2SK2466 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U-MOS) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
. oct © 4V Gate Drive PT at @ Low Drain-Sorce ON Resistance: Rpg (ON) =34m0 (Typ.) 3 TT 2 © High Forward Transfer Admittance : [Yfs|=30S (Typ.) 8 ur e@ Low Leakage Current : Ipgg=100uA (Max.) (Vpg=100V) A z e Enhancement-Mode — : Vjh=0.8~2.0V (Vpg=10V, Ip=1mA) 0.7540.15 FI | y W MAXIMUM RATINGS (Ta = 25°C) 2.5440.25. 2.544025 CHARACTERISTIC SYMBOL UNIT 2 S| $ I} FS Drain-Source Voltage TSS a > Drain-Gate Voltage (RGg = 20k) VDGR i (8) Gate-Source Voltage Vass 1. GATE, S [| 30 | : Drain Current | | A 3. SOURCE [Pulse | Ipp | 120 _| Drain Power Dissipation (Te=25°) | Pp | 40 | w_|K = Single Pulse Avalanche Energy** EIAJ SC-67 Avalanche Current [ Ian | 30 | A_ |{TOSHIBA 2-10RIB Repetitive Avalanche Energy | Ear | 4 | mJ _| Weight: 198 Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case 3.125 Thermal Resistance, Channel to Ambient | Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=25V, Starting Toh =25°C, L=525H, Rg=250, I~R=30A This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss_ _| Vas=+16V, Vpg=0V | — | — | +20] yA | Drain Cut-off Current Ipss Vps=100V, Vag=0V [| — | — | 100] ZA | Drain-Source Breakdown _ _ cae Famoporiinn veer [=| - [¥ Gate Threshold Voltage Vps=10V, Ip=1mA [ o8 | — | 20] Vv | Vgs=4V, Ip=i5A [= | a] 70 | Drain-Source ON Resistance | RDS (ON) Vag=l0V, Ip=15A L— | 34) 46 | m2 Forward Transfer Admittance] —|Yfs| Vps=10V, Ip=15A [| is | s0/ — | $s | Input Capacitance | — | 3250] — | Reverse Transfer Capacitance Vps=10V, Vag=0V, f=1MHz | — | 230| — | pF Output Capacitance [= [20 — | Vv GS oy. Switching 7 g =3.330 i: 1 a Boo Vpp=50V
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Duty 51%, tw=10ys | | 20 | — Total Gate Charge (Gate- Q Source Plus Gate-Drain) id Vpn80V, Vae=10V, 1p=30A C Gate-Souree Charge [Ge | YDD=80V: Vas=10V, Ip=80a ~~ 8 Gate-Drain Miller”) Charge P— > 2] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Current Pulse Drain Reverse Current] Iprp [| = | = [2207 A Diode Forward Voltage VpsF_ |IpR=30A, Vag=0V [| — | — [-17] Vv] IpR=90A, VGs=0V [= [a0 [= as Reverse Recovery Charge dipp/at=50A/ ps P= [280 = Pac] MARKING , a 2 Lot Number K2466 TYPE . ao Month (Starting from Alphabet A) NUY Year (Last Number of the Christian Era) 1998-11-12 2/5
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ZS os Fo2 i cel | a 3 (ee Es 0.03 eer eh eee ag poo ree EEE TET 8 ote tL] 2 oC tte =| Zz 0.003] a coo LIME TTT TTI TTI) even =aa28er 10 100n im 10m 100m: 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA Eas — Tch ET A TT TT T_T aa ee 100 Se — . 2 of Cativges HHI HES CEE yom LE SST N EA ee IN 2°NTLELPELLleey | a § [bc oPeramon “SHE se LIN ET ETT TT | = a Te=25°C oD | | 4 rf); >_ NEEL LL] 2 3 CIN TT 100] aes ett | ee es a UNM TUTE NIE JOE EE
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03) cares mst bo ented +} — linearly with increase in yy 1 3 10 30 100 300 DRAIN-SOURCE VOLTAGE Vpg (V) 15V fl laR —15V | / \\ i Vpp /“ \\ Vps / \\ TEST CIRCUIT WAVE FORM Peak IAR=30A, RG=250. 1 | .-— BvDss vpp=25V, v=se5uH PAS 9h Gpes—Vpp? OO? OO 0 —ooooo TO