K2699

2SK2699 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit ii CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE ——— APPLICATIONS 1S.9MAX, 03.240.2 e 2] 4 e@ Low Drain-Source ON Resistance : RD§(ON)=0.50 (Typ.) ‘ lam = Be «| ¢ High Forward Transfer Admittance : [Yfg|=11S (Typ.) x $] Ee ¢ 3 @ Low Leakage Current : Ipgg=100/A (Max.) (Vpg=600V) 5 > = a e@ Enhancement-Mode — : Vjh=2.0~4.0V (Vpg=10V, Ip=1mA) rea 4 + 0. g MAXIMUM RATINGS (Ta = 25°C) 102936 | & t CHARACTERISTIC SYMBOL | RATING 38202, 2estte Drain-Source Voltage Vpss_ | 600 [| V | i ea | | zl , 5 Drain-Gate Voltage (RGS=20K) | Vpgr| 600 | V_] 4 Sige i | Gate-Source Voltage Vass : | Pulse | Ipp | 48 [| AJ] 3. source Drain Power Dissipation (e=25°) | Pp | 150 | _W_| Tapa = Single Pulse Avalanche Energy** | Eag | 605 | mJ | Avalanche Current [tar |] a] BAS sc-65 Repetitive Avalanche Bnergy™ TOSHIBA 2-16C1B Channel Temperature Weight : 4.6g Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case [Rth (ch-c)_| 0.833 [°C/W] Thermal Resistance, Channel to Ambient __|Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tey =25°C, L=7.35mH RG=250, IAR=12A This transistor is an electrostatic sensitive device. please Handle with caution. Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can maltunction or ‘all due to their inherent electrical Sensivty and vulnerability to physical stress. It is the responsibilty of the buyer, when lizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHaRacrEnistic | syMBoL | TEST CONDITION Gate Leakage Current Igss | Vas=+25V, Vpg=0V. | — | — [ +10]| pA | Gate-Source Breakdown een fomeahorsma mew [awl —[— [| Drain Cut-off Current Ipss Vps=600V, Vas=0V [| — | — [ 100] 2A | Drain-Source Breakdown ee Kacaaliorinn vos [ow] [| Gate Threshold Voltage Vps=10V, Ip=1mA [ 20/ — | 40] v | Drain-Source ON Resistance [Rpg (ON) |Vqg=10V, Ip=6A [ — | os] oes] 2 | Forward Transfer _ _ ra [rset fef mal [| Tnput Capacitance = [2800] Reverse Transfer Vps=10V, Vag=0Vv, Capacitance Crss | eM 270 pr Output Capacitance Ss out VG@s oy al k Turn-on Time ‘L= 75 Switching ‘on g 500 Time 1 ail Time | tf 1- | «| - | vy Vpp=300V . IN : tr, tp<5ns, Turn-off Time | toff Duty <1%, ty=10zs 270 Total Gate Charge (Gate- Q Source Plus Gate-Drain) 8 Vpp=480V, Vgg=10V, Gate-Source Charge [Qs _]tp=12a [=| 37 =] *° Gate-Drain (“Miller”) Charge | — | 21] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Current Pulse Drain Reverse Current] Iprp [| | — | | 8 A Diode Forward Voltage VpsF_|IpR=12A, Vgg=0V [| — | — [-17] v ] Reverse Recovery Time IpR=12A, Vos=0V [= [aa0o [a Reverse Recovery Charge dIpr/dt=100A/ us [ — [| 14] — [xc | MARKING TOSHIBA > Lot Number K2699-+— TYPE . i Month (Starting from Alphabet A) NUY Year (Last Number of the Christian Era) 1998-11-12 2/5

. Te=25°C by (| . = Te=25°C TTT Yo con i Ae | fy ft | e | Ga 2 J fee . a part tT . 8 |} 2 LILIA] Ti fa | ge LY tl. Lt | a = 2 | g HY = | pee | | Ae a snes ASS | pe “a ‘Gs= Ape) Fee DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Vas 10 Vps - Vas eon 5 bi to eee] = los Pt tt ty Pe ee | | a ee | Ce eg iit tet tt ee ee | ge {TT TTT ty ee | 2 | | 1 | if tt yt s eo fe ne] z it lat yr) | | e |] MEET tt DEO) Ee el / io a Pea *§ PP GATE-SOURCE VOLTAGE Vgsg (V) GATE-SOURCE VOLTAGE Vgg (V) RDS(ON) — ID lY¢s] — ID 5 80) Loa 3 |eounon sovnce| [1 [] Il] ea asec . | someones EH 2 | voseso | as 3 reas Hf = on &

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a Z ~ 1 = = JUYAA 22 || e LA a att I ogee ol 3 0.5 1 3 5 10 30 0.5 1 3 5 10 30 «(50 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) smo SS

a0 Rps(ON) - Te 50 Ipr - Vps ) 2 wframe sm FE JE : aA Loo Ee WA s Joo | 1 fi SB A, Z| 2 | | | jt yy my gu LA gg Fee 2s — a ae. | Peet ok Eee Saae 2 “CesT Z if ott | ttt tt tt & AA LI || | CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth - Te

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oot eee] =e LEE} I foun etl anal FA wit D pe a ON 8 = Stef BCE PSC 7] Fe ee eee common source HHI tit es 30] BE {Sane Bait ieoecet # tlt Titi tt tt | 10 Te=25C CUUTNE ERS os 40 0 4080 ~~120.~~160 On 0305 1 305 10 30 50 100 CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) AMIC 01 Pe 5 “CTE TY senor source re a oh re Resse Ae = EAT T Et r t SENT TT ot | yg 2d PREP ET 8 yf LE To Ayan ° é Pt iN ey ye B LIVE TT Lg sora |g oo = ot +t | fm | tt |, 2 “COPE N TEE "TV AL ef! ftTPNerr Bo Ae | eee z [ZN [tty tty é a Littl ty | | KIT | & Vi Ww, 0 40 80 120 160 200 0 20 40 60 80 100 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qe (nC) 1998-11-12 4/5

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UII UTIL UI : mf 0.| NONREPETITIVE PULSE PSH MPERATURE Teh (0) ° Te=25°C CHANNEL TE! ‘ch ( 03) curves most be dated |<} NT linearly with increase in Vpss MAX. DRAIN-SOURCE VOLTAGE Vpg (V) a fl | / \\ - | TAN i Vpp /% \\] vps 4 \\ TEST CIRCUIT WAVE FORM Peak IAR=12A, RG=25Q 1 yp. -—BYDss_ Vpp=90V, L=7.35mH Eas=g Lt “Bypss-Vpp? TOTO GTI