2SK2461 NEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2461 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications.

FEATURES

  • Low On-Resistance RDS(on)1 = 80 m Ω MAX. (@ V GS = 10 V, I D = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ V GS = 4 V, I D = 10 A)
  • Low Ciss C iss = 1400 pF TYP.
  • Built-in G-S Gate Protection Diodes
  • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Drain to Source Voltage V DSS 100 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±20 A Drain Current (pulse) * ID(pulse) ±80 A Total Power Dissipation (T c = 25 ˚C) P T1 35 W Total Power Dissipation (T A = 25 ˚C) P T2 2.0 W Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Single Avalanche Current IAS 20 A Single Avalanche Energy EAS 40 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting T ch = 25 ˚C, RG = 25 Ω , VGS = 20 V → 0 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE © 1995 DATA SHEET Document No. TC-2529 (O. D. No. TC-8078) Date Published April 1995 P Printed in Japan Body Diode Source Drain Gate Gate Protection Diode MP-45F (ISOLATED TO-220) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 2.5 ±0.1 0.65 ±0.11.5 ±0.2 2.54 1.3 ±0.2 2.54 0.7 ±0.1 4 ±0.2 15.0 ±0.3 12.0 ±0.2 3 ±0.1 123 1. Gate 2. Drain 3. Source 13.5MIN. PACKAGE DIMENSIONS (in millimeters)

ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS(on)1 58 80 VGS = 10 V, I D = 10 A Drain to Source On-Resistance RDS(on)2 70 100 VGS = 4 V, I D = 10 A Gate to Source Cutoff Voltage VGS(off) 1.0 1.7 2.0 VDS = 10 V, I D = 1 mA Forward Transfer Admittance | yfs | 12 19 VDS = 10 V, I D = 10 A Drain Leakage Current IDSS 10 VDS = 100 V, V GS = 0 Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, V DS = 0 Input Capacitance Ciss 1400 VDS = 10 V Output Capacitance Coss 470 VGS = 0 Reverse Transfer Capacitance Crss 150 f = 1 MHz Turn-On Delay Time td(on) 21 ID = 10 A Rise Time tr 110 VGS(on) = 10 V Turn-Off Delay Time td(off) 140 VDD = 50 V Fall Time tf 110 RG = 10 Ω Total Gate Charge QG 51 ID = 20 A Gate to Source Charge QGS 4.9 VDD = 80 V Gate to Drain Charge QGD 15 VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.1 IF = 20 A, V GS = 0 Reverse Recovery Time trr 170 IF = 20 A, V GS = 0 Reverse Recovery Charge Q rr 770 di/dt = 100 A/ µs Test Circuit 3 Gate Charge VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD Test Circuit 1 Avalanche Capability PG. RG = 10 Ω D.U.T. RL VDD Test Circuit 2 Switching Time RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS t = 1 s Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS ID 10 % 10 % 90 % 90 % 90 % 10 % VGS (on) ID ton toff td (on) tr td (off) tft µ UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

TYPICAL CHARACTERISTICS (T A = 25 ˚C) FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 0.1 100 10 100 1000 TC = 25 ˚C Single Pulse 0 4 6 8 51 0 1 5 100

1000 Pulsed

ID(pulse) 1 ms PW=10 s Power Dissipation Limited RDS(on) Limited (at V GS = 10 V) Pulsed VGS = 4 V VGS = 6 VVGS = 10 V DC 200 ms ID(DC) VDS = 10 V 100 s 10 ms TA = –25 ˚C 25 ˚C 125 ˚C µµ

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 0 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ 0.001 0.01 0.1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 10 100 VDS=10 V Pulsed 0.1 1 100 1000 10 100 120 20 30 Pulsed 10 100 Pulsed Single Pulse 120 0.5 VDS = 10 V ID = 1 mA 1.0 1.5 2.0 –50 0 50 100 150 160 Rth(ch-a) = 62.5 ˚C/W Rth(ch-c) = 3.57 ˚C/W TA =–25 ˚C 25 ˚C 75 ˚C 125 ˚C ID = 8.0 A VGS = 10 V 100 140 VGS = 4 V µµ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 1.0 0.1 –50 120 0 50 100 150 ID = 10 A 100 1000 1.0 Pulsed 100 1 000 10 000 10 100 1 000 VGS = 0 f = 1 MHz 100 1 000 1.0 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery time - ns di/dt = 50 A/ s VGS = 0 0.1 100 1 000 10 000 1.0 10 100 2.0 3.0 160 VDD = 50 V VGS =10 V RG =10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Qg - Gate Charge - nC VDS - Drain to Source Voltage - V 0 20 40 60 80 80 V DD = 80 V ID = 20 A VGS = 4 V VGS = 10 V 4 V VGS = 0 Crss Coss Ciss tr td(on) tf td(off) VGSVDS µ

SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD L - Inductive Load - H IAS - Single Avalanche Energy - mJ SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 1.0 100 100 1 m 10 m VDD = 50 V VGS = 20 V → 0 RG = 25 Ω 120 160 50 75 100 125 150 175 VDD = 50 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 20 A 100 140 EAS = 40 mJ IAS = 20 A 10 µµ

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11