K2544

2SK2544 TOSHIBA | Alldatasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGURATOR APPLICATIONS Unit in mm 103MAX., 03.6402 coy} sl 3 ¢ Low Drain-Sorce ON Resistance —: RNS (ON) =0.9 (Typ.) xp z= 4 © High Forward Transfer Admittance : [Yf|=5.5S (Typ.) x i Fs 4 @ Low Leakage Current : Ipgg=100A (Max.) (Vpg=600V) EI @ Enhancement-Mode —: Vth=2.0~4.0V (Vpg=10V, Ip=1mA) i 7 1.6MAX. 2 } MAXIMUM RATINGS (Ta = 25°C) || 2 cuanacTenistic | Siaor aha Drain-Source Voltage Vpss_ [600 | V_ i}. 3 [7 | Drain-Gate Voltage (RGg=20k0) Vpcr | 600 | V il- yet et mE Gate Source Vollage Vass La ; Pp pet mT A cate 1B) Drain Power Dissipation (Te=25°C) | Pp | _—-80_~—=s«|-sW_—if_ > SOURCE Single Pulse Avalanche Energy** JEDEC TO-220AB Avalanche Current [tar [6] A [leas 50-46 Repetitive Avalanche Energy* | Far | 8 | J |Irosmmpa _2-10P1B Channel Temperature ; Storage Temperature Range Wergns 206 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient | Rth (ch-a)| 83.3 [°C/W] Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Tp) =25°C, L=16.8mH, RG=250, I~AR=6A This transistor is an electrostatic sensitive device. Please handle with caution. 961001E4A2 @ TOSHIBA jis continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to ther inherent electrical sensitvty and vulnerability to physical stress. isthe responsibilty of the buyer, when tizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of @ TOSHIBA product could cause lost of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein 's presented only as 2 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC —_| SYMBOL TEST CONDITION Gate Leakage Current Igss__|Vag=+25V, Vps=0V | — | — | +10] ZA | Gate-Source Breakdown a Fomaaiorsinn ne [owo[ | [v Drain Cut-off Current Ipss__|Vps=600V, Vgg=0V | — | — | 100] yA | Drain-Source Breakdown Bees finns voor [ow —[ Gate Threshold Voltage | Vy | Vp§=10V, Ip=imA Laop = [ao v_] Drain-Source ON Resistance | RDS (ON) | VGS=10V, Ip=3A | — | o9] 125] 2 | Forward Transfer Admittance| _ [Yf| Vps=10V, Ip=3A [ 20] 55/ — | s | Input Capacitance | — | 1300] — | Reverse Transfer Capacitance Vps=10V, Vgg=0V, f=1MHz | — | 130] — | pF Output Capacitance b= | 400 — | oo Ty Ip=3A Rise Time tr 10V Vv, frserime |e | vi out |= | =| -| Turn-on Time Ry =1000 Switching roman tine | ton | S t |-[ «| -| . ir . VIN : tr, tf<5ns, Turn-off Time toff Duty =1%, tw=10us 150 Total Gate Charge (Gate- Q 30 Source Plus Gate-Drain) 8 . c Gate Source Charge [Qe | VDD=400V, Vas=10V, Ip=6A -—) Ga] Gate-Drain (“Miller”) Charge | — | 12] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Continuous Drain Reverse l A Current DR Diode Forward Voltage VpsF_|Ipr=6A, Vgg=0V | — | — |-17] v | Reverse Recovery Time Ipr=6A, Vgg=0V | — | 1000; — | ns | Reverse Recovery Charge dIpR/dt=100A/ us [= | 7] — [xc | MARKING ra % Lot Number K2544 TYPE . ao Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) 1998-11-12 2/5

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COMMON SOURCE rT] Ti {4 2 COMMON SOURCE = Z E a 8 / ecoetteey PC Bz LEER? Ge enero anne z LA" 2 os Lott ttt tty arn iy A asad CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) sono CAPACITANCE - Vps 5 Vth -— Te = = | | [1 [|] common source ee iss roo TSS e FE ww € FN Ip=1mA . — aS g SON es wa eal tee - PRR TTT TTT

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