt | | of] Se, a a a a a CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC) T9981 1245

Tth — t 5 oo ooo oo ooo 2, OI ee 0.3}— 02 ee ee a5 [tt aan Gaal Ona ee Ee 2 oer rn Th a2 0.03 =e | | t. ER ci anita eer ma th o.oogh LTT 10 10042 im 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA Eas - Teh a 1000 [I O50 a ee ee 8 [| ~ 800 = MER cow 2" 2 gE UI TNT ON 2 TKET ETT TT g Aetraeeatelll SSRETIT ce ee 400) i; en a) ee FI * SONREI OPN = of paren. FOES i rs oa) Sencha Sees’ a os nT in temperature, Voss Max | CHANNEL TEMPERATURE Tey CO) 0.05 oe 3 10 30 100 300 1000 = 3000 DRAIN-SOURCE VOLTAGE Vpg (V) Bypss -15V JW

4 Vpp , / \\|_ vps

Peak IAR=7A, RG=250 1p. —Bvpss_ Vop=av, L=25.5mH Fas= 2 wr “Bypss-Vpp) TOO AT 55