K2414

2SK2414 NEC | Alldatasheet

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Technical content

© 1994 DATA SHEET MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES

• Low On-Resistance R DS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) R DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low C iss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applica- tions. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±10 A Drain Current (pulse)* ID(pulse) ±40 A Total Power Dissipation (Tc = 25 ˚C) P T1 20 W Total Power Dissipation (TA = 25 ˚C) P T2 1.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current IAS 10 A Single Avalanche Energy EAS 10 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω , VGS = 20 V → 0 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The information in this document is subject to change without notice. Document No. D13193EJ2V0DS00 (2nd edition) (Previous No. TC-2495) Date Published March 1998 N CP(K) Printed in Japan PACKAGE DIMENSIONS (in millimeter) MP-3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 0.6 ±0.10.6 ±0.1 1.3 MAX. 1.6 ±0.212 3 5.5 ±0.27.0 MIN. 13.7 MIN. 2.3 2.3 0.75 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 4.3 MAX. 1.3 MAX. 2.3 2.3 12 3 5.5 ±0.2 10.0 MAX. 1.5 +0.2 –0.1 1.5 +0.2 –0.1 0.9 MAX. 0.8 MAX. 0.8 0.5 0.8 12.0 MIN. 1.0 MIN. 1.5 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-3Z (SURFACE MOUNT TYPE) Drain Gate Source Body Diode Gate Protection Diode

2SK2414, 2SK2414-Z ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance R DS(on)1 52 70 V GS = 10 V, ID = 5.0 A Drain to Source On-Resistance R DS(on)2 68 95 V GS = 4 V, ID = 5.0 A Gate to Source Cutoff Voltage V GS(off) 1.0 1.6 2.0 V DS = 10 V, ID = 1 mA Forward Transfer Admittance | y fs | 7.0 12 V DS = 10 V, ID = 5.0 A Drain Leakage Current I DSS 10 V DS = 60 V, VGS = 0 Gate to Source Leakage Current I GSS ±10 V GS = ±20 V, VDS = 0 Input Capacitance C iss 860 V DS = 10 V Output Capacitance C oss 440 V GS = 0 Reverse Transfer Capacitance C rss 110 f = 1 MHz Turn-On Delay Time t d(on) 15 I D = 5.0 A Rise Time t r 90 V GS(on) = 10 V Turn-Off Delay Time t d(off) 75 V DD = 30 V Fall Time t f 35 R G = 10 Ω Total Gate Charge Q G 24 I D = 10 A Gate to Source Charge Q GS 2.6 V DD = 48 V Gate to Drain Charge Q GD 6.0 V GS = 10 V Body Diode Forward Voltage V F(S-D) 1.0 I F = 10 A, VGS = 0 Reverse Recovery Time t rr 85 I F = 10 A, VGS = 0 Reverse Recovery Charge Q rr 220 di/dt = 50 A/µs UNIT m Ω m Ω V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's. Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time R G = 25 Ω 50 Ω D.U.T. PG L VDD VGS = 20 V → 0 BV DSSIAS ID VDS Starting Tch R G D.U.T. PG. t R L VDD VGS t = 1 s Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form ID 10 % 10 % 90 % 90 % 10 % 90 % ID VGS (on) td (off)td (on) ton toff tftr Test Circuit 3 Gate Charge D.U.T. R L VDD 50Ω IG = 2 mA PG. VDD VGS R G = 10 Ω µ

2SK2414, 2SK2414-Z TYPICAL CHARACTERISTICS (T A = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 40 60 80 100 120 140 160 100 20 40 60 80 100 120 140 160 1 10 100 Pulsed 0 2 46 8 1 0 100 1000 V GS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V Tc - Case Temperature - °CTc - Case Temperature - °C PT - Total Power Dissipation - W dT - Percentage of Rated Power - % ID - Drain Current - A ID - Drain Current - AID - Drain Current - A TA = –25 °C 0 020 0.1 123 567 25 °C 125 °C Pulsed VDS = 10 V Power Dissipation Limited R DS (on) Limited (at V GS = 10 V) 10 ms ID (DC) 1 ms Tc = 25 °C Single Pulse 100 ms DC ID (pulse) 100 s PW = 10 s µ µ VGS = 10 V VGS = 4 V VGS = 6 V

2SK2414, 2SK2414-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1000 100 0.1 10 100 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 100 1 10 100 ID - Drain Current - A 120 100 01 0 2 0 V GS - Gate to Source Voltage - V 2.0 –50 1.5 1.0 0.5 0 50 100 150 Tch - Channel Temperature - °C VDS = 10 V ID = 1 mA ID - Drain Current - A 100 0 10 100 R DS (on) - Drain to Source On-State Resistance - mΩ |yfs| - Forward Transfer Admittance - S rth(t) - Transient Thermal Resistance - °C/W R DS (on) - Drain to Source On-State Resistance - mΩVGS (off) - Gate to Source Cutoff Voltage - V VDS = 10 V Pulsed 120 75 °C 125 °C Pulsed ID = 5 A

0.01 Single Pulse

–25 25 75 125 TA = –25 °C 25 °C R th (ch-a) = 125 °C/W R th (ch-c) = 6.25 °C/W ID = 5 A VGS = 10 V VGS = 4 V Pulsed µµ

2SK2414, 2SK2414-Z DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 0–50 VGS = 0 Tch - Channel Temperature - °C 100 0 50 150 100 VGS = 4 V VGS = 10 V VDS - Drain to Source Voltage - V 10 100 100 1000 10000 VSD - Source to Drain Voltage - V ID - Drain Current - A 1000 100 1.0 0.1 1.0 10 100 tf td (on) td (off) ID - Drain Current - A Q g - Gate Charge - nC 0.1 1.0 10 100 100 01 0 2 0 3 0 4 0 R DS (on) - Drain to Source On-State Resistance - mΩC iss, Coss, Crss - Capacitance - pFtrr - Reverse Recovery time - ns td (on), tr, td (off), tf - Switching Time - nsVDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V ISD - Diode Forward Current - A ID = 5 A VDD = 30 V VGS = 10 V R G = 10 Ω 2.01.0 0.1 VGS = 10 V –25 75 25 125 120 tr Pulsed ID = 10 A VDD = 48 V VDS VGS C rss C oss C iss VGS = 0 f = 1 MHz di/dt = 50 A/ s VGS = 0 µ

2SK2414, 2SK2414-Z SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 1.0 10 100 1 m 10 m L - Inductive Load - H 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C VDD = 30 V R G = 25 Ω VGS = 20 V → 0 IAS ≤ 10 A IAS - Single Avalanche Energy - mJ dt - Energy Derating Factor - % VDD = 30 V VGS = 20 V → 0 R G = 25 W IAS = 10 A EAS = 10 mJ µµ

2SK2414, 2SK2414-Z REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. C11745E Quality grade on NEC semiconductor devices. C11531E Semiconductor device mounting technology manual. C10535E IC package manual. C10943X Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. X10679E Power MOS FET features and application switching power supply. D12971E Application circuits using Power MOS FET. D12972E Safe operating area of Power MOS FET. D13085E The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

2SK2414, 2SK2414-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5