2SK2564 SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS RATINGS (F8F60VX2) 600V 8A Case : E-pack VX-2 Series Power MOSFET N-Channel Enhancement type (Unit : mm) Case : FTO-220 Switching power supply of AC 100-200V input Inverter Power Factor Control Circuit APPLICATION Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.
FEATURES
Absolute Maximum Ratings iTc = 25j Item Symbol Conditions RatingsUnit Storage Temperature Tstg -55\`150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS }30 Continuous Drain CurrentiDCjID 8 Continuous Drain CurrentiPeak)IDP 24 A Continuous Source CurrentiDCjIS 8 Total Power DissipationPT 50 W Single Pulse Avalanche CurrentIAS Tch = 25 8 A Dielectric Strength Vdis Terminals to case, AC 1 minute2 kV Mounting Torque TOR i Recommended torque : 0.3N¥m j0.5 NEm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2564 ( F8F60VX2 )VX-2 Series Power MOSFET
- Electrical Characteristics Tc = 25℃ Item Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 600 V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 250 μA Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V ±0.1 Forward Tranｓconductance gfs ID = 4A, VDS = 10V 2.4 5.5 S Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 4A, VGS = 10V 0.9 1.2 Ω Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3.0 3.5 V Source-Drain Diode Forwade Voltage VSD IS = 4A, VGS = 0V 1.5 Theｒmal Resistance θjc junction to case 2.5 ℃/Ｗ Total Gate Charge Qg VDD = 400V, VGS = 10V, ID = 8A 42 nC Input Capacitance Ciss 1130 Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 85 pF Output Capacitance Coss 245 Turn-On Time ton ID = 4A, RL = 37.5Ω, VGS = 10V 55 80 ns Turn-Off Time toff 195 290
2SK2564 Transfer Characteristics VDS = 25V pulse test TYP Tc = −55°C 25°C 100°C 150°C Gate-Source Voltage V GS [V] Drain Current I D [A]
Static Drain-Source On-state Resistance 0.1 -50 0 50 100 150 2SK2564 VGS = 10V pulse test TYP ID = 4A Case Temperature Tc [ °C] Static Drain-Source On-state Resistance R DS(ON) [Ω ]
-50 0 50 100 150 2SK2564 VDS = 10V ID = 1mA TYP Case Temperature Tc [ °C] Gate Threshold Voltage V TH [V]
0.01 0.1 100 1 10 100 1000 2SK2564 100µs Tc = 25°C Single Pulse 200µs 1ms 10ms DC Drain-Source Voltage V DS [V] Drain Current I D [A] RDS(ON) limit
Transient Thermal Impedance 0.01 0.1 2SK2564 10-4 10-3 10-2 10-1 100 101 102 0.05 0.50.2 20 5052 200 500 2000 5000 Time t [s] Transient Thermal Impedance θjc(t) [°C/W]
Single Avalanche Energy Derating [%] Starting Channel Temperature Tch [ °C] Single Avalanche Energy Derating
0.005 f=1MHz Tc=25°C TYP Ciss Coss Crss Drain-Source Voltage V DS [V] Capacitance Ciss Coss Crss [pF]
Single Avalanche Current - Inductive Load 0.1 100 2SK2564 0.1 1 10 100 0.05 0.50.2 20 5052 200 500 2000 5000 VDD = 90V VGS = 15V → 0V Rg = 25Ω IAS = 8A EAS = 290mJEAR = 29mJ Inductance L [mH] Single Avalanche Current IAS [A]
Power Derating [%] Case Temperature Tc [ °C]
Gate Charge Characteristics ID = 8A TYP 100V VDD = 400V VGS VDS Gate Charge Qg [nC] Drain-Source Voltage V DS [V] Gate-Source Voltage V GS [V]