K2717

2SK2717 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm 1040.3 $3.2202 2740.2 @ Low Drain-Source ON Resistance: Rpg (ON)=2.30 (Typ.) aa F] B = e@ High Forward Transfer Admittance : |Yf.|=4.4S (Typ.) Ea a] © Low Leakage Current : Ipgg=100/A (Max.) (Vpg=720V) Es | | | 2 e@ Enhancement-Mode — : Vih=2.0~4.0V(Vpg=10V, Ip=1mA) “ 1 MTT, 1 | 4 2 4 MAXIMUM RATINGS (Ta = 25°C) | ri! | 0.7540.15 bd CHARACTERISTIC SYMBOL UNIT ) = 25440.25, 2.5440.25 Drain-Source Voltage Voss | 500 | v_ * Drain-Gate Voltage (RGg=20k0) Vpcr | 900 | V_ | S — la Gate-Source Voltage Voss z is a ° . Drain Power Dissipation (Te=25°C) [ Pp | 45 | WwW 3. source Single Pulse Avalanche Energy** Avalanche Current JEDEC = Repetitive Avalanche Bnergy* | Bag | 45 | mJ_|[BIAJ S067 Channel Temperature TOSHIBA 2-10R1B Storage Temperature Range —55~150 Weight : 1.9g (Typ.) THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Rth (ch-c) Thermal Resistance, Channel to Ambient —_|Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tp) =25°C, L=43.6mH, RG=250, I~AR=5A This transistor is an electrostatic sensitive device. Please handle with caution. 26100142 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and t0 avoid sitvations in which @ malfunction of failure of 2 TOSHIBA. product could cause lost of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of ur products. No responsiblity is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss__ | Vags=+30V, Vpg=0V. | — | — [ +10][ pA | Gate-Source Breakdown een Fawaaforsinnvnre [ew] —|— [| Drain Cut-off Current Ipss Vps=720V, Vgg=0V. [| — | — | 100] pA | Drain-Source Breakdown Peso Pomme vor [=| -| v | Gate Threshold Voltage Vps=10V, Ip=imA [ 20[ — | 40[ v | Drain-Source ON Resistance [Rpg (ON) |VGg=10V, Ip=3.0A [| — | 23] a5] 2 | Forward Transfer am ra ocawsm ff [|e Input Capacitance | — [1200 | — | Reverse Transfer C Vps=25V, Vgg=0V P Capacitance Tss | f=1MHz P Output Capacitance [=a |

7 PPPoven | = | | = |

Turn-on Time t ‘Le Switching fromm tine | ton | g 66.7 |= | | - | Time 2 ns Fall Time te Vpp=200V . VIN : ty, te<5ns Turn-off Time | __ toff Duty =1%, tw=10ps 200 Total Gate Charge (Gate- Q 45 Source Plus Gate-Drain) id Vpp=400V, Vgg=10V, c Gate-Souree Charge Ip=5A [==] Gate-Drain (“Miller”) Charge | — | 20] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION fewest |e | I] A Current Diode Forward Voltage Vpsr_|IpR=5A, Vgg=0V | — | — [-19] Vv | TDR=5A, VGs=0V L— [1300 | — [as _| Reverse Recovery Charge dIpR /dt=100A / us | — | | — | zc | MARKING =z Lot Number K2717~)— TYPE LE Month (Starting from Alphabet A) u OU Year (Last Number of the Christian Era) 1998-11-12 2/5

5 |COMMON SOURCE o> COMMON SOURCE | | Zo | | _ frees pr _ ite I Are ete gaat) = fA pe copAReee OAC EEE | fe== | f=

2 DbAcrootT 387 LABS

. a Ce) a ee | DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) a Ip - Ves » Vos - Vas common source | | [4 “sec es [LSI FT Joommos source = qlsy Lt] 2 ot —_ tit [Ltrs es FELL a ae | Gaeeaae ey ee gy | Set PS eeees seen eee eee

2 Ll fy | || s LAS eee

2 COCA 5 POE

Pov § EEE) GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) Ntsl — 1D Rps (on) ~ ID g __ |eowwow source a , Peomor TI TI1_L LI zope) fee og | a a ae eee é 2D —— e@ Coie gg (J Ag be icmnllll 83 Tose | LH 'GS=10,1 eS La ea FE ao ee a — a eee eee A a og DRAIN CURRENT Ip (A) : DRAIN CURRENT Ip (A) TT S«*C“NB-T I-12 35

OSH | } © EE EREE 30, COMMO! SeSrece 5 ae acer jsseeeeD Gece I an - CI ey peace nce || in a P Sa a FH Hy g Peet Vos= KEE 8 Le 3 7 oe Fa /inn | 2 td aon ALE | fC arenes 7 le Fore a Ipc gs TI [|| . = so saeu ; i Ho aneaee :° LiZ1 | =04 0. GE Vps (V) ne FT | [| * colt Z| E VOLTA : | | = at FH ° IN-SOURCI as P= sane aa { i : | Loetnnen Li a

2 Pir — oo ;

• “ TEMPERATURE 4 s - CASE - Vps om Z AH fa (CE ea 3 ; 7 4 TA re i H | in ef on : Estee Sg a : i - Se Seis Set E rtp : ds a tthe Seiad F g feet L ~ = : 2 po SOURCE FAH Baill = = - | : | fo Me 35 ” — vee | rol Ten 2s'0 ‘nce votrace Vos . = a is . DRAIN. Pp - Oo 400] roy an Tit tye | e caae/-4unl foe : Ey att | 4 ae ao ae nae aan 7 a a CL Bm A a | E [I aa = 2 AM Fa HH 3 “EE rt 3 Te » ERO Coe aa : raze EE g “TPS | | an aH EAH al z —— ‘erate Te (°C) _ 1998-11-12

1 Tth — tw a

£2 oa Ua 82 omen TINE TTI TI * 83 °° SS SSS SEE Duty=tT 35 con EH rte Raiee-2A4OW BF oop OO tm Tom 0m i 70 * PULSE WIDTH tw (s) SAFE OPERATING AREA Eas — Tch 30) 1000) fipmax ous = TT | ee iret i sa COTTON J itor _| | ee | ~ seek eet a « EE Nn | 2 “ECTS SEE TN B™\\TPLLLELLL1L_ ge UU NUT IN oN g st CAINE 4 3

2 UT PEAT NETTIE | ee es

O01 PULSE Tce=25°C tS 15 100 125 150 Curves must be derated FEA 25 50 nearly with Increase in [vse ax. FH CHANNEL TEMPERATURE Teh (CC) 3 10 30 100 300 1000 3000 DRAIN-SOURCE VOLTAGE Vpg (V) Bypss fl /\\ —15V YW

4 Vpp /’ \\|_ vps

4 \\ TEST CIRCUIT WAVE FORM Peak IAR=5A, RG=250. _1 | oy. ,—Bypss_ Vopeaov, Leasent PAS“ Giapgs—vpp) 1998-11-12 5/5