K2746 | DigiCamel IC Datasheet

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2SK2746 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm AS.9MAX. 03.240.2 @ Low Drain-Source ON Resistance : RNS (QN)=1.32 (Typ.) 2 J 24 © High Forward Transfer Admittance : |Y¢|=5.0S (Typ.) (TN I. A S| © Low Leakage Current : Ipgg=100/A (Max.) (Vpg=640V) 3? EE e@ Enhancement-Mode : Vth=2.0~4.0V (Vpg=10V, Ip=1mA) TI y y = 2.0403, | [ | $s +03 3 +) 1.0-0.25 i i a MAXIMUM RATINGS (Ta = 25°C) t 5.45£0.2 5a5z02 CHARACTERISTIC SYMBOL | RATING | UNIT |} J - | | | Drain-Source Voltage Vpss i a4 3 2 Drain-Gate Voltage (RGg= 20k) VpGR a 3 Gate-Source Voltage Voss 1. GATE 5 Drain Current | __| 3. source [Polke [ppt] Drain Power Dissipation (Te=25°C) | Pp | _—«150.-=«|~=SW__—i| |JEDEC = Single Pulse Avalanche Energy** EIAJ SC-65 Avalanche Current TOSHIBA 2-16C1B Repetitive Avalanche Eneray® Weight : 48g Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case | Rth (ch-c) [0.833 [°C/W] Thermal Resistance, Channel to Ambient Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting To, =25°C, L=24.9mH, Rg=250, IAR=7A This transistor is an electrostatic sensitive device. Please handle with caution. 9610016 4A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. [max.[unzr] Gate Leakage Current Tass |Vas==30V, Vps=0v L— | — [20] za | Gate-Source Breakdown ice Femeaforsion vane [aw —[— [| Drain Cut-off Current Ipss__|Vps=640V, Vag=0V [| — | — | 100] pA | Drain-Source Breakdown fae Kacamfrien vor [owe|—[- [| Gate Threshold Voltage Vps=10V, Ip=1mA [ 20[ — | 40[ v | Drain-Source ON Resistance |RDS(ON) | VGS=10V, Ip=3.5A [ — | is] 17[ 9 | Forward Transfer cn a oe Input Capacitance | — | 1500] — | Reverse Transfer C Vps=25V, Vag=0V 30 F Capacitance TSS f=1MHz P Output Capacitance [= ao | Rise Time tr 10V Vas oy fl Vout Turn-on Tim RL= Switching g 1149 |- | | - | Time a = 7 ecce Vpp=400V * IN : ty, te<5ns, Turn-off Time | tofr Duty < 1%, tyy=10,s 220 Total Gate Charge (Gate- Q 55 Source Plus Gate-Drain) id Vpp=400V, Vgg=10V c Gate-Souree Charge [Qe fip=7A [= sp] * Gate-Drain (“Miller”) Charge Ss SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION 7 A Current Pulse Drain Reverse Current | Ipgp |__| — | — | ai[ a Diode Forward Voltage VpsF_ |IpR=7A, Vag=0V [| — | — [-19] v_ | IDR=7A, VGs=0V [= [800 — [as | Reverse Recovery Charge dipR /dt=100A/ us on MARKING TOSHIBA > Lot Number K2746 TYPE h ing from Alphabet A) |e Month (Starting from Alphabet A) NUY Year (Last Number of the Christian Era) 1998-11-12 2/5

5 Ip - Vps 10 Ip - Vos

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i CASE) o§ Deere | AoE po Wit tt tt tt yt | CET TTT I 0 2 4 6 8 10 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Vas Vps - Vas “eae, FFA a I COMMON SOURCE ‘EPC eg Py te 2 20) eee 2 0n|| oe ss ee eee - ELLE TPT TTT 2 as t a stl} bee ty ee ee ||

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S EEE PTE g | aa s LLL Ty TTT TT | § | INC CEE a J PPP yy | Zz 4 ~ ee) 2 LILLE. ET o LT LAA TT LEE E errr tI 0 2 4 6 8 10 12 0 4 8 12 16 20 24 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) 0 l¥#s| — ID 10 Rps(ON) ~ ID 8 coumon source || [UIT I | [ cngrene SS Z| vose20v TL 3 | Yosriov EEE] ; SSeS Co § fee a ee a ei a TL ge ps Beg ett 32 CAs iL 2. SS Es wn a é LF | Be 08 2 1 ese % 03 ei s Ao ee Eee ee | PAST M1 g a | on O01 03 0.5 1 3.5 10 30 O1 03 0.5 1 3 5 10 30 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) aE (1). CP

5 Zz a 4 SSS

a Qo 2 ae === BS [| sa Zz WSS >2>=) eed 28 [Tri LaF Cle F SSE <0 =10 Be it tte aa I g ae a = 08 w 4 _e PE o.ogt ee Neonat VOLTAGE Vpg g Pee EEE 120 160 DRA a 40 BI - Tec atti vune te ee) Vth aaeee CASE TEMPERA’ “common [I a CE — Vps —y = SOURCE oceee A oor So ipsa aa ae ri} = : Pt yt | [ft | SS Sie : PSS ea mma p~~ os SU ef Pe a wo i Se a SS & =H 3 a | | ttf ° SaaS iI] e ly CLT fi tt} so CIN il a [Tt 8 “EHH HAN i FEESEEEEEEH é Lest ed \\Ny = to pri § “ERs ce Nel Ss 03 BRATURE Te CO) ~ 0 COMMON SOUR ini CASE TEMP! a CTA CT vor Te= 30 /OUT! f= 1MHe v5 10 NOSES T° ‘hi —05 05 wokce voutage Vos ) > MIARACTEIES > “TIED yet : F y “FFA a aie aa a no -nnyf g ne 2 Yop=100¥7 | | | é

2 SH «fH Kec

25 Sn ee ae eee eel

$2 soften LLIN TTA TTI" ade Bf fbspss | eS 2 Bae: EH = 10u 100u im 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA EAS — Tch a 1000) 30] Hep Max. putse) ft} ++ tt ~ TT Tt yy yt yy ey SDRMAL SNS ce a 2 yuncmmna NG g "EEE - LO ONE ON &

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3} Nonreperrnive HFT TUN | a a | carves mus ho dese La a a a 1] linearly with increase I) ee in temperature. f{—~pss St CHANNEL TEMPERATURE Teh (°C) 305 #10 30 50 100 300500 1000 3000 DRAIN-SOURCE VOLTAGE Vpg (V) Bypss 15V fl TAR | , -15V | van ky

4 Vbb J \\ Vps

Peak IAR=7A, RG=250. —1 Lp. ByDSS Vpp=a0v, L=24amH PAS 3 we “Bypss- pp? TOTO GTI

Product Information

K2746 specifications and overview.

Summary

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHNG, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Description

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHNG, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Source title K2746 Datasheet(PDF) - Toshiba Semiconductor

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