2SK2662 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm t0t03 , g32402 27402 ¢ Low Drain-Source ON Resistance: RDS (ON) =1.3502 (Typ.) Ez Ei e@ High Forward Transfer Admittance : |Y¢.|=4.0S (Typ.) 4 = 4 Ei @ Low Leakage Current : Ipgg=100A (Max.) (Vpg=500V) Fe | [| ~ @ Enhancement-Mode =: Vjh=2.0~4.0V (Vpg=10V, Ip=1mA) Fn I MAXIMUM RATINGS (Ta = 25°C) 0.7540.15 bd | y y CHARACTERISTIC SYMBOL 2.5440.25, 2540.25 Drain-Source Voltage Vpss 2 rr Drain-Gate Voltage (RGg=20k) Vpcr | 500 | Vv | ae &-— Gate-Source Voltage Vass $ a 1. GATE Drain Power Dissipation (Te=25°C) | Pp | 85 | W_| 3._ SOURCE Single Pulse Avalanche Energy** [ Eas | 180 | mJ | JEDEC _— Avalanche Current BIAS 50-67 Repetitive Avalanche Energy* TOSHIBA 2-10R1B [Channel Temperature | Tey | 160 [fo Storage Temperature Range —55~150 Weight : 1.9¢ THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Rth (ch-c Thermal Resistance, Channel to Ambient Rth (ch-a) [ 62.5 [°C/W] Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tp, = 25°C, L=12.2mH, Rg=250, TaR=5A This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAAZ @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fil due to theit inherent electrical sensitivity and. vulnerability to physical stres, it isthe responsiblity of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHanacrenistic | syMBo | TEST CONDITION Gate Leakage Current Tass | Vas==25V, Vpg=0V L— |— |} za | Gate-Source Breakdown face Fanalorsien ine || —[ Drain Cut-off Current [ Ipss__| Vps=500V, Vag=0V. [| — | — | 100] ZA | Drain-Source Breakdown ae Kaoaocim vars ow | —[ Gate Threshold Voltage Vps=10V, Ip=imA [20 | — | 40[ v | Drain-Source ON Resistance [RDS (ON) _|VGS=10V, Ip=2.5A [— [135 }iso] 2 _| Forward Transfer nu ra esi far so —[ # = [70 | — | Reverse Transfer Pee | cect vars [=| | [= [200 | | «oo ry Ip=2.5A wy v [=| »| =| OUT Ves wl Turn-on Time ty RL= 25 Switching on gS 900. Time nq Fall Time te 15 Vpp=225V : VIN : tr, te<5ns, DD Turn-off Time | togr Duty =1%, tw=10ps Total Gate Charge (Gate- Q 17 Source Plus Gate-Drain) id Vpn =400V, Vee=10V, Ip=5A c Gate Source Charge [Gp] VDD 4OV, Vas=t0V, In=5A ar] Gate-Drain Miller”) Charge r—f é[— | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | svuboL | TEST CONDITION fret | oe |= IF 5 A Current Diode Forward Voltage VpsF__|IpR=5A, Vag=0V | — | — [-17] v ] Reverse Recovery Time IpR=5A, Vgs=0V [= [aa0r | — [as Reverse Recovery Charge dIpR/dt=100A/ us [— | 9] — [xc] MARKING ya % Lot Number K2662~— TYPE TL Month (Starting from Alphabet A) u DOV Year (Last Number of the Christian Era) 1998-11-12 2/5
5 Ip - Vps 10 Ip - Vps
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- Vps —— IDR =. "common source fi | Rps (oN) ~ Te 1 2 ee [TIL os TTT Ty * [common sounce fe] ee! 3 AREF Veaae ) Fe | ESSSS ES ue YY | g a AH 2 be 2 ol rau Be BZ, on y 7 feaseo, wv _| 4,
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10 Sok pYNAMIC INPUT OUTPUT =" :
i O88 « vounnce Vos W) ee 2 DRAIN-SOURC! Te . a | 8 sane = | all Ype-| = Coo - Very g FC; Bap aa = [| | S200 mi LL Zool 1s a “REEF & 1 t Ad ON 2 : i 7 com 2 z Sop fe | is sno ZZ SOURCE o 2 2 || z 10d I\\\\\\T | Pt
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CASE TEMPERA’ 1998-17-12 475
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8 AINA a a a
Nill CHANNEL TEMPERATURE Toy CC) os} ” puLse Te=25°C EH B 0.03} Curves must be derated Voss HH ‘VDSS linearly with increase in MAX. {TTI TAR son L_mmratur. Ul 15V fl yh LT 3 10 30 100 300 1000 —15V Y \\ DRAIN-SOURCE VOLTAGE Vps (V) anil Vpp /’ \\| vps / \\ TEST CIRCUIT WAVE FORM Peak IAR=5A, RG=250. a1 Bypss vpp=o0v, Leizamn PAS= 3°! Gypgs—vpp) On —_CT SGT OC