2SK2401 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL Unit in mm APPLICATIONS 10.3MAax. on [324 |} BELEN @ Low Drain-Source ON Resistance : RD§(QN)=0.130 (Typ.) Fi ; | ¢ High Forward Transfer Admittance : |Yfs|=17S (Typ.) Fy @ Low Leakage Current : Ipgg=100/A (Max.) (Vpg=200V) al © EnhancementMode —:_Vih=1.5~3.5V(Vpg=10V, Ip=1mA) ell 2 MAXIMUM RATINGS (Ta = 25°C) sa025 ps12025 = tt 2 CHARACTERISTIC | SYMBOL “sete Drain-Source Vollage Voss 200 |. care . @) Drain-Gate Voltage (Rgg=20k0) Vper | 2007 [Vv |? CRAIN (HEAT SINK) 3 Gate-Source Voltage Voss JEDEC — Drain Current Drain Power Dissipation (Te=25°C) | Pp _| 75 ~—«| ~W | [TOSHIBA _ 2-10S1B Single Pulse Avalanche Energy** | Eag | 166 | _mJ_| Avalanche Current TO-220SM Unit in mm Repetitive Avalanche Bneray® Channel Temperature sone Storage Temperature Range T55~150 Lt] oa THERMAL CHARACTERISTICS 4 a CHARACTERISTIC SYMBOL YY ie Thermal Resistance, Channel to Case 2.5440.25, 154025 ° Thermal Resistance, Channel to Ambient ol * Repetitive rating ; Pulse Width Limited by Max. 1 GATE. aan junction temperature. 2. DRAIN (HEAT SINK) 3 ** Vpp=50V, Starting Ty, =25°C, L=1.2mH 3. SOURCE RG=250, IAR=15A JEDEC _ This transistor is an electrostatic sensitive device. Please handle with caution. TOSHIBA 2-10S2B Weight : 1.5g 26100142 @ TOSHIBA jis continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction offal ug to their inherent electrical sensRvty and wulnerabiity to physica tress. isthe responnblty of the buyer, when utlzing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In. developing your designs, please ensure that TOSHIBA. products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHaracTenismc | syMBot | TEST CONDITION Gate Leakage Current Iess _|Vag=+16V, Vps=0V [| — | — | +10] ZA | Drain Cutolf Current | Ings | Vps=200V, Vgs=0V b= [= [00 a] Drain-Source Breakdown Gate Threshold Voltage | Van | Vpg=T0V, Ip=imA Lis — [ss] Drain-Source ON Resistance _| Rpg (ON) | VGS=10V, Ip=10A | — [| 013[ 018] Q | Forward Transfer Admittance lY¢sl Vps=10V, Ip=10A [| 10/ i7/ —]| s | Input Capacitance | — | 2000] — | Reverse Transfer Capacitance Vps=10V, Vag=0V, f=1MHz| — | 200] — | pF Output Capacitance [= [600 — | oul VGs oy Turn-on Time | ton 3 siiee] — | oo] — | Switching S Ti . Vpp=100V . VIN : tr, t¢<5ns, DD 'Turn-off Time toff Duty =1%, tw=10ys Total Gate Charge (Gate- Q 40 Source Plus Gate-Drain) i Vpp=100V, Vgg=10V, c Gate-Source Charge [Qe |Ip=15a [= p=] Gate-Drain (“Miller”) Charge | — | 15] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Continuous Drain Reverse i Se el eee Pulse Drain Reverse Curent | Ipgp |---| — | — | ® | A Diode Forward Voltage VpsF_|IpR=15A, Vgg=0V [ — | — [-20] Vv | Ipr=15A, Veg=0V | — [| 180 | — J as | Reverse Recovery Charge dipr/dt=100A / us [| — [113] — | zc | MARKING ra >» Lot Number K2401 TYPE . oH Month (Starting from Alphabet A) UNV Year (Last Number of the Christian Era) 1998-11-12 2/5
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& 1 _—— ee 25 50 5 100 125 150 os| * SINGLE NonRepetitve = FT S74 CHANNEL TEMPERATURE Te CC) i. Coy NF gg) _ PULSE Te=26°0 rip 4 Curves must be derated linearly || ||| | | with increase in temperature. | Bypss os Vs MAX. 1 3 10 30 100 300 15V f] ‘AR, DRAIN-SOURCE VOLTAGE Vpg (V) -15V Y N oth Vpp /% \\| vos TEST CIRCUIT WAVE FORM Peak IAR=15A, RG=250. 1 oy -.( —BYDSS_ Vpp=50V, L=1.2mH Eas=y LP “Bypss-Vbp? TT «*O“NB-T I-12 O55