2SK2601 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 1S.9MAX. 03.240.2 ¢ Low Drain-Source ON Resistance : RN§ (QN)=0.750 (Typ.) 3 A 2| 3] e@ High Forward Transfer Admittance : |Y¢.|=7.0S (Typ.) (TEN | @ Low Leakage Current : Ipgg=100A (Max.) (Vpg=500V) z b ie) 7 3 @ Enhancement-Mode : Vth=2.0~4.0V (Vpg=10V, Ip=1mA) au } ue MAXIMUM RATINGS (Ta = 25°C) +93, | | 2 1.07 0.25 i CHARACTERISTIC SYMBOL sass02) || SASEO2 Drain-Source Voltage Vpss xls | | | . Drain-Gate Voltage (RGg=20k0) Vper | 500 | V_ i} 2 *s} | af 2 Gate-Souree Voltage Vass Sa 8) pope | pf to OT A Drain Current c D 10 A 1. GATE 3 | Pulse | Upp [40 | Az. rain rear sink) Drain Power Dissipation (Te=25°C) | Pp | 125 | w || _3._ Source Single Pulse Avalanche Energy** JEDEC _— Avalanche Current BIAS 50-65 Repetitive Avalanche Energy* TOSHIBA _2-16C1B [Channel Temperature | Ten | 160 [ fo Storage Temperature Range —55~150 Weight : 4.68 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting T,,=25°C, L=4.59mH, Rg=250, IAR=10A This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss Vas=+25V, Vpg=0V | — | — [ +10][ ZA | Gate-Source Breakdown fee Kawaaforsinnvnre fo |—|—[ | Drain Cut-off Current Ipss Vps=500V, Vag=0V. [| — | — | 100] ZA | Drain-Source Breakdown ee Kacaaforimn vox fw [—[-[ | Gate Threshold Voltage Vps=10V, Ip=imA [20 | — | 40[ v | Drain-Source ON Resistance |RDS(ON) | VGS=10V, Ip=5A | — [075 | 10] © | Forward Transfer cae ba asimnrss [es [vol [8 [= [300 | | Reverse Transfer [= 380 | «oo ry Ip=5A wv v |= | =| - | Vos wll ouT Turn-on Time = 50 Switching fromon tine | ton | - RL=600 I= | | - | Time Po) Fall Time te 45 Vpp=300V . VIN : tr, t¢<5ns, pp Turn-off Time | tofr Duty <1%, tw=10ps 180 Total Gate Charge (Gate- Q Source Plus Gate-Drain) id Vpp=400V, Vgg=10V, c Gate Source Charge [Qs |p =108 p= Gate-Drain Miller”) Charge P— fat — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cHaRacreRistic | svMBou | TEST CONDITION wre fe | LH] Current Diode Forward Voltage Vpsr[ipr=10A, Vag=0v b= p= 17 v_] IpR=10A, Veg=0V | — | 00] — | as | Reverse Recovery Charge apr /at=100A/ us [= | 43} — | xc | MARKING TOSHIBA > Lot Number K2601-+— TYPE . i Month (Starting from Alphabet A) NUY Year (Last Number of the Christian Era) 1998-11-12 2/5
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