2SK246 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FOR CONSTANT CURRENT, IMPEDANCE Unit in mm CONVERTER AND DC-AC HIGH INPUT
5.1 MAX
IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS | i © High Breakdown Voltage : Vgps=—50V — ( Zz @ High Input Impedance : Iggg=1nA (Max.) (V@g= —30V) ous || 5 vy S 000 127 4.27 MAXIMUM RATINGS (Ta = 25°C) Fy Zan CHARACTERISTIC SYMBOL —EH) i 1. source . DRAIN Storage Temperature Range —55~125 JEDEC TO-92 EIAS SC-43 TOSHIBA 2-5F1C Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ wan. | rye. [Max. |unrr] Gate Cut-off Current Igss__| Vag=-30V, Vps=0 | — | — [-10] na | Gate-Drain Breakdown Voltage VBR) GDS) VDS=0, Ia=- 100A |-»] - [=| v | Gate-Source Cut-off Voltage |VGs(OFF)| VpDS=10V, Ip=0.1uvA [-o7[ — |-60] v | Forward Transfer _ ny pe ee Vps=10V, Vas=0, f=1kHe 1s] -[- | ms Vps=10V, Vas=0, f=1mmz | — | 90 | — | or | Reverse Transfer VnG=10V, Tp=0, f=1MEs | = [25] - | | Note : Ipgg Classification Y:1.2~3.0mA, GR: 2.6~6.5mA, BL: 6~14mA 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of @ TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a. guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1997-04-10 1/3
STATIC CHARACTERISTICS Ip - Ves ‘ | | |. [|] cosmow source Cow SOURCE FA yee TL vesnov | [TTT P erry) Zo—y TT PEPE Aa Pie we Tt PEPE), § Li | ee COPeCoAT A = Y FS py Ea ied, 5 Y) cee LEE Eee, -4 -2 0 20 40 60 -3.0 25 -2.0 -15 -10 -05 0 VoRATE-SOURCE | DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE Ves W) Ip — Vps (LOW VOLTAGE RIGION) 5 lYts| - ID | | 1] [J como source 8 couox See e LIT TTT TTT. | nn iia panne ——— G3 yas a Pu PDA e | ZC & Dost POLL 2 | Berry | 3 a 5 | fee = 1 fa 7 eee SZ (TTT rT DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN CURRENT Ip (mA) Ciss — VDS 10 Crss — VGD 100] — a Sw EH commox source e Ke fae = 0 ee Vos=0 Zz eS a OO ee cn a - See 3 “SO ae § SS & On eA NE
8 Tt | TT TT ze itil TT TTA TU
2 ooh 3° $ “HSS g | common ounce FEF
5 CoO S Ip=0 se
ee 5 oa) t=1MHz Coo a | 2 Ta=25°C CO a og Coie 05 1 3 10 3050 -0.5 -1 -3 -10 -30 -50 DRAIN-SOURCE VOLTAGE Vpg (V) GATE-DRAIN VOLTAGE Vgp (V) 1997-04-10 2/3
lYts| - Ipss 20 Vas (OFF) — IDss m -
2 COMMON SOURCE te COMMON SOURCE
z Ipss : Vps=10V g Ipss : Vpg=10V —E Yas=0 ss a 5-10) Ves=0 0 Eee FI Wis] : Vps=20V00 ppp KS : Vps= a a Ves=0 | 2S Vas orr) : Yps=10V ppp} 23 rim = FEE ge tpoaea FE BS Ta=25°C De — BE -5) Ta=25C —— oS = [ert] | 35 | s | [eer ff ag _g | | [it | e l=TIitHi |) oF | | tee ff Fy 5 = Fae Ea E BT 3 10 30 y 3 10 30 DRAIN CURRENT Ipgg (mA) DRAIN CURRENT Ipgg (mA) Pp — Ta 400) - LIT TTI tty yy a z LN 2 og | KET = IN = 209 a LENE 4 \\ ef |] ALT TT TO Bag iN ett tPA IN Zz a LI TITINI [TT | a o 0 50 100 150 200 250 AMBIENT TEMPERATURE Ta (°C) 1997-04-10 3/3