K2723

2SK2723 NEC | Alldatasheet

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Technical content

© 1994 DATA SHEET The information in this document is subject to change without notice. MOS Field Effect Power Transistors 2SK2723

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.

FEATURES

• Low On-Resistance R DS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) R DS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A)
• Low C iss C iss = 830 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D (DC) ±25 A Drain Current (pulse)* I D (pulse) ±100 A Total Power Dissipation (TA = 25 °C) P T 2.0 W Total Power Dissipation (Tc = 25 °C) P T 25 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C *PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device. Drain Source Body DiodeGate Gate Protection Diode 10.0 ± 0.3 PACKAGE DIMENSIONS (in millimeter) MP-45F (ISOLATED TO-220) 4.5 ± 0.2 2.7 ± 0.2 2.5 ± 0.11.3 ± 0.2 4 ± 0.2 15.0 ± 0.3 3 ± 0.1 0.7 ± 0.1 1.5 ± 0.2 2.54 1.Gate 2.Drain 3.Source 2.54 123 0.65 ± 0.1 3.2 ± 0.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D10623EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan

ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source R DS (on) 1 VGS = 10 V, ID = 13 A 28 40 m Ω On-state Resistance R DS (on) 2 VGS = 4 V, ID = 13 A 45 60 m Ω Gate to Source Cutoff Voltage V GS (off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance  y fs  VDS = 10 V, ID = 13 A 8.0 18 S Drain Leakage Current I DSS VDS = 60 V, VGS = 0 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance C iss VDS = 10 V 830 pF Output Capacitance C oss VGS = 0 430 pF Reverse Transfer Capacitance C rss f = 1 MHz 185 pF Turn-On Delay Time t d (on) ID = 13 A 21 ns Rise Time t r VGS (on) = 10 V 185 ns Turn-Off Delay Time t d (off) VDD = 30 V 100 ns Fall Time t f R G = 10 Ω 110 ns Total Gate Charge Q G ID = 25 A 35 nC Gate to Source Charge Q GS VDD = 48 V 2.8 nC Gate to Drain Charge Q GD VGS = 10 V 15 nC Body Diode Forward Voltage V F (S-D) IF = 25 A, VGS = 0 1.0 V Reverse Recovery Time t r r IF = 25 A, VGS = 0 60 ns Reverse Recovery Charge Q r r di/dt = 100 A/µs 125 nC t = 1 s Duty Cycle ≤ 1 % VGS R G VDD R L R G = 10 Ω VGS Wave Form VGS (on) ID td (on) ton toff tr td (on) tr 0 10 % 0 10 % 10 % 90 % 90 % 90 % ID Wave Form PG. D.U.T VDD R L 50 ΩPG. D.U.T t µ IG = 2 mA Test Circuit 1 Switching Time Test Circuit 2 Gate Charge VGS ID

FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS- Gate to Source Voltage - V ID - Drain Current - A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - °C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 0.1 0.1 100 1 10 100 TC = 25 °C Single Pulse 0 4 6 8 100

1000 Pulsed

VGS =20V VGS =4V VGS =10V Tch=-25°C 25°C 75°C 125°C 12 3 4 7 ID(pulse) ID(DC) DC 10msRDS(on) Lmited 1ms PW=100 s µ VDS =10V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - °C/W FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A yfs  - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ 0 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ 0.001 0.01 0.1 100 1 000 1m 10m 100m 1 10 100 1 000 10µµ 100 VDS =10V Pulsed 1 10 100 1000 100 1 000 20 30 Pulsed 10 100 Pulsed 1.0 VDS = 10 V ID = 1 mA - 50 0 50 100 150 Single Pulse 2.0 VGS =4V VGS =10V Tch=-25°C 25°C 75°C 125°C R th(ch-c)=5.0°C/W R th(ch-a)=62.5°C/W ID=13A 1.5 0.5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature -°C R DS(on) - Drain to Source On-State Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 - 50 0 50 100 150 ID = 13A 0.1 100 0.5 Pulsed 0.1 100 1 000 10 000 1 10 100 VGS = 0 f = 1 MHz 100 1 000 1 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE CURRENT IF - Dionde Current - A trr - Reverse Recovery Time - ns di/dt =100A/ s VGS = 0 0.1 100 1 10 100 1.0 1.5 VDD =30V VGS =10V R G =10Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 1 02 03 0 VGS =4V VGS =10V C iss C oss C rss VDD =12V 30V 48V VGS td(off) tf td(on) VDS tr VGS =0 VGS =10V 1 000 ID = 25A µ

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. C10535E Semiconductor device package manual. C10943X Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. X10679E Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037

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