K2613

2SK2613 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( /G70-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications /Gb7/G20Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) /Gb7/G20High forward transfer admittance: /GefYfs/Gef = 6.0 S (typ.) /Gb7/G20Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) /Gb7/G20Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V , ID = 1 mA) Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 1000 V Drain-gate voltage (RGS /G3d 20 k/G57) V DGR 1000 V Gate-source voltage V GSS /Gb130 V DC (Note 1) I D 8 Drain current Pulse (Note 1) I DP 24 A Drain power dissipation (Tc /G3d 25°C) P D 150 W Single pulse avalanche energy (Note 2) EAS 910 mJ Avalanche current I AR 8 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg /G2d55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 0.833 °C/W Thermal resistance, channel to ambient R th (ch-a) 50 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V DD /G3d 90 V, Tch /G3d 25°C, L /G3d 26.3 mH, RG /G3d 25 /G57, IAR /G3d 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2 −16C1B Weight: 4.6 g (typ.)

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d /Gb130 V, VDS /G3d 0 V /Gbe/G20 /Gbe/G20 /Gb110 /G6dA/G20 Drain-source breakdown voltage V (BR) GSS IG /G3d /Gb110 /G6dA, VDS /G3d 0 V /Gb130/G20/Gbe /G20 /Gbe V /G20 Drain cut-OFF current I DSS V DS /G3d 800 V, VGS /G3d 0 V /Gbe /Gbe 100 /G6dA Drain-source breakdown voltage V (BR) DSS ID /G3d 10 mA, VGS /G3d 0 V 1000 /Gbe /Gbe V /G20 Gate threshold voltage V th V DS /G3d 10 V, ID /G3d 1 mA 2.0 /Gbe 4.0 V /G20 Drain-source ON resistance R DS (ON) V GS /G3d 10 V, ID /G3d 4 A /Gbe 1.4 1.7 /G57 Forward transfer admittance /GefYfs/Gef V DS /G3d 20 V, ID /G3d 4 A 2.0 6.0 /Gbe/G20S Input capacitance C iss /Gbe 2000 /Gbe Reverse transfer capacitance C rss /Gbe 30 /Gbe Output capacitance C oss VDS /G3d 25 V, VGS /G3d 0 V, f /G3d 1 MHz/G20 /Gbe 200 /Gbe pF Rise time t r /Gbe 20 /Gbe Turn-ON time t on /Gbe/G2040 /Gbe/G20 Fall time t f /Gbe/G2030 /Gbe/G20 Switching time Turn-OFF time t off /G20 /G20 /Gbe 100 /Gbe/G20 ns Total gate charge (gate-source plus gate-drain) Qg /Gbe 65 /Gbe/G20 Gate-source charge Q gs /Gbe 40 /Gbe/G20 Gate-drain (“miller”) charge Q gd VDD /G7e/G2d400 V, VGS /G3d 10 V, ID /G3d 8 A /Gbe 25 /Gbe/G20 nC/G20 Source-Drain Ratings and Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR /Gbe /Gbe /Gbe 8 A Pulse drain reverse current (Note 1) I DRP /Gbe /Gbe /Gbe 24 A Forward voltage (diode) V DSF I DR /G3d 8 A, VGS /G3d 0 V /Gbe /Gbe /G2d1.9 V Reverse recovery time t rr /Gbe 1600 /Gbe /G6ds Reverse recovery charge Q rr IDR /G3d 8 A, VGS /G3d 0 V, dIDR/dt /G3d 100 A//G6ds /Gbe 24 /Gbe /G6dC Marking TypeK2613 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) Duty /G3c/G3d1%, tw /G3d 10 /G6ds 0 V

10 VVGS

4.7 /G57

0.1 0.3 1 3 10 30 0.1 0.3 0.5 VGS /G3d 10,15 Common source Tc /G3d 25°C Pulse test Forward transfer admittance /GefYfs/Gef ( S ) Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) /GefYfs/Gef /G2d ID Drain current I D (A) RDS (ON) /G2d ID Drain-source on resistance RDS (ON) ( /G57) 4 0 208 12 16 6.0Common source Tc /G3d 25°C Pulse test VGS /G3d 4.75 V 5.0 5.25 5.5 5.75 10 15 Common source VSD /G3d 20 V Pulse test 2 0 104 6 8 Tc /G3d /G2d55°C 100 0.1 100 0.1 10010 100 Tc /G3d /G2d55°C Common source VSD /G3d 20 V Pulse test 40 208 12 16 Common source Tc /G3d 25°C Pulse test ID /G3d 8 A Common source Tc /G3d 25°C Pulse test 200 10040 60 80 VGS /G3d 5.0 V 6.25 5.25 5.5 5.75 6.5 6.0

1 0.1 1000 10 Ciss Coss Crss Common source VGS /G3d 0 V f /G3d 1 MHz Tc /G3d 25°C VGS /G3d 0, /G2d1 V 100 0.1 /G2d0.20 /G2d1.2/G2d0.6 /G2d0.4 /G2d0.8 /G2d1.0 Drain power dissipation P D (W) Gate threshold voltage V th ( V ) Case temperature Tc (°C) RDS (ON) /G2d Tc Drain-source on resistance R DS (ON) ( /G57) Drain-source voltage V DS (V) IDR /G2d VDS Drain reverse current I DR ( A ) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Case temperature Tc (°C) Vth /G2d Tc Case temperature Tc (°C) PD /G2d Tc /G2d40 /G2d80 1600 40 80 Common source VGS /G3d 10 V Pulse test ID /G3d 8 A 200 120 160 0 80 120 20040 160 Drain-source voltage V DS (V) Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Dynamic input/output characteristics /G2d80 0 40 80 120 160/G2d40 Common source VDS /G3d 10 V ID /G3d 1 mA Pulse test 500 100 300 200 400 0 40 60 80 10020 Common source ID /G3d 8 A Tc /G3d 25°C Pulse test 400 200 VDS /G3d 100 V VDS VGS

10 /G6d 100 /G6d 1 m 10 m 100 m 11 0 0.001 0.01 0.1 T PDM t Duty /G3d t/T Rth (ch-c) /G3d 0.833°C/W Single pulse Duty /G3d 0.5 0.2 0.1 0.05 0.02 0.01 rth /G2d tw Safe operating area EAS – Tch Drain-source voltage V DS (V) Pulse width t w (S) Channel temperature (initial) Tch (°C) Normalized transient thermal impedance rth (t)/Rth (ch-a) Avalanche energy E AS ( m J ) Drain current I D (A) /G2d15 V 15 V Test circuit Wave form IAR BVDSS VDD V DS RG /G3d 25 /G57/G20 VDD /G3d 90 V, L /G3d 26.3 mH /Gf7/Gf7 /Gf8 /Gf6 /Ge7/Ge7 /Ge8 /Ge6 /G2d/Gd7/Gd7/Gd7/G3d VDDBVDSS BVDSS2IL2 1ΕAS 0.01 0.1 0.03 0.05 0.3 0.5 10 3 100 30 10000 300 DC Operation Tc /G3d 25°C 100 /G6ds * 1 ms * * Single nonrepetitive pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. ID max (pulsed) * ID max (continuous) VDSS max 1000 3000 100 200 400 600 1000 800 50 75 100 125 150

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE