2SK2541 NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2541 is a switching device which can be driven directly by a PACKAGE DRAWINGS 1.5 V power source. (in millimeter) The MOS FET has excellent switching characteristics and is suitable 4,040.2 2.040.2 - ae Reuranernrnrann bE oof Fhe for use as a high-speed switching device in digital circuits. 1 Le 123 o - FEATURES Toso TG © Can be driven by a 1.5 V power source. al | i © Not necessary to consider driving current because of its high input 0.45 NS ad impedance. g © Possible to reduce the number of parts by omitting the bias resistor. o a ABSOLUTE MAXIMUM RATINGS (Ta = +25 °C) Drain to Source Voltage Voss 50 Vv _ Gate to Source Voltage Voss +7.0 Vv 301.2 1.27,3° Drain Current (DC) Ini) 10.1 A lich Fee : Lie BIE Drain Current (pulse) ID(pulse) +0.2* A ? e Total Power Dissipation Pr 250 mW Channel Temperature Tc 150 °C EQUIVALENT CIRCUIT Storage Temperature Tstg -§5to+150 °C 1. Source Drain(O) *PW £10 ms, Duty cycle $ 1% 2 Drain 96a Gate) Source(S) (Diode in the figure is the parasitic diode.) The diode connected between the gate and source of the transistor serves as a protector against ESD. When — this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. "Document No. D10728EJ2V0DS00 (2nd edition) (Previous No. TD-2522) Date Published September 1995 M Printed in Japan © NEC Corporation 1995
ELECTRICAL CHARACTERISTICS (Ta = +25 °C) —~ [“cnanacrensnie [| svisou_[ wn [WR | MAK | NT | TESTCONOTTONS | [orn curortCunent we |) 0) pp nso vesso [Gao testage Curent | ws | P| | e220, v0 | [Gato cutetfVoroge ———~(Vosom [os | a7 | a1_| v | woensavii= 105m | | Forord Tenafer Admins | Iysl [ 20 | |] mS] vos=20vo- 10 ma | | oreinto Source On-Site Resonce | fsa [| a2] 80 | @ | vere 1sV.n-1ma | | rin to Source OnStatResinonce | fosonr [| 16 | 20 | @ | ves=28V.b- 10a | [rain to Source OnStatResitonco | fosom | | 2 | 15 | @ | ver a0V.b=10ma | [npwtcapsctoncs Gm ||P [ficeTine ie P|
TYPICAL CHARACTERISTICS (Ta = 25 °C) DERATING FACTOR OF FORWARD BIAS DRAIN CURRENT vs. SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE 200 0 [ | |] | [TTT] » vol Lt Coo * 2° CTT eT 5 en Ze S fe Li lve | Sw 2 of POLL a ZSSSnnere | A Ves = 1.0 V ———— 0 30 60 90 120 150 0 1 2 3 4 5 _ Ta- Ambient Temperature - °C Vos - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. TRANSFER CHARACTERISTICS DRAIN CURRENT gg 10 il s Eon ci on . == E oof r= M25 "cht UT z ee fe 2 SHS 25 "Caen ae ee sess ciiseeecsastl" <add iitn Vent | ~ ¢ Peer : ati a i aan 5 ary Za
0.01 SS SS ia A
Fe ee = CCU to) 1 2 01 1 10 100 1000 Ves - Gate to Source Voltage - V lp - Drain Current - mA ~~ DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE Go vs. DRAIN CURRENT Go vs. DRAIN CURRENT g 70 g 70 & heel TTT TTT & we=2enll [TM UTM B 60 2 60 eT 2 UME TET Tl @ 50 ] @ 50 Ba Hey (an Sof LUI TTT TUTTI § Al III Seo MT TT Tl 8 30 Fee 8 30 wi eatin So UUM ETT TMT ag aereee et || © 10 S io Soetteercotonll pane oo é on 1 10 100 é i 10 100 1000 Ip - Drain Current - mA lo - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE SG vs. DRAIN CURRENT Gq vs. GATE TO SOURCE VOLTAGE 8 70 8 50 5 Ves = 4.0V S & 60 a St UUM TUT TT £ Hl SAM EN Bol [beste | ® 49 ® 30 $ oot UM TT TTT 3 er 8 30 8 Fy Ta = 75 °C 5 20 Ba aril SNS £ 2 — a © Ete Jd | = 10 >
2 Tt Th Pe
= of TM TTT Ll j ¥ 1 10 100 1000 g 0 2 4 6 @ é lo - Drain Current - mA Ves - Gate to Source Voltage - V ~- CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 10 pe 100 SS 0 SS eee 5S 5 ee acett ee) a cn . a iat 2 a ee
8 PEt Eat é PZ
| ll 4 lll S 1 = = 10 eto ; ee ee ee ee | a _— eo SS ee S| — a — oe . e a = ee Sos ese i on fq a A € cS A é J NE 3 eet he foo — | HTT NNT es ee ee ° Ves = 0 g Vesion = 3V o4 if = 1 MHz “4 Re = 10 a) 2 5 10 20 50 100 10 20 50 100 200 500 1000 Vos - Drain to Source Voltage - V lo - Drain Current - mA SOURCE TO DRAIN DIODE _ FORWARD VOLTAGE 0 ces Se ee a 4 a a a a : a 7a ey
5 SS = SS SSS
< _— § a ey A 5 00) | F —— a | 2 a ee ee 0.4 08 1.2 16 2 Vso - Source to Drain Voltage - V
_ REFERENCE — NEC semiconductor device reliability/quality control system TEI-1202 Semiconductor device mounting technology manual 1E1-1207 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134
[MEMO] ~ No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual = Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on ~ a customer designated “quality assurance program” for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life ~ support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11