2SK2610 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
1S.9MAX, 03.240.2 e@ Low Drain-Sorce ON Resistance : Rpg (ON) =2.30 (Typ.) (ey ‘\\ | - A 4 1 @ High Forward Transfer Admittance : |Y¢g|=4.4S (Typ.) 3? el 3 @ Low Leakage Current : Ipgg=100A (Max.) (Vpg=720V) TI * U @ Enhancement-Mode : Vth=2.0~4.0V (Vpg=10V, Ip=1mA) 2.0403. | a +03 3 MAXIMUM RATINGS (Ta = 25°C) aL 5.45£0.2 5a520.2 CHARACTERISTIC SYMBOL xjos Hi Drain-Source Voltage Vpss_| 900 | V_ | i Sha “8 2 Drain-Gate Voltage (RGg = 20k) Vocr_|_900 | v | — d Gate-Source Voltage Vass 1. GATE 5 Drain Current | | A 3. SOURCE [Pate | Ipp is] Drain Power Dissipation (Te=25°C) [ Pp | 150 | Ww | JEDEC = Single Pulse Avalanche Energy** EIAJ SC-65 Avalanche Current TOSHIBA 2.16018 Repetitive Avalanche Bnengy™ Weight 765 Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case 0.833 Thermal Resistance, Channel to Ambient Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tp, =25°C, L=43.6mH, IaR=5A, RG=250. This transistor is an electrostatic sensitive device. Please handle with caution. 26100142 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fil due to theit inherent electrical sensitivity and. vulnerability to physical stres, it isthe responsiblity of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of ur products. No responsiblity is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Tess _|Vas=+30V, Vpg=0V [| — | — [+10 | za | Gate-Source Breakdown eae Famaslessiem mee fee [= | = Lv Drain Cut-off Current Ipss Vps=720V, Vag=0V. [| — | — | 100 | ZA | Drain-Source Breakdown ase Fawnsfocis veseor [ow [ = | = Lv Gate Threshold Voltage Vps=10V, Ip=imA [ 20[ — | 40] v | Drain-Source ON Resistance [RDS (ON) | VGS=10V, Ip=3.0A | — | 23] 25] 0 | Forward Transfer Admittance] [Yfs|__ | Vpg=20V, Ip=3.0A [ 11 [| 44/ — | Ss | Tnput Capacitance [— [1200 — | Reverse Transfer Capacitance Vps=25V, Vag=0V, f=1MHz [| — | 20[ — | pF Output Capacitance [= [a0 wo ms Ip=3A en opm Ll Vv out Turn-on Time = Switching [rumen tine | tn | g BLE |= | | -| " 66.70. Time rs Vpp=200V . VIN : tr, te<5ns, pp Turn-off Time | toff Duty <1%, tw=10ps Total Gate Charge (Gate- Q 45 Source Plus Gate-Drain) 8 _ c Gate-Source Charge [Qe __ | WDD™400V, Vas=10V, ID=5A |_| a5 — | Gate-Drain (“Miller”) Charge | — | 20] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION fermen |e |= =I =] | A Current Diode Forward Voltage VpsF_ |IpR=5A, Vagg=0V | — | — [-19] Vv] TpR=5A, Vag=0V [= [i800 | — [as] Reverse Recovery Charge dipR/dt=100A / pus | — [| 1] — {zc |] MARKING TOSHIBA > Lot Number K2610++— TYPE . ao Month (Starting from Alphabet A) NOUV Year (Last Number of the Christian Era) 1998-11-12 2/5
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rth — tw hh oo ooo Pee ae 8 1 Fouy=08 Hae ee — uty =0.5 HA Se 2 os oe 8 0.3| Fos He Co Ser & . Arr HA BB oma eirponns eH tt Bo Te ot LM 2 oo ea) Ma = 6.003, — HE eee eee OT TN puty=err Pe a 10m 1004 im 10m 100m 1 10 PULSE WIDTH tw (s) EAS — Tech SAFE OPERATING AREA 1000) TT rote eA - ELE TT Ett | aT 2 gt tt tt ttt CoN ions _| | = 00 Fy CoN | (Rosco |) SS 2 Pi tt ty te ey ey 2 (ConTINUOUS) tit’ N44 ® 2 eto Ne ~ coo ti | ttt tt | a 3| PA NN a g 0 Ne
2 CEN NTE 3
2% wae NI a 0.05 wrth inereoge Fvpss max. f= CHANNEL TEMPERATURE Teh (*C) 0.03 temperature. CAEP 4} 10 a7 10030-1000 9000 DRAIN.SOURCE VOLTAGE Vpg (V) Bypss 15V fl TAR —15V | a \\
4 Vpp 4 \\ Vps
Peak IAR=5A, RG=25Q 1 p.-—Bypss_ Vpp=oV, L=436mH | SAS QE r “Bypss- Vp? TOO TTT